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Titan g2 60 300 chemistem

Manufactured by Thermo Fisher Scientific

The Titan G2 60–300 ChemiSTEM is a high-performance electron microscope designed for advanced materials analysis. It features a 60-300 kV electron beam and a ChemiSTEM energy-dispersive X-ray spectrometry system for comprehensive elemental characterization.

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4 protocols using titan g2 60 300 chemistem

1

Microstructural Analysis of Zn-Li Alloy

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As-extruded Zn-0.8Li alloys were cut into 1 mm thickness disk followed by grounding and polishing with 0.25 µm diamond slurry. Polished samples were etched with 4% HNO3/alcohol solution for 5-10 s and pictured by a scanning electron microscopy (Hitachi S-4800, Japan). An X-ray diffractometer (XRD, Rigaku DMAX 2400, Japan) was used to examine the intermetallic phases with scanning range from 10° to 90° at a scan rate of 2° min−1 and step of 0.02°. Polished samples were further processed into 60 µm thickness, followed by punching into 3 mm diameter disks, and ion-beam milling using Gatan PIPS 691 with 10 KeV at −25 °C to −30 °C. Samples were plasma cleaned by Gatan SOLARUS 950 before visualized under a high-resolution high-angle annular dark-field mode (HAADF) at 300 kV using a scanning transmission electron microscopy (FEI Titan G2 60–300 ChemiSTEM).
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2

Atomic-resolution HAADF-STEM and EDS Characterization

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For HAADF-STEM the samples were polished the slices to 50-70 μm, punched to discs with 3 mm in diameter, and then ion-beam milled using Gatan PIPS 695 at approximately −70 °C. Atomic-resolution HAADF-STEM images and EDS maps were acquired from a FEI Titan G2 60–300 ChemiSTEM operating at 120 kV, equipped with a Cs probe corrector and a Super-X EDS with four windowless silicon-drift detectors. A convergence semi-angle of 15 mrad, collection semi-angle of 45–262 mrad and spot size 9 were used. The count rate is in the range of 180 to 500 cps when acquiring atomic-resolution EDS maps. HAADF-STEM image simulations were conducted using xHREM software. The atomic-resolution HAADF-STEM images were Fourier filtered using Gatan DigitalMicrograph. The atomic-resolution EDS maps were appropriately adjusted for brightness, contrast and gamma value in Esprit software, without any other manipulations.
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3

Comprehensive Microstructural Analysis of Corroded Alloy

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Thin specimens for TEM and HAADF-TEM observation were prepared by mechanical polishing from 500 μm to 60–80 μm, punching into 3 mm diameter discs, and ion-beam milling using Gatan 695. TEM was carried out on FEI Tecnai G2 F20. HAADF-STEM and EDS were performed on FEI Titan G2 60–300 ChemiSTEM. Microstructure and crystallographic orientations were analyzed by TKD-EBSD on SEM (JEOL JSM-7800) equipped with an HKL-EBSD system using a step size of 0.09 μm. The sample preparation process for TKD-EBSD mapping was similar to that for TEM. Electron channeling contrast image and EDS maps were recorded on Zeiss Auriga SEM-FIB. The surface suitable for electron channeling contrast imaging was sputter-cleaned with an argon gun Gatan 697. Because precipitates are invisible on the surface of corroded regions, samples were re-etched in an acetic picral solution (2 ml acetic acid + 1 g picric acid + 2 ml of H2O + 16 ml of ethanol) to show the second phase. In-situ corrosion process and corrosion morphology were observed under a stereo optical microscope (Keyence VHX 2000) to obtain 2D and 3D images. The chemical states of corrosion products were determined by XPS (ESCALAB250Xi, Thermo Fishes Scientific, USA) using Al Kα X-ray corresponding to 1486.71 eV photons.
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4

Atomic-scale HAADF-STEM Characterization

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All the specimens for HAADF-STEM observations were ion-milled using Gatan PIPS 695 at −70 °C. HAADF-STEM characterization was conducted on a Cs-corrected FEI Titan G2 60–300 ChemiSTEM operated at 300 kV and equipped with a Super-X energy dispersive X-ray spectrometer. A 15 mrad convergence semi-angle and an inner-collection semi-angle of 57 mrad were used for HAADF imaging. The thickness of STEM foils was determined by the comparison between experimental position averaged convergent beam electron diffraction patterns and simulated patterns40 (link), and its value was used for quantitative simulation of HAADF-STEM images. Image simulations were performed using xHREM software package based on FFT-multislice and wave-optics41 (link). Image simulation parameters of illumination conditions, such as convergent semi-angle, detector angle, defocus, and specimen thickness, were the same as experimental conditions. The atomic-scale HAADF-STEM images were processed by masking the corresponding diffraction patterns in the fast Fourier transforms of original images and then back transforming using Gatan Digital Micrograph.
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