Surface topology of scales was measured by AFM (AFM5100N, Hitachi High-Technologies Corporation, Tokyo, Japan) with conventional needle-type probe (apex curvature radius of 8 nm, FMR-20, NanoWorld, Neuchâtel, Switzerland). Surface friction forces were measured in two ways; i.e., to measure the friction forces of the scales, including the scale boundaries, a whole sacrificed firebrat was fixed on a silicon substrate using carbon adhesive tape to keep the measuring area horizontal (see Supplementary Figure S1 ). Subsequently, friction forces of the firebrat surface were directly measured by AFM with the conventional needle-type and colloidal probes with diameters of 5, 10, and 20 µm (CP-CONT-BSG-A, CP-CONT-BSG-B, and CP-CONT-BSG-C, sQube, Bickenbach, Germany. Information of cantilevers is shown in Supplementary Table S2a . The scanning area was 50 µm × 50 µm and the scan rate was 0.3 Hz. The scanning was performed from the scale base to the apex, from the scale apex to the base, and along lateral directions.
Afm5100n
Manufactured by Hitachi
Sourced in Japan
The AFM5100N is an Atomic Force Microscope (AFM) manufactured by Hitachi. It is designed for high-resolution imaging and characterization of surfaces at the nanoscale level. The core function of the AFM5100N is to provide detailed topographical information about a sample's surface by using a sharp, cantilever-mounted probe to scan the surface and measure its interactions with the sample.
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Lab products found in correlation
Jsm 7000f, by JEOL (1 mentions)
Mct 2150, by A&D Company (1 mentions)
Spectrum one, by PerkinElmer (1 mentions)
Vk 100, by Keyence (1 mentions)
Sx165, by Rayonix (1 mentions)
Uv 2450, by Shimadzu (1 mentions)
Hr800uv, by Horiba (1 mentions)
K alpha xps, by Thermo Fisher Scientific (1 mentions)
Sigma 300, by Zeiss (1 mentions)
Nano zs90, by Malvern Panalytical (1 mentions)
Jem 2100, by JEOL (1 mentions)
Sub cell system, by Bio-Rad (1 mentions)
Polyfast, by Struers (1 mentions)
Ve 7800, by Keyence (1 mentions)
13 protocols using afm5100n
1
Measuring Firebrat Scale Topography and Friction
2
Characterization of Thermistor Fabrication
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The cross-section image was obtained by a field-emission scanning electron microscope (FESEM, JSM-7000F, Jeol Ltd.), and the surface roughness was examined by atomic force microscopy (AFM, AFM5100N, Hitachi High Technologies Co. Ltd.). A customized measurement setup comprising a bath circulator (RW-025G), a source meter, glass vessel etc. was utilized for examining the performance of the thermistor (Fig. 2b ). The bath circulator was controlled by Lab Tracer (v 2.2), which regulated the temperature through the glass jacket, and the corresponding resistance of the proposed thermistor was simultaneously determined using the Keithley 2400 source meter along with a reference temperature sensor rod. An optical microscope (MM6C-DC310-2, Olympus Co., Japan) was used to measure the print quality of the R2R gravure-printed NFC antenna and interconnect patterns. The thickness of the printed antenna was measured by a surface profiler (NV-220, Nanosystem, Korea).
3
Urushi Film Characterization by FTIR, Microscopy, and Tensile Testing
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Urushi films were analyzed using FTIR (Spectrum One, PerkinElmer, Inc., USA) with attenuated total reflection (ATR-FTIR). Roughness of sample surfaces was evaluated using laser microscopy (VK-100, Keyence Corporation, Japan) according to the JIS B 0601:1994 [15] . The indentation test was conducted with scanning probe microscopy (SPM, AFM5100N, Hitachi High-Technologies Corp., Japan) in force curve mode to determine the indentation stiffness of the sample surface. Sample surface stiffness (modulus of the sample surface) is given by the slope ΔF, the reaction force that a cantilever receives by tapping on the sample surface/ΔD, displacement of a cantilever by bending, of the reaction curve [16] (link). The lower the ΔF/ΔD, the softer is the sample surface [17] (link). Ten trials were performed for each sample. Dumbbell samples according to the ISO 5893-2002 standard of each film were prepared for tensile tests [18] . The tensile test was conducted using a universal material testing machine (MCT-2150, A & D Company, Japan) with a crosshead speed of 50 mm/min. The average values ± standard deviations of the elastic modulus, tensile strength, and tensile strain were evaluated using five independent specimens.
4
Comprehensive Niosome Characterization
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To assess the overall characteristics of niosomes, including particle size, zeta potential, and poly-dispersity index (PDI), dynamic light scattering (DLS) analysis was conducted by Brookhaven Corp Instrument (Brookhaven Instruments; Holtsville; NY: United States). Likewise, Atomic force microscopy (AFM), Scanning electron microscopy (SEM), and Transmission electron microscopy TEM (AFM5100N, HITACHI) were conducted to assess the morphology of the gene and drug-loaded niosome. The resulting data and mean values were used for triplicate measurement.
5
Characterization of Organic Photovoltaic Cells
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The current density–voltage characteristics of the OPVs were obtained using the Keithley 2400 SourceMeter under AM 1.5 G irradiation (100 mW/cm2) in a 150 W Xenon lamp-based solar simulator (McScience, South Korea) at room temperature.
The external quantum efficiency (EQE) of the OPVs were monochromatically measured by the K3100 EQX IPCE measurement system (McScience, South Korea) using a 300 W Xenon lamp.
The UV–visible absorption spectra were obtained by UV-2450 (Shimadzu, Japan).
The surface topology and the thickness of the films were scanned through atomic force microscopy (AFM) (AFM5100N, Hitachi) in the tapping mode.
The grazing incidence X-ray diffraction (GIXRD) measurements were performed at the PLS-II 9 A U-SAXS beamline of the Pohang Accelerator Laboratory (Korea). The operating conditions were set at a wavelength of 1.12 Å and a sample-to-detector distance of 224 mm. The incidence angle (αi) herein was set at 0.130°. The 2D GIXRD patterns were recorded using a 2D CCD detector (SX-165, Rayonix) with an exposure time of 10–60 s. All the films for the GIXRD had a similar film thickness of ∼80 nm and were spin-coated on PEDOT/PSS-coated Si substrates.
The external quantum efficiency (EQE) of the OPVs were monochromatically measured by the K3100 EQX IPCE measurement system (McScience, South Korea) using a 300 W Xenon lamp.
The UV–visible absorption spectra were obtained by UV-2450 (Shimadzu, Japan).
The surface topology and the thickness of the films were scanned through atomic force microscopy (AFM) (AFM5100N, Hitachi) in the tapping mode.
The grazing incidence X-ray diffraction (GIXRD) measurements were performed at the PLS-II 9 A U-SAXS beamline of the Pohang Accelerator Laboratory (Korea). The operating conditions were set at a wavelength of 1.12 Å and a sample-to-detector distance of 224 mm. The incidence angle (αi) herein was set at 0.130°. The 2D GIXRD patterns were recorded using a 2D CCD detector (SX-165, Rayonix) with an exposure time of 10–60 s. All the films for the GIXRD had a similar film thickness of ∼80 nm and were spin-coated on PEDOT/PSS-coated Si substrates.
6
Structural Analysis and Electrical Characterization of Graphene Nanoribbons
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The structural analysis of the synthesized GNR was performed by atomic force microscope (AFM: HITACHI AFM5100N) observations with the dynamic force mode and Raman spectroscopy (Horiba HR800UV) with a laser excitation of 532 nm (typical spot diameter is 1 μm). The GNR-FET devices were fabricated by a conventional photolithographic process. The electrical transport measurements were carried out for the FET devices with just only single GNR channel. The carrier mobility were evaluated from the source-drain current (Isd) as a function of the gate voltage (Vg) in the FET using a standard formula62 (link)–64 (link), expressed by where Wch, Lch and Cg are the width of the GNR, the channel length and the gate capacitance, respectively. The gate capacitance is given by Cg = εiε0/d. The εi and ε0 are the relative permittivity of SiO2 and the permittivity of a vacuum, and d is the film thickness of the SiO2 (300 nm).
7
Structural and Electrical Characterization of PFOTES-Ti3C2Tx-CNF Films
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The crystal structure of PFOTES‐Ti3C2Tx‐CNF films was analyzed by XRD (MiniFlex600) using Cu Kα radiation (λ = 1.54 Å). The chemical structure was measured by attenuated total reflectance (ATR)‐FTIR (TENSOR II, Brook technology, Germany) with a test resolution of 0.4 cm−1 and a sample test wavelength range of 400–4000 cm−1. The chemical composition of PFOTES‐Ti3C2Tx‐CNF films was analyzed by K‐Alpha XPS (Thermo Fisher, Thermo Scientific NEXSA). The test voltage was 15 kV, and the current was 15 mA. The roughness of the samples was measured at room temperature using an AFM system (Hitachi, AFM5100N, Japan). Tensile stress–strain experiments and tensile self‐healing were examined using a universal electronic material testing machine (3367, Istron, USA). The sample was stretched over an area of 20 × 10 × 2 mm3. The output current, voltage, and transferred charge were measured at room temperature using an electrostatic meter (Keithley 6514, USA) and an acquisition card (NI‐USB6259, USA). All electrical performance measurements were performed at room temperature with a relative humidity of 45%RH.
8
Nanomaterial Characterization by AFM, Raman, and PL
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Atomic force microscopy (AFM) measurements were performed using a Hitachi AFM (5100N, Japan) in non-contact mode. Confocal Raman spectroscopy and PL spectroscopy were performed (XperRAM S series, Nanobase) with a wavelength of 532 nm for laser excitation. To avoid sample damage, we used an excitation laser power of less than 3 mW. All Raman peaks were calibrated using the Raman peak of Si located at 520 cm−1.
9
Characterization of CNC-PAMAM/pDNA Complexes
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The ability of various CNC-PAMAM to condense pDNA was assessed by agarose gel electrophoresis. The CNC-PAMAM/pDNA complexes at various N/P ratios were investigated. 1 μg of pDNA was used for each sample. Gel electrophoresis was performed in TAE running buffer (40 mM Tris-acetate, 1 mM EDTA) with a voltage of 110 V for 30 min using a Sub-Cell system (Bio-Rad Labs, Richmond, CA, USA), and pDNA bands were visualized and photographed using a UVP bioimaging system (BioDoc-It 220, UVP Inc., Upland, CA, USA). The particle size and zeta potential of the complexes were analyzed by dynamic light scattering (DLS) using a laser particle size and zeta potential analyzer (Malvern Nano-ZS90, Southborough, MA, USA). The sample was dispersed in deionized water to be tested.
The morphologies of the complexes were visualized by transmission electron microscopy (TEM, JEM-2100, Jeol, Japan), scanning electronic microscopy (SEM, ZEISS Sigma 300, Zeiss, Oberkochen, Germany), and atomic force microscopy (AFM, AFM5100N, Hitachi, Tokyo, Japan). TEM was operated at an acceleration voltage of 100 kV.
The morphologies of the complexes were visualized by transmission electron microscopy (TEM, JEM-2100, Jeol, Japan), scanning electronic microscopy (SEM, ZEISS Sigma 300, Zeiss, Oberkochen, Germany), and atomic force microscopy (AFM, AFM5100N, Hitachi, Tokyo, Japan). TEM was operated at an acceleration voltage of 100 kV.
10
Thin Film Morphological Analysis
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The height and phase images of the P1 and P2 thin films were obtained using a tapping‐mode AFM (AFM5100N, Hitachi, Ltd.). The root‐mean‐square values were determined using built‐in software.
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