The AFM and KPFM images were obtained via the Bruker Icon AFM system. An AFM tip (SCM-PIT-V2, Bruker Nano Inc., USA) was selected to probe the topography and thickness of the samples under the peak-force working mode, while the AM-KPFM measurements were measured under the tapping mode via the same tip of SCM-PIT-V2 with a resonant frequency of 75 kHz, a tip radius of 25 nm, a Pt–Ir coated conductive tip, a tip-sample height of 100 nm, and the ac bias of 0.5 V on a grounded substrate. These tests were performed in an atmospheric environment.
Scm pit v2
Manufactured by Bruker
Sourced in United States
The SCM-PIT-V2 is a scanning capacitance microscope system produced by Bruker. It is designed for high-resolution imaging and electrical characterization of semiconductor materials and devices. The core function of the SCM-PIT-V2 is to provide accurate and non-destructive measurements of doping concentrations and carrier profiles within semiconductor samples.
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Lab products found in correlation
Dimension icon afm, by Bruker (4 mentions)
Icon afm, by Bruker (1 mentions)
Dimension icon, by Bruker (1 mentions)
Atomic force microscope system, by Bruker (1 mentions)
Ppms 6000, by Quantum Design (1 mentions)
Icon afm system, by Bruker (1 mentions)
X pert diffractometer, by Philips (1 mentions)
Multimode 8, by Bruker (1 mentions)
Innova, by Bruker (1 mentions)
S3204 08, by Hamamatsu Photonics (1 mentions)
Ls 100, by Konica Minolta (1 mentions)
Dimension icon microscope, by Bruker (1 mentions)
Hf2li, by Zurich Instruments (1 mentions)
12 protocols using scm pit v2
1
AFM and KPFM Characterization of Samples
2
Kelvin Probe Force Microscopy Characterization
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Topography and surface potential images were simultaneously collected with Pt/Ir coated silicon probes (Bruker SCM-PIT-V2, resonant frequency ≈75 kHz, k ≈ 3 N·m−1) at ambient conditions using a Bruker Icon AFM employed in amplitude modulation KPFM (AM-KPFM) mode. For work function (WF) referencing and electrical grounding purposes, a polycrystalline Au electrode was thermally evaporated with a shadow mask on the flakes, before and after the molecule adsorption. The reported surface potential values are referred to the average SP of the non-treated Au electrode (0.16 ± 0.10 eV) obtained from >30 samples. The calibration of the Au WF (4.85 ± 0.09 eV) was determined on the polycrystalline Au electrodes via macroscopic Kelvin Probe (KP) at ambient conditions (Ambient Kelvin Probe Package from KP Technology Ltd, 2-mm-diameter gold tip amplifier)60 . The calibration of the KP probe was performed against a freshly cleaved HOPG surface (4.475 eV). The SPM image processing has been done on WSxM software.
3
PDMS Surface Characterization Protocol
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For surface characterization of final PDMS structure, we performed scanning electron microscopy (SNE4500M; SEC Co., Ltd., Suwon, Korea) after the bare PDMS samples were coated with gold using a sputtering system (MCM-100; SEC Co., Ltd., Suwon, Korea). To measure the surface roughness of the final PDMS structure, atomic force microscopy (Dimension Icon; Bruker, Billerica, MA, USA) was conducted (Supplementary Figure S1 ). The AFM probe (SCM-PIT-V2; Bruker, Billerica, MA, USA) had a spring constant of 3.0 Nm−1. Data analysis was performed using Gwyddion AFM analysis software (Czech Metrology Institute, Brno, Czech Republic).
