TEM was performed on (i) a Tecnai F20 (Thermo Fisher, Eindhoven, The Netherlands), operated at in monochromated conditions, and (ii) a Titan3 G2 60–300 (Thermo Fisher, The Netherlands), operated at . EDX spectra/mappings were acquired with a Super-X detector (Chemi-STEM) within the Titan system (ii). Analyses were done with the software suites VELOX (Thermo Fisher, Eindhoven, The Netherlands) and Digital Micrograph (GATAN, Pleasanton, CA, USA).
Titan3 g2 60 300
Manufactured by Thermo Fisher Scientific
Sourced in United States
The Titan3 G2 60-300 is a high-performance transmission electron microscope (TEM) designed for advanced materials characterization. It features a 300 kV acceleration voltage and a wide magnification range from 60x to 300,000x. The Titan3 G2 60-300 provides high-resolution imaging, diffraction, and analytical capabilities to support a variety of research and development applications.
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Lab products found in correlation
D8 advance, by Bruker (2 mentions)
Supra 60, by Zeiss (2 mentions)
Jsm 6700f, by JEOL (2 mentions)
Titan 80 300, by Thermo Fisher Scientific (2 mentions)
Digital micrograph, by Ametek (1 mentions)
Tecnai f20, by Thermo Fisher Scientific (1 mentions)
Velox, by Thermo Fisher Scientific (1 mentions)
Jsm 6500f, by JEOL (1 mentions)
Quantum energy filter, by Ametek (1 mentions)
Alpha 300, by WITec (1 mentions)
Multimode 5, by Veeco (1 mentions)
Nano230, by Thermo Fisher Scientific (1 mentions)
Helios nanolab 450, by Thermo Fisher Scientific (1 mentions)
S 4800, by Hitachi (1 mentions)
Su8220, by Hitachi (1 mentions)
Quantum 965, by Ametek (1 mentions)
Axs d8, by Bruker (1 mentions)
Dxr2 raman microscope, by Thermo Fisher Scientific (1 mentions)
Escalab 250xi system, by Thermo Fisher Scientific (1 mentions)
Invia reflex, by Renishaw (1 mentions)
22 protocols using titan3 g2 60 300
1
Transmission Electron Microscopy Protocol
2
High-Temperature EELS Characterization of HfTa4C5
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Cross-sectional scanning transmission electron microscopy (STEM) and EELS were performed using an aberration corrected ThermoFisher Titan3 G2 60–300 with a monochromator and an X-field emission gun source at a beam energy of 300 keV. The HfTa4C5 specimen used for experimental EELS data acquisition was prepared according to Supplementary Fig. 9 . Spectral resolutions of ≤0.2 eV were achieved for all EELS measurements as calculated by the full width at half maximum (FWHM) of the zero loss peak (ZLP). Low-loss EELS spectra were collected from HfTa4C5 as a function of temperature, ranging from room temperature (∼25 °C) to 1200 °C, where the specimen was heated at a uniform rate of 10 °C/s. EELS spectra were collected after stabilizing at each target temperature. A power-law decay function was fitted to the tail of the ZLP in front of the first absorption feature in order to filter out ZLP background signal and resolve the features of interest in the spectra. This was carried out using the Gatan DigitalMicrograph software suite.
3
Nanomorphological Analysis of Anodized Specimens
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The nanomorphologies of the surface and the fractured cross section of the anodized specimens were examined by field emission (FE)-SEM (JSM6500F, JEOL). A thin electroconductive platinum film was coated on the surface of the specimen before SEM observations were performed for insulating anodic oxide. The ultrathin sectioned specimens were examined by Cs-corrected STEM (Titan3 G2 60-300, FEI). The crystallinity of the AAO was investigated by electron diffraction analysis, and elemental analysis was conducted using EDS and EELS.
4
Temperature-Induced Nanostructure Dynamics
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A probe corrected FEI Titan3 G2 60-300 is used to record
high angle annular dark-field images of temperature-induced restructuring
processes. Elemental analysis was carried out with a four-quadrant
energy-dispersive X-ray spectroscopy detector and a Gatan Quantum
energy filter for electron energy loss spectroscopy.
high angle annular dark-field images of temperature-induced restructuring
processes. Elemental analysis was carried out with a four-quadrant
energy-dispersive X-ray spectroscopy detector and a Gatan Quantum
energy filter for electron energy loss spectroscopy.
