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Sluv 6

Manufactured by As One
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Sourced in Japan

The SLUV-6 is a multipurpose laboratory centrifuge designed for a variety of applications. It features a compact and durable construction, with a maximum speed of 6,000 rpm and a maximum relative centrifugal force (RCF) of 4,500 x g. The SLUV-6 can accommodate a range of sample sizes and tube configurations, making it a versatile tool for various laboratory processes.

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Lab products found in correlation

Jsm 6500f, by JEOL (2 mentions) Organic solvents, by Fujifilm (1 mentions) Drx 600 nmr spectrometer, by Bruker (1 mentions)

7 protocols using sluv 6

1

Electron Beam Lithography with ZEP520A Resist

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Example 31

ZEP520A (product of Zeon Corporation) was employed for a resist layer. The film thickness of the resist layer (ZEP520A) was measured using an AFM to be 50 nm. In an activating step, the resist layer was irradiated with an electron beam at an irradiation current of 30 pA and an acceleration voltage of 30 kV using a patterning device JSM-6500F (with a beam blanker, raster scanning), product of JEOL Ltd., as an activating device.

After the activating step was performed, a latent pattern image forming step was performed. In the latent pattern image forming step, whole-area UV irradiation was performed in the atmosphere for 15 minutes only with light having a wavelength that is not absorbed by the resist (365 nm) obtained through a filter and using a light source with 0.7 mW/h, a black light SLUV-6, product of AS ONE Corporation, as a latent pattern image forming section. A sample that was not subjected to the UV exposure was also prepared in the same manner.

In a developing step, the resist layer was developed at 13° C. for 60 seconds with a developing solution ZED-N50 (product of Zeon Corporation). FIGS. 54A and 54B show SEM images of resulting processed patterns.

US09977332B2. Resist patterning method, latent resist image forming device, resist patterning device, and resist material (2018-05-22). OSAKA UNIVERSITY [JP]. Inventors: Seiichi Tagawa [JP], Akihiro Oshima [JP].
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2

Electron Beam Patterning of ZEP520A Resist

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Example 32

ZEP520A (product of Zeon Corporation) was employed for a resist layer. The film thickness of the resist layer (ZEP520A) was measured using an AFM to be 50 nm. In an activating step, the resist layer was irradiated with an electron beam at an irradiation current of 100 pA and an acceleration voltage of 75 kV using a patterning device ELS-7700T (vector scanning) of ELIONIX INC. as an activating device.

After the activating step was performed, a latent pattern image forming step was performed. In the latent pattern image forming step, whole-area UV irradiation was performed in the atmosphere for 15 minutes only with light having a wavelength that is not absorbed by the resist (365 nm) obtained through a filter and using a light source with 0.7 mW/h, a black light SLUV-6, product of AS ONE Corporation, as a latent pattern image forming section. A sample that was not subjected to the UV exposure was also prepared in the same manner.

In a developing step, the resist layer was developed at 13° C. for 60 seconds with a developing solution ZED-N50 (product of Zeon Corporation). FIGS. 55A and 55B show SEM images of resulting processed patterns.

US10670967B2. Resist patterning method, latent resist image forming device, resist patterning device, and resist material (2020-06-02). OSAKA UNIVERSITY [JP]. Inventors: Seiichi Tagawa [JP], Akihiro Oshima [JP].
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3

Electron Beam Lithography with ZEP520A Resist

Check if the same lab product or an alternative is used in the 5 most similar protocols

Example 31

ZEP520A (product of Zeon Corporation) was employed for a resist layer. The film thickness of the resist layer (ZEP520A) was measured using an AFM to be 50 nm. In an activating step, the resist layer was irradiated with an electron beam at an irradiation current of 30 pA and an acceleration voltage of 30 kV using a patterning device JSM-6500F (with a beam blanker, raster scanning), product of JEOL Ltd., as an activating device.

After the activating step was performed, a latent pattern image forming step was performed. In the latent pattern image forming step, whole-area UV irradiation was performed in the atmosphere for 15 minutes only with light having a wavelength that is not absorbed by the resist (365 nm) obtained through a filter and using a light source with 0.7 mW/h, a black light SLUV-6, product of AS ONE Corporation, as a latent pattern image forming section. A sample that was not subjected to the UV exposure was also prepared in the same manner.

In a developing step, the resist layer was developed at 13° C. for 60 seconds with a developing solution ZED-N50 (product of Zeon Corporation). FIGS. 54A and 54B show SEM images of resulting processed patterns.

US10670967B2. Resist patterning method, latent resist image forming device, resist patterning device, and resist material (2020-06-02). OSAKA UNIVERSITY [JP]. Inventors: Seiichi Tagawa [JP], Akihiro Oshima [JP].
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4

Electron Beam Lithography Patterning Process

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Example 32

ZEP520A (product of Zeon Corporation) was employed for a resist layer. The film thickness of the resist layer (ZEP520A) was measured using an AFM to be 50 nm. In an activating step, the resist layer was irradiated with an electron beam at an irradiation current of 100 pA and an acceleration voltage of 75 kV using a patterning device ELS-7700T (vector scanning) of ELIONIX INC. as an activating device.

