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Silicon cantilever

Manufactured by Bruker
Sourced in United States

The silicon cantilever is a key component used in various analytical instruments. It functions as a flexible, microscopic beam that can detect and measure small forces, displacements, or vibrations. The silicon cantilever is a fundamental part of the sensing mechanism in these instruments, enabling high-precision measurements and analysis.

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4 protocols using silicon cantilever

1

Polymer Nanoparticle Characterization by AFM and TEM

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10 μL of the diluted polymer samples (TP1–TP4) (c = 10−3, 10−1 and 1 mg mL−1) were drop-casted on silicon wafer followed by washing with the same solvent and dried overnight. AFM height images were recorded by tapping mode on a Bruker Multimode 8 scanning probe microscope with silicon cantilever (Bruker) and analysed using the software NanoScope Analysis 1.5. The size distributions of the nanoparticles were analyzed using image-J software, from the U.S. National Institutes of Health.
15 μL polymer solution at a varied concentration (10−3, 10−1 and 1 mg mL−1) were drop-casted on a 300 mesh carbon-coated copper grid. After ∼5 min, excess solution was blotted using Whatman filter paper. The extra solution was then wicked off from all edges of the grid carefully. Grids having samples were then dried in the desiccator under vacuum for 1 day. TEM images were recorded using JEOL JEM 2100 with a Tungsten filament at an accelerating voltage of 2000 kV.
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2

Microstructure Analysis of Thin Films

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Cross sections of the films were analyzed
using a scanning electron microscope (LEO-440) with a tungsten filament
for generating electrons. The films were fractured after immersion
in liquid nitrogen. All the samples were coated with gold. The thickness
of the films was obtained from scanning electron microscopy (SEM)
images using Image J. Surface roughness of the films was evaluated
by atomic force microscopy (AFM) using a MultiMode 8 atomic force
microscope from Bruker Corporation (USA). Imaging was carried out
via a silicon cantilever (Bruker) in a tapping mode. The processing
of the images was performed using NanoScope Analysis 1.5.
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3

Topographical Analysis of Graphene Films

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Room-temperature
AFM measurements for topographical analysis are performed with two
commercial equipment: (a) Nanoscope IIIa from Veeco (United States):
Dynamic operation mode is selected, and silicon cantilevers (Bruker)
with a nominal radius of curvature of 8 nm and nominal constant force
of 1–5 N/m are used. (b) Instrument and software from Nanotec
Electrónica S.L: Dynamic operation mode is employed, exciting
the tip at its resonance frequency (∼75 kHz) to acquire topographic
information of the samples. The structure of our graphene films is
addressed by Raman spectroscopy using a confocal Raman microscope
(S&I Monovista CRS+). Raman spectra have been obtained using a
532 nm excitation laser, a 100× objective lens (NA = 0.9), and
an incident laser power of 6 mW. The chemical nature of the hybrid
material is determined by XPS. XPS measurements are carried out under
UHV conditions using a PHOIBOS 100 1D delay line detector electron/ion
analyzer, monochromatic Al Kα anode (1486.6 eV), and pass energy
of 30 eV.
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4

Atomic Force Microscopy Measurements

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The AFM measurements were carried out operating in the dynamic mode using silicon cantilevers with a nominal radius of curvature of 8 nm and nominal force constant in the 1–5 N/m range (Bruker). The images were formed by 512 × 512 pixels. The hardest materials (sapphire and MoS2) were measured at the end of the experiments to preserve the tip status.
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