5
Structural and Surface Properties of GVNB
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The crystalline structure of the as-prepared samples was characterized using XRD (Bruker D8 Advance with Cu Kα radiation, λ = 1.54178 Å). The morphologies of the samples were observed by FE-SEM (Nano230, FEI co.). XPS (Thermo Fisher, UK) measurements were performed with monochromatic Al Kα radiation as X-ray source for the investigation of the surface states. To gain further insight into the structure of the products, they were additionally investigated by Raman spectroscopy (Alpha 300S, WITec) using a He-Ne laser with 532 nm in wavelength. The thickness of a single GVNB on SiO2 substrate was measured using AFM (Multimode V, Veeco). BF-TEM, electron diffraction pattern, and EELS were performed with an image-side aberration-corrected TEM (Titan3 G2 60-300, FEI) which was operated at 80 kV. High-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) was carried out using a probe-side aberration-corrected TEM (JEOL 2100F, JEOL) operated at 200 kV.
6
Structural Analysis of Ni-doped BaTiO3 Ceramics
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The crystalline structure of Ni-substituted BaTiO3 ceramic samples was identified by an x-ray diffractometer with Cu Kα radiation at room temperature (45 , 54 ). Transmission electron microscopy samples of the Ni-substituted BaTiO3 were prepared by the Ga ion beam milling method using a dual-beam focused ion beam system (Helios NanoLab 450, Thermo Fisher Scientific) and additionally milled by a low-energy Ar-ion milling system (Fishione Model 1040 Nanomill) to reduce damage at the surface layers of the samples. An aberration-corrected STEM (FEI Titan3 G2 60-300) system was used to obtain ABF STEM images of the samples with the detector angle range of 12 to 24 mrad. The probe convergence semi-angle and the source size of the electron probe were 26 mrad and 0.9 Å, respectively.
7
Multi-Technique Material Characterization Protocol
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The morphological investigation was conducted using an SEM (Hitachi S-4800 or Su8220) equipped with high- and low-angle BSE detectors. Micro-Raman measurements were performed with a 532 nm laser (Thermo Scientific DXR2 Raman Microscope) configured for wavenumber precision of ≤0.066 cm−1. XRD patterns were captured using a Bruker AXS D8 instrument with a Cu Kα source. AFM images were recorded on a Bruker Dimension AFM operating in tapping mode. High-resolution STEM images, SAED patterns, EDS were obtained using an aberration-corrected FEI Titan3 G2 60-300 equipped at an acceleration voltage of 200 kV. Noises of high-resolution STEM images were subtracted by Wiener filter. EELS was performed using a Gatan Quantum 965 dual EELS system with an energy resolution of 1.0 eV under an acceleration voltage of 200 kV. Specimen for cross-section TEM analysis were prepared by focused ion beam (FEI Helios Nanolab 450HP). XPS and UPS measurements were performed using an ESCALAB 250XI system (ThermoFisher K-alpha) equipped with an Al X-ray source under UHV conditions. The calibration of the XPS was performed by the alignment of the C 1 s spectrum (whose binding energy is 284.5 eV).
8
Characterization of Vertically Aligned Few-Layer Graphene
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The morphology, structure, composition and crystallinity of VFLG were characterized by Scanning Electron Microscopy (SEM) (Supra 60, Zeiss, Oberkochen, Germany), HRTEM (Titan3 G2 60-300, FEI, Hillsboro, OR, USA), Raman Spectroscopy (In Via Reflex, Renishaw, Wotton-under-Edge, Gloucestershire, UK) with a 532 nm laser and a water contact angle (SDC280E, SINDIN, Dongguan, China), respectively. The conductivity and field emission characteristics of individual VFLG were measured using a nano-probe measurement method, in which a manipulator with tungsten nano-probes in SEM system was adopted.
9
Characterization of Fe3O4 Thin Films
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The epitaxial growth and crystal structure were confirmed by RHEED, XRD (Rigaku SmartLab (9 kW)), and TEM (FEI Titan3 G2 60-300). Cross-sectional samples for TEM were prepared by using conventional mechanical polishing and dimpling techniques42 (link). The magnetic properties of Fe3O4 were measured by vibrating sample magnetometer (VSM) and the electrical properties were measured by direct current (DC) measurements.
10
Characterization of Functionalized MoS2 via STEM-ADF
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STEM imaging was carried out in a FEI Titan3 G2 60/300 operated at 80 kV to reduce irradiation damage. A high-angle ADF (HAADF) detector was used to collect ADF signal. A Gaussian blur filter was applied using the ImageJ software to reduce the noise and enhance the visibility of the detailed structure, but raw images were used for acquiring the line profile of the ADF intensity. STEM-ADF image simulations were conducted using the QSTEM package. Simulation parameters such as acceleration voltage, spherical aberration (C3 and C5), convergence angle, and inner/outer angle for the HAADF detector were set according to experimental conditions. Note that before the TEM imaging, the CVD-grown MoS2 was first transferred to a TEM grid and then functionalized by 1 × 10−6 M HAuCl4 in ethanol solution.
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