The chemical composition of the PLA films with the coatings was analyzed with the XPS instrument model TFA-XPS from Physical Electronics (Munich, Germany). The spectrometer was equipped with a hemispherical electron analyzer and monochromatic X-ray source with Al Kα1,2 radiation and the photon energy of 1486.6 eV. The excitation area of the sample was 400 µm2. The emitted photoelectrons were measured at a take-off angle of 45°. During the XPS measurements, an electron gun was used for the surface neutralization of the surface charge. The survey spectra were measured at a pass energy of 187 eV and an energy step of 0.4 eV. The software MultiPak v8.1c (Physical Electronics, Munich, Germany) was used for the evaluation of the measured spectra. The same approach was used for analyzing the PLA films after the desorption experiment.
Tfa xps
Manufactured by Physical Electronics
Sourced in Germany, United States
The TFA XPS is a high-performance X-ray Photoelectron Spectroscopy (XPS) system designed for surface analysis. It provides detailed information about the chemical composition and electronic structure of solid surfaces and thin films.
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Lab products found in correlation
6 protocols using tfa xps
1
X-ray Photoelectron Spectroscopy Analysis of PLA Films
2
X-ray Photoelectron Spectroscopy of Surfaces
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The chemical composition of the surfaces was analyzed with X-ray photoelectron spectroscopy (XPS) using TFA XPS (Physical Electronics, Chanhassen, MN, USA). The samples were exposed to X-rays over a 400 μm spot size with a monochromatic Al Kα1,2 radiation at 1486.6 eV, under 6 × 10−8 Pa chamber pressure. The emitted photoelectrons were detected with a hemispherical analyzer placed at an angle of 45° in order to correlate to the normal plane of the samples. Survey-scan spectra were made with a 0.4 eV step resolution at 187.85 eV of pass energy. Surface neutralization was carried out by an electron gun, and MultiPak (Version 7.3.1) software (Physical Electronics, Chanhassen, MN, USA) was used to analyze elemental concentration.
3
Surface Characterization of Plasma-Treated Samples
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Approximately 20 min after plasma treatment, the surface composition of the samples was analysed by X-ray photoelectron spectroscopy (XPS). An XPS instrument model TFA XPS from Physical Electronics (Munich, Germany) was used. The samples were excited using monochromatic Al Kα1,2 radiation at 1486.6 eV. Photoelectrons were detected at an angle of 45° with respect to the normal of the sample surface. XPS survey spectra were measured at a pass-energy of 187 eV using an energy step of 0.4 eV. High-resolution C 1s spectra were measured at a pass-energy of 23.5 eV using an energy step of 0.1 eV. An additional electron gun was used for the surface charge compensation. All spectra were referenced to the main C 1s peak with a position set to 284.8 eV. The measured spectra were evaluated using MultiPak v8.1c software (Ulvac-Phi, Inc., Kanagawa, Japan, 2006) from Physical Electronics.
The surface wettability was measured 5 min after plasma treatment by a See System (Advex Instruments, Brno, Czech Republic). Contact angles (WCA) were determined with a demineralized water droplet of a volume of 3 μL. Three measurements were taken to minimize the statistical error.
The surface roughness and morphology were analysed by atomic force microscopy (AFM) using a Solver PRO (NT-MDT, Moscow, Russia) in tapping mode. The surface roughness, Ra, was measured over an area of 5 μm × 5 μm.
The surface wettability was measured 5 min after plasma treatment by a See System (Advex Instruments, Brno, Czech Republic). Contact angles (WCA) were determined with a demineralized water droplet of a volume of 3 μL. Three measurements were taken to minimize the statistical error.
The surface roughness and morphology were analysed by atomic force microscopy (AFM) using a Solver PRO (NT-MDT, Moscow, Russia) in tapping mode. The surface roughness, Ra, was measured over an area of 5 μm × 5 μm.
4
XPS Analysis of Plasma-Treated Samples
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Chemical composition of the samples was determined with an XPS instrument model TFA XPS (Physical Electronics, Ismaning, Germany) from Physical Electronics. Analyses were performed 15 min after the plasma treatment. Monochromatic Al Kα1,2 radiation at 1486.6 eV was used for sample excitation. Photoelectrons were detected at an angle of 45° with respect to the normal of the sample surface. XPS survey spectra were measured at a pass-energy of 187 eV using an energy step of 0.4 eV. High-resolution spectra of carbon C1s were measured at a pass-energy of 23.5 eV using an energy step of 0.1 eV. Because the samples are insulators, an electron gun was used for the additional charge compensation. The spectra were analyzed using MultiPak v8.1c software (Ulvac-Phi Inc., Kanagawa, Japan, 2006) from Physical Electronics.
5
Comparative XPS Analysis of Coated Polymer Foils
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The surface compositions of coated PE and PP foils were compared with the instrument TFA XPS (Physical Electronics, Chanhassen, MN, USA). The base pressure in the XPS analysis chamber was about 6 × 10−8 Pa. The coated foils were irradiated with X-rays over a 400 µm analysis area with monochromatic Al Kα1,2 radiation (1486.6 eV) at 200 W. The photoelectrons were detected using a hemispherical analyzer, positioned at an angle of 45° with respect to the sample surface. The energy resolution was about 0.6 eV. Spectra were recorded at three locations on each sample. The surface elemental concentrations were calculated from the survey-scan spectra using Multipak v8.1c software (Ulvac-Phi Inc., Kanagawa, Japan, 2006) from Physical Electronics.
6
XPS Characterization of Plasma-Treated Polystyrene
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Immediately after the APPJ treatment, the samples were transferred to the XPS chamber. XPS characterization of PS was performed using an XPS instrument (model TFA XPS from Physical Electronics, Münich, Germany). The samples were exposed to monochromatic Al Kα1,2 radiation at 1486.6 eV. The diameter of the measured area was 400 µm. Spectra were measured at an electron take-off angle of 45° in the center of the treated samples. Survey spectra were acquired at a pass-energy of 187 eV using an energy step of 0.4 eV, whereas high-resolution C1s spectra were measured at a pass-energy of 23.5 eV using an energy step of 0.1 eV. An additional electron gun was used for compensation of the surface charge. Spectra were calibrated by shifting the C–C peak to 284.8 eV. The measured spectra were analyzed using MultiPak v8.1c software (Ulvac-Phi Inc., Kanagawa, Japan, 2006) from Physical Electronics, which was supplied with the spectrometer. Linear background subtraction was used. The following peaks were identified in C1s spectra: C–C (284.8 eV), C–O (286.2 eV), C=O, O–C-O (287,4 eV), O–C=O (288.6 eV), as well as O–CO–O (289.7 eV) and aromatic shake-up peak π–π* (291.5 eV).
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