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40 protocols using ppms 9t

1

Measuring Electrical Resistance in PPMS

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The longitudinal resistance Rxx and the transverse resistance Rxy were measured by a standard six-probe method in a Quantum Design physical properties measurement system (PPMS-9T). The electrical characteristics were measured using resistivity option with a current of 50 nA.
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2

Measurement of Electrical Resistance

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The longitudinal and transvers resistance Rxx and Rxy were measured by a standard six-point Hall bar geometry in a Quantum Design physical properties measurement system (PPMS-9T). The electrical characteristics were measured using resistivity option with a current of 10 μA.
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3

Synthesis and Characterization of Topological Insulators

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High-quality single crystals of Bi2Se3 and Sr0.1Bi2Se3 were grown using the horizontal Bridgman method. The stoichiometric raw materials (99.99% Sr, 99.99% Bi and 99.99% Se powders) of nominal composition were mixed well and sealed in an ampoule in vacuum. The ampoule was then placed in a tube furnace with a temperature gradient, heated up to 850 °C, stayed for 2 days, and cooled from 850 to 610 °C at 1 °C per hour for the melt to crystallise. The resistance and magnetization were measured in a physical property measurement system (PPMS-9T, Quantum Design). The PPMS was equipped with a sample rotator used to measure the angular dependence of the electrical properties.
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4

Comprehensive Nanostructure Characterization

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The aberration-corrected STEM and core-level EELS (JEOL JEM-ARM200F) were used to characterize the structure of the cross-sectional Ag/BTO/NSTO. PFM measurements were carried out with conductive SCM-PIT tips (Bruker Dimension Icon). A Keithley 4200A-SCS was used to apply customized pulse waveforms for STDP measurements. The carrier concentration of NSTO and the low temperature I–V measurements were carried out in a Physical Property Measurement System (PPMS-9T, Quantum Design).
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5

Electrical Characterization of MoS2 FETs

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2-probe electrical properties of the back-gate and top-gate MoS2 FETs, including the Figs. 3e, f, 4b, 5b, c, e, h, were carried out by a semiconductor analyzer (FS-Pro) in a shielded vacuum chamber (<0.1 Torr) at room temperature, whose noise level is ~1 × 10−13 A within the voltage range of ±2 V. The 4-probe transfer curves and gated 4-probe measurements (such as gated Rxx-T and Hall data), including Figs. 3b, d, 4c, were carried out in a Physical Properties Measurement Systems (PPMS-9T, Quantum Design) equipped with a homemade electrical measurement system, which is composed of 2 Keithley 2400, and 2 Keithley 2182 A nanovoltmeter and has a noise level of ~10−10 A within the voltage range of ± 2 V. The CV and Cf measurements were carried out on a FS336 LCR Meter.
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6

Synthesis and Characterization of Amino-Modified FMNPs

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Silica-coated FMNPs were synthesized and evaluated according to our previous reports16 (link),30 (link). Ethanol (95 mL) and 2 mL of 3-aminopropyltriethoxysilane (APS) were mixed and allowed to react at room temperature for 24 h. Amino-modified FMNPs were separated using permanent magnet, washed with deionized water three times, and stored for further use. The prepared amino-modified FMNPs were characterized by a transmission electron microscope (TEM). The fluorescent and magnetic properties of amino-modified FMNPs were also determined using the photoluminescence (PL) spectra (Perkin Elmer LS 55 Spectrofluorimeter, PerkinElmer, Waltham, MA, USA) and superconducting quantum interference device magnetometer (PPMS-9 T, Quantum Design, Beijing, China), respectively. The zeta-potential value of amino-modified FMNPs was measured with particle sizing systems (NICOMP 380ZLS, PSS, Port Richey, FL, USA).
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7

Hall Carrier Characterization at RT

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Hall carrier concentrations and mobilities
at rt were measured using a magnetic field of 2 T with a PPMS-9T (Quantum
Design Inc., USA). Values reported correspond to the average of five
consecutive measurements, from which an error of ca. 10% was estimated.
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8

Electrical Conductivity Measurements of nc-Ni and nc-Cu

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For electrical conductivities measurements, nc-Ni and nc-Ni composites (0.8 vol.% C) were measured by Physical Property Measurement System (PPMS) (PPMS-9T, Quantum Design) in the temperature range of 2–300 K, using a standard van der Pauw resistivity measurement method43 . The sample dimension is 8 mm × 8 mm × 1 mm (length × width × height). Due to the low electrical resistance of pure Cu and nc-Cu composite, the PPMS measurements yielded rather scattered data. The electrical conductivities of nc-Cu and nc-Cu composites were therefore obtained by eddy current measurements (SMP 10, Fischer) with an accuracy of ±0.5%. Ten positions were tested for each sample (sample dimension: 30 mm × 30 mm × 2 mm) in order to obtain the statistically meaningful average value. The electrical conductivity was expressed in terms of International Annealed Copper Standard (IACS). High-purity annealed copper was used for calibration purposes. All samples used for electrical conductivity measurements were polished down to a metallurgical grit of 4000 SiC paper.
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9

Comprehensive Material Characterization

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The temperature dependence of the resistivity was measured using a standard four probe technique with a Physical Property Measurement System (Quantum Design PPMS-9T). The low-temperature resistivity (down to 0.3 K) was measured in a 3He refrigerator. The specific heat measurements were performed in a PPMS-9T using the two-τ relaxation method. Magnetic susceptibility measurements were performed down to 2 K using superconducting quantum interference device (SQUID) magnetometer, Magnetic Property Measurement System (Quantum Design MPMS-5T). The resistivity under pressure was measured in a piston-cylinder-type pressure cell up to 2.4 GPa, the maximum pressure which could be applied. Daphne 7373 was used as the pressure transmitting medium.
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10

Synthesis and characterization of Cu3TeO6

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High-quality single crystals of Cu3TeO6 were grown using PbCl2 (4 N) as the flux, following the procedures in ref.59 (link). X-ray diffraction data were collected in an x-ray diffractometer (X′TRA, ARL) using the Cu-Kα edge with a wave length of 1.54 Å. Rietveld refinements on the data were run in the Fullprof. suite. A single-crystal x-ray diffractometer was used to confirm the orientation of the single crystals. Susceptibility and heat capacity were measured in the physical property measurement system (PPMS-9T) from Quantum Design.
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