4
Piezoelectric Response Measurement Protocol
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A 2-N/m platinum-coated tip (SCM-PIT-V2 Bruker) was used on a Bruker atomic force microscope system (Billerica, MA). During PFM measurements, an AC signal ranging from 20 up to 10 V was applied at 750 kHz. This frequency was chosen to avoid resonance. The single-frequency PFM measurements are taken at a rate of 0.1 Hz, averaged over 10 measurements each, and taken with a 20-ms delay between voltage steps. The response was measured quasi-statically on a well-defined gold top electrode. The response did not change over multiple sweeps taken over multiple days. Further quasi-static measurements were taken on the bare surface of the material, which showed a similar PFM response. Static scans remove the possibility of changes in topography, leading to a false phase signal. The use of small-signal measurements reduces the amount of injected charge and the possibility of large electrostrictive contributions, while using large electrodes averages over a wide range of material so the contributions of surface defects are reduced. All PFM and electrical measurements were taken with no illumination to reduce contributions from photogenerated carriers. For large signal measurements, the domain reorientation by poling was duplicated in an external LCR measurement system.
5
Magnetic and Piezoelectric Characterization
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The magnetic properties were examined using a vibrating sample magnetometer (VSM) in a Physical Property Measurement System (PPMS 6000, Quantum Design). The piezoelectric properties were measured using a conductive Pt–Ir coated Si tip (model: SCM-PIT V2) with a Bruker Dimension Icon AFM.
6
Kelvin Probe Force Microscopy of WSe2
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Atomic force microscopy and KPFM were performed using an Asylum MFP-3d microscope equipped with a PtIr-coated Silicon probe (Bruker SCM-PIT-V2). Typical initial scan parameters were 16 μm2 scan size, 256 points per line and a scan rate of 1 Hz. Higher-resolution scans were performed with 1024 points per line and scan rate of 1 Hz. Contact potential difference between the sample and the KPFM tip can be calculated using the equation , where e is the electron charge. Samples for KPFM were prepared on p-doped Si wafers; p-Si was used as a reference. Work function of WSe2ϕWse2 was calculated with respect to the work function of p-doped Si ϕSi following the equation .
7
Comprehensive Characterization of LSTO Ceramic
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The density (ρ) of the LSTO ceramic was determined using
the Archimedes method. The crystal structure and lattice parameters
were characterized by X-ray diffraction (XRD) using a Philips X’Pert
diffractometer with the Cu Kα source (λCu Kα = 1.540598 Å). A continuous scan between 20 and 100° was
recorded using 0.0167° step size and a dwell time of 6 s per
step. X’Pert HighScore and TOPAS software were used for phase
identification and Rietveld refinement. The grain size was undertaken
on polished surfaces by scanning electron microscopy (SEM, TESCAN
MIRA3 SC FEG-SEM), and the linear intercept method was used to determine
the average grain size.25 (link) X-ray photoelectron
spectra (XPS) were collected with a Kratos Axis Ultra spectrometer
using monochromatic Al Kα radiation (Esource = 1486.69 eV). CasaXPS software was used for deconvolution
of the Ti 2p core level with a Shirley-type background. Atomic force
microscopy (AFM) and KPFM were performed using a JPK NanoWizard 4
XP NanoScience atomic microscope equipped with a Kelvin probe microscopy
module. The images were recorded using a Pt–Ir-coated silicon
probe (SCM-PIT-V2, Bruker).
the Archimedes method. The crystal structure and lattice parameters
were characterized by X-ray diffraction (XRD) using a Philips X’Pert
diffractometer with the Cu Kα source (λCu Kα = 1.540598 Å). A continuous scan between 20 and 100° was
recorded using 0.0167° step size and a dwell time of 6 s per
step. X’Pert HighScore and TOPAS software were used for phase
identification and Rietveld refinement. The grain size was undertaken
on polished surfaces by scanning electron microscopy (SEM, TESCAN
MIRA3 SC FEG-SEM), and the linear intercept method was used to determine
the average grain size.25 (link) X-ray photoelectron
spectra (XPS) were collected with a Kratos Axis Ultra spectrometer
using monochromatic Al Kα radiation (Esource = 1486.69 eV). CasaXPS software was used for deconvolution
of the Ti 2p core level with a Shirley-type background. Atomic force
microscopy (AFM) and KPFM were performed using a JPK NanoWizard 4
XP NanoScience atomic microscope equipped with a Kelvin probe microscopy
module. The images were recorded using a Pt–Ir-coated silicon
probe (SCM-PIT-V2, Bruker).
