Interaction studied were carried out by previous ultracentrifugation of the samples at 15,000 rpm during 30 min of TH-NPs (Beckmann-Coulter ultracentrifuge). The possible interactions between TH and PLGA were assessed by differential scanning calorimetry (DSC). Thermograms were obtained on a DSC823e System (Mettler-Toledo, Barcelona, Spain). A pan with indium (purity ≥ 99.95%; Fluka, Switzerland) was used to check the calibration of the calorimetric system and an empty pan was used as a reference [25 (link)]. Samples were heated from 10 °C to 100 °C at 5 °C/min under a nitrogen atmosphere. Data were evaluated from the peak areas with Mettler STARe V 9.01 DB software (Mettler-Toledo). The physical state (amorphous or crystalline) of TH and TH-NP was analyzed by X-ray diffraction (XRD). Samples were sandwiched between 3.6 µm films of polyester and exposed to Cu K α radiation (λ = 1.5418 Å) with work power (45 kV, 40 mA). Diffractograms were recorded on a PANalytical X’Pert PRO MPD θ/θ, powder diffractometer of 240 mm of radius, using PIXcel detector (active length = 3.347°). The measure time was defined 200 s per step, 2θ/θ scans from 2 to 60°2θ with a step size of 0.026°2θ [49 (link)].
X pert pro mpd θ θ
Manufactured by Malvern Panalytical
The X'Pert PRO MPD θ/θ is a multipurpose X-ray diffractometer designed for powder and thin-film analysis. It features a θ/θ goniometer configuration, allowing for the measurement of a wide range of sample types and geometries.
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Lab products found in correlation
2 protocols using x pert pro mpd θ θ
1
Characterization of Thermosensitive Nanoparticles
2
Spectroscopic Analysis of Atomic Layer Deposited Al2O3
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Samples were characterized by spectroscopic ellipsometry (J.A. Woollam
Co, M2000V) and X-ray reflectivity (Panalytical X’Pert Pro
MPD θ-θ) in order to precisely estimate Al2O3 thickness and dielectric constant. We measured optical
indices and thickness on Al2O3 layers of increased
thickness (10 to 100 ALD cycles) deposited both on silver and silicon
and concluded that thickness indeed increased linearly with the number
of ALD cycles and estimated the Al2O3 layer
(Figure S8 ). The refractive index dispersion
was measured on a 10 nm thick Al2O3 deposited
on silicon.
Co, M2000V) and X-ray reflectivity (Panalytical X’Pert Pro
MPD θ-θ) in order to precisely estimate Al2O3 thickness and dielectric constant. We measured optical
indices and thickness on Al2O3 layers of increased
thickness (10 to 100 ALD cycles) deposited both on silver and silicon
and concluded that thickness indeed increased linearly with the number
of ALD cycles and estimated the Al2O3 layer
(
was measured on a 10 nm thick Al2O3 deposited
on silicon.
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