Ceta 16 m pixel cmos camera

TEM micrographs are acquired with an FEI Co. Talos F200X transmission electron microscope with scanning capabilities operating at an accelerating voltage of 200 keV. Specimens for TEM are prepared from deposited films via in-situ focused ion beam lift-out methods^{44 (link)} using an FEI Co. Helios Nanolab 600i SEM/FIB DualBeam workstation. Specimens are ion milled at 2 keV and 77 pA to remove Ga ion beam damage and achieve a final thickness of approximately 80 nm. Structural characterization is conducted by acquiring selected area electron diffraction (SAED) patterns on an FEI Co. Ceta 16 M pixel CMOS camera at a camera length of 410 mm. Platinum from the FIB is used to calibrate the camera constant, allowing SAED reflections to be accurately measured and indexed. Chemical mapping is performed in the TEM using the Super-X energy-dispersive X-ray spectroscopy (EDS) system equipped with four windowless silicon drift detectors, allowing for high count rates and chemical sensitivity to 1 atomic percent.
All data needed to evaluate the conclusions in the paper are present in the paper and the Supplementary Materials. Additional data related to this paper may be requested from the authors.

To study the microstructure of the intermediate phases, we forced the hydrothermal reaction to stop at designated time points by stopping the reaction, opening the reactor and extracting the contents inside. The solution and precipitates in the capillary were dispersed in DI water and then sonicated for 2 min. To prepare the samples for TEM, drops of the dilute solution were transferred onto silicon-nitride TEM grids (SimPore Inc.). TEM analysis was conducted using an FEI Co. Talos F200X transmission electron microscope operating at an accelerating voltage of 200 keV. Structural characterization was performed by acquiring selected area electron diffraction patterns on an FEI Co. Ceta 16 M pixel CMOS camera at a camera length of 660 mm. A platinum standard was used to calibrate the camera constant, allowing SAED reflections to be accurately measured and indexed.