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Rtp 300 rc

Manufactured by Rigaku
Sourced in Japan

The RTP 300 RC is a rapid thermal processing (RTP) system designed for semiconductor manufacturing. It provides precise control of temperature and atmosphere during the thermal processing of semiconductor wafers. The RTP 300 RC is capable of rapid heating and cooling to enable the fabrication of advanced semiconductor devices.

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4 protocols using rtp 300 rc

1

Comprehensive Particle Characterization

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The particle morphologies and sizes of the as-prepared Si particles and GR-encapsulated Si were characterized using a field emission scanning electron microscope (FE-SEM; FEI, Sirion), a transmission electron microscope (TEM; JEOL, JEM-ARM200F), and a particle size analyzer (PSA, Mastersizer 2000, Malvern). The size distribution of the as-recovered Si particles was also determined from SEM micrographs by counting over 200 particles. The elemental composition of the samples was measured by an inductively coupled plasma mass spectrometer (ICP/MS; PerkinElmer DRCII). The composition and crystallinity of the sludge powders were analyzed by X-ray diffractometry (XRD; Rigaku, RTP 300 RC).
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2

Characterization of Electrode Materials

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Transmission electron microscopy (TEM; JEOL, JEM-ARM200F) and field emission scanning electron microscopy (FE-SEM; FEI, Sirion) were used to investigate morphological properties of the electrode materials. The crystalline structures of the prepared materials were analyzed using X-ray diffraction (XRD; Rigaku, RTP 300 RC) with Cu Ka radiation source. Specific surface areas of KTO NP/PGC composites were analyzed by Brunauer–Emmett–Teller method (TriStar 3000, Micromeritics Instrument Corp., Communications Drive, Norcross, GA, USA) using an auto-nitrogen adsorption instrument.
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3

Characterization of Pt/Graphene Composite

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The morphologies and elemental composition of the as-prepared Pt/GR composite were observed with a transmission electron microscope (TEM; JEM-ARM200F, JEOL, Japan) and an energy dispersive X-ray spectroscopy (EDS; Quantax 400, Bruker, UK). The crystallinity of the Pt/GR composite was analyzed with X-ray diffractometry (XRD; RTP 300 RC, Rigaku, Japan). Raman spectra were obtained using a Raman spectrometer (Dimension-P1, Lambda Solution, Inc., USA) with an argon-ion continuous-wave laser (532 nm) as the excitation source. The specific surface area (SSA) of the samples was measured using a nitrogen adsorption analyzer (BET; Tristar 3000, Micromeritics, USA). As-prepared samples were first degassed in the sample degas system (VacPrep 061, Micromeritics, USA) at 200 °C for 4 h prior to the analysis. The SSA was calculated using the multipoint BET method on six points of the adsorption isotherm in the relative pressure (P/P0) range from 0.05 to 0.330 . The thermos gravimetric analysis (TGA) was conducted to measure the Pt contents in the composites at a temperature range from 25 to 800 °C with a heating rate of 5 °C min−1 under air (DTG-60H, Shimadzu, Japan).
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4

Characterization of Si-GR Composites

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The crystallinities of the as-prepared Si-GR composites were analyzed with X-ray diffractometry (XRