The single-crystal X-ray diffraction for polymorphic crystals were collected with a Bruker D8 Venture equipped with a four-circle kappa diffractometer and Photon 100 detector. The crystal structures were phased by direct methods and refined by full matrix least-squares methods using the software package SHELX-2014-3 (Sheldrick, 2008). The cif files can be obtained free of charge from the Cambridge Crystallographic Data Center as CCDC ELLIPT (polymorph I), and CCDC 1817466 (polymorph II).
The CPOM detections of ellipticine films were using Nikon Ci-POL. Agilent Cary 60 UV-vis spectrometer was used to collect the solution-state and solid-state UV-visible absorptions. The film topology was characterized using an Asylum Research Cypher (Oxford Instruments). GGIXD measurements for thin films were carried out at beamline 8-ID-E (with beam energy of 10.91 keV) at the Argonne National Laboratory. For the measurements, the samples on Si substrate were detected with a 228-mm sample-to-detector distance under helium atmosphere. The diffraction patterns were collected with the film coating direction put parallel and perpendicular to the X-ray. The incidence angle was 0.14° and the exposure time was 5 s. Data analysis was performed using the software GIXSGUI.
The CPOM detections of ellipticine films were using Nikon Ci-POL. Agilent Cary 60 UV-vis spectrometer was used to collect the solution-state and solid-state UV-visible absorptions. The film topology was characterized using an Asylum Research Cypher (Oxford Instruments). GGIXD measurements for thin films were carried out at beamline 8-ID-E (with beam energy of 10.91 keV) at the Argonne National Laboratory. For the measurements, the samples on Si substrate were detected with a 228-mm sample-to-detector distance under helium atmosphere. The diffraction patterns were collected with the film coating direction put parallel and perpendicular to the X-ray. The incidence angle was 0.14° and the exposure time was 5 s. Data analysis was performed using the software GIXSGUI.