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C12132

Manufactured by Hamamatsu Photonics

The C12132 is a photodetector module developed by Hamamatsu Photonics. It is designed to convert light signals into electrical signals. The device features a photodiode and a built-in amplifier circuit. Its core function is to detect and measure light intensity.

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2 protocols using c12132

1

Comprehensive Optical Characterization of Materials

Check if the same lab product or an alternative is used in the 5 most similar protocols
For the measurement of steady-state absorbance, transmittance, and reflectance, an ultraviolet-visible-near infrared (UV-Vis-NIR) absorption spectrometer equipped with an integrated sphere was used (V-670, JASCO). The film thickness was determined by atomic force microscopy (AFM5100N, Hitach High-Tech). PL spectra in the Vis range were obtained using NTEGRA Spectra (NT-MDT Spectrum Instruments), and in the near-infrared (NIR) region, steady-state PL and time-resolved photoluminescence (TRPL) measurements were performed by C12132 (Hamamatsu) with a pulse repetition rate of 15 kHz and a temporal resolution of 1 ns. UPS spectra were collected on a R4000 spectrometer (VG scienta) by exciting samples with He 1α source (~21.2 eV). For the work function (WF) measurement, a bias of 10 V was applied.
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2

Comprehensive Characterization of Photovoltaic Devices

Check if the same lab product or an alternative is used in the 5 most similar protocols
Fourier-transform
infrared spectra (FTIR) were recorded using a PerkinElmer Spectrum
Two. Ultraviolet–visible (UV–vis) and fluorescence spectra
were recorded with a LAMBDA 35 and a Shimadzu (RF-6000 Plus) spectrophotometer,
respectively. Time-resolved photoluminescence (TRPL) spectra were
obtained using a Hamamatsu C12132 with a pulsed laser (frequency,
15 kHz) of 500 nm (excitation power, 1 mW). X-ray powder diffraction
(XRD) patterns were recorded on a Bruker D8 Advanced/X-ray diffractometer
with Cu Kα radiation at a generator voltage of 40 kV and a current
of 100 mA. Ultraviolet photoelectron spectroscopy (UPS) was conducted
using a Kratos X-ray photoelectron spectrometer, Axis Supra. Scanning
electron microscopy (SEM) images were recorded on a SEM Hitachi S-4800
microscope. Atomic force microscopy (AFM) investigation was performed
using Bruker Dimension Icon AFM in the “tapping” mode.
The current density–voltage (J–V) curves
of photovoltaic devices were measured on a Keithley 2400 source-measure
unit under 100 mW cm–2 AM 1.5G irradiation using
a xenon lamp solar simulator [Oriel 300 W solar simulator]. The external
quantum efficiency (EQE) of the solar cells was acquired on an Enlitech
QE-R3018 using calibrated Si diodes as reference. The electrochemical
impedance spectra were tested using the Zahner electrochemical workstation.
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