8
Topographical Characterization of WSe2 and Graphene/WSe2 Heterostructures
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The topographical images are measured by atomic force microscope (AFM, Bruker Multimode 8) with a tapping mode. We employed the n-doped Si tip coated with Platinum-Iridium (Bruker, SCM-PIT-V2, frequency 50–100 KHz, spring constant 1.5–6 N/m) to characterize WSe2 and graphene/WSe2 heterostructure samples. STM/STS measurements were performed in low-temperature (77 K for Fig. S5a, c , 4.2 K for Fig. S5b ) and ultrahigh-vacuum (~10−10 Torr) scanning probe microscopes [USM-1400 (77 K) and USM-1300 (4.2 K)] from UNISOKU. The tips were obtained by chemical etching from a Pt/Ir (80:20%) alloy wire. The differential conductance (dI/dV) measurements were taken by a standard lock-in technique with an ac bias modulation of 5 mV and 793 Hz signal added to the tunneling bias.
9
Ambient Surface Potential Mapping
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Maps of the surface potential were acquired on freshly-cleaved surfaces in ambient conditions by means of an Innova (Bruker, Billerica, MA, USA) AFM equipped with a surface potential imaging add-on, using standard platinum-iridium-covered silicon tips (Bruker SCM-PIT-V2). Pristine and intercalated samples were mounted simultaneously on the same metallic sample holder and fixed with electrically-conducting adhesive tape.
AFM topography maps were acquired in tapping mode during the forward scans, whereas Kelvin-probe force microscopy (KPFM) measurements were performed in lift mode during the backward scan by grounding the sample and biasing the KPFM tip. The m maps shown in the following were acquired using a scan rate of 0.3 Hz, a lift height of 50 nm and a tip AC bias voltage of 3 V. Gwyddion software [68 (link)] (Czech Metrology Institute, Brno, Czech Republic) was employed for image analysis.
AFM topography maps were acquired in tapping mode during the forward scans, whereas Kelvin-probe force microscopy (KPFM) measurements were performed in lift mode during the backward scan by grounding the sample and biasing the KPFM tip. The m maps shown in the following were acquired using a scan rate of 0.3 Hz, a lift height of 50 nm and a tip AC bias voltage of 3 V. Gwyddion software [68 (link)] (Czech Metrology Institute, Brno, Czech Republic) was employed for image analysis.
10
Vertical Nanoscaffold Organic Light-Emitting Diodes
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The EA/2-methoxyethanol [1:20 (v/v)] was spin-coated onto vertical nanoscaffold at 3000 rpm and dried for 10 min at 120°C. The emissive layer of SY or F8BT (dichlorobenzene; 10 mg/ml) was then spin-coated onto the vertical nanoscaffold modified with a thin EA layer and annealed at 170°C for 30 min in the glovebox. Last, PMMA (60 mg/ml) from n-butyl acetate was spin-coated on the emissive layer as the encapsulation layer and annealed at 90°C for 30 min in the glovebox. The area of the device amounted to 8.0 mm2. KPFM imaging was performed with a Bruker Dimension Icon AFM. SP images were collected with Pt/Ir-coated silicon probes (Bruker SCM-PIT-V2; resonant frequency ≈ 75 kHz, k ≈ 3 N m−1) at ambient conditions in the amplitude modulation mode. The J/L-V characteristics and efficiencies were measured using a Keithley 2636A Source Meter, and the irradiation intensity of the devices was measured by a photodiode (Hamamatsu S3204-08), which has been previously calibrated by a luminance meter (Konica Minolta, LS-100) (42 , 43 ).
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