Mpf 3d

The morphology of films was probed by scanning electron microscopy (Supra45, Zeiss, Jena, Germany) (SEM), atomic force microscope (MPF-3D, Asylum Research, Santa Barbara, CA, USA) (AFM) and transmission electron microscopy (JEM-2100F, JEOL, Tokyo, Japan) (TEM). Raman spectra measurements were performed using a Raman spectrometer (JY LabRam-1B, HORIBA, Paris, France, λ_exc = 785 nm). The measurement of electrical conductivity and Seebeck coefficient along the in-plane direction were performed by a four-point probe method with ZEM-5 System (Advance-RIKO, Osaka, Japan). The thickness of the films was measured using a profilometer (Bruker, Hamburg, Germany).

UV-Vis-NIR spectrometer (Hitachi U4100), field emission SEM (FE-SEM, JEOL JSM6700F), TEM (FEI Titan 80-300, operated at 200 kV), XRD (Bruker D8 Advance), XPS (ESCALAB 250Xi) with Al Ka X-ray as the excitation source, EPR (JEOL FA200), tapping-mode AFM (MPF-3D, Asylum Research, CA, USA), and Raman spectroscopy (Horiba Jobin Yvon Modular Raman Spectrometer) with 514 nm laser excitation were employed to characterize different properties of the defective ZrS₃ NBs, e.g. atomic and energy band structure. In particular, the samples for the TEM measurements were suspended in ethanol and supported onto a holey carbon film on a Cu grid.