After the activating step was performed, a latent pattern image forming step was performed. In the latent pattern image forming step, whole-area UV irradiation was performed in the atmosphere for 15 minutes only with light having a wavelength that is not absorbed by the resist (365 nm) obtained through a filter and using a light source with 0.7 mW/h, a black light SLUV-6, product of AS ONE Corporation, as a latent pattern image forming section. A sample that was not subjected to the UV exposure was also prepared in the same manner.

In a developing step, the resist layer was developed at 13° C. for 60 seconds with a developing solution ZED-N50 (product of Zeon Corporation). FIGS. 55A and 55B show SEM images of resulting processed patterns.

US09977332B2. Resist patterning method, latent resist image forming device, resist patterning device, and resist material (2018-05-22). OSAKA UNIVERSITY [JP]. Inventors: Seiichi Tagawa [JP], Akihiro Oshima [JP].
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5

Fabrication of Titania Thin Films

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Titania
layers were formed on the film surfaces using the sol–gel spin-coating
technique.20 (link),44 (link) TNBT solutions were prepared
using toluene (10 and 100 mM). The PI and PVP/PI_hp samples were set
on a spin coater, and ethanol was spin-coated for cleaning. TNBT solutions
were then spin-coated on the surfaces (5000 rpm, 120 s) to form amorphous
titania layers. The samples were left for several hours to proceed
the hydrolysis and polycondensation of the alkoxide layers by air
moisture. The resulting samples having amorphous titania (a-TiO2) layers were denoted as a-TiO2/PI and a-TiO2/PVP/PI_hp. To increase the crystallinity of the titania layers,
the samples were hydrothermally treated45 (link),46 (link) (150 °C,
5 h) using PTFE-lined stainless-steel closed vessels (TAF-SR, Taiatsu
Techno Corp.). The treated samples were labeled as TiO2/PI and TiO2/PVP/PI_hp, respectively. In some cases, much
thicker titania layers were formed by repetitive spin coating (10
cycles) on the PVP/PI samples ((a-TiO2)10/PVP/PI_hp),
which were then hydrothermally treated to obtain (TiO2)10/PVP/PI_hp. For the evaluation of the titania layers of TiO2/PVP/PI_hp, UV light (254 nm, 9 W) was irradiated using a
handy UV lamp (SLUV-6, AS ONE Corp.) for 20 min. The hydrophilization
of the titania layers using this treatment was assessed.
Hashizume M, & Hirashima M. (2021). Preparation of Polymer-Immobilized Polyimide Films Using Hot Pressing and Titania Coatings. Langmuir, 37(14), 4403-4410.
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6

Analyzing Rhubarb Rhizome Compounds

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We detected the ingredients in the sugarcoated tablet supposedly containing rhubarb rhizome and the extract of authentic rhubarb rhizome with reference to the monograph on rhubarb rhizome in the Japanese Pharmacopoeia 16 [19 ] and compared them. We developed a plate with a mixture of 1-propanol, ethyl acetate, water, and acetic acid (40:40:30:1, v/v/v/v) to ≈ 40 mm. We observed spots under UV light at 254 nm (SLUV-6; 254/365 nm; As One, Osaka, Japan).
Yoshida N., Numano M., Nagasaka Y., Ueda K., Tsuboi H., Tanimoto T, & Kimura K. (2015). Study on health hazards through medicines purchased on the Internet: a cross-sectional investigation of the quality of anti-obesity medicines containing crude drugs as active ingredients. BMC Complementary and Alternative Medicine, 15, 430.
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7

Purification and Characterization of Organic Compounds

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Organic solvents and Silica gel (75–120 mesh) for open column chromatography (CC) were purchased from Wako Pure Chemical Industries (Osaka, Japan). Analytical NP-TLC (silica gel 60 GF254 plates, 20 × 20 cm × 0.2 mm thick) and RP-TLC (RP-C18 F254 plates, 5 × 7.5 cm × 0.2 mm thick), both obtained from Merck (Darmstadt, Germany). TLC plates were envisioned under UV light (SLUV-6, AS One, Osaka, Japan) at 254 and 365 nm and then heated at 105 °C for 5 min after being sprayed with 5% sulfuric acid in methanol. Preparative RP-TLC Silica gel 60 RP-18 F254S glass plates were obtained from Merck (Darmstadt, Germany) and Preparative NP-TLC Silica gel 70 FM TLC glass plates (Wako Industrial Company, Shimizu, Japan) were used for final purification of the compounds. One-dimensional and two-dimensional NMR experiments were carried out on a Bruker DRX 600 NMR spectrometer (Bruker Daltonics Inc., Billerica, MA, USA), using TMS as an internal standard at 600.00 MHz for 1H-NMR and 150.9 MHz for 13C-NMR. Chemical shifts (δ) were expressed in ppm, while the coupling constant (J) in Hz.
Ashour A., Elbermawi A., Amen Y., Allam A.E., Ikeda H., Nagata M., Kumagae K., Azuma T., Taguchi A., Takemoto T., Matsumoto M, & Shimizu K. (2022). Melanin Synthesis Inhibition Activity of Compounds Isolated from Bamboo Shoot Skin (Phyllostachys pubescens). Molecules, 28(1), 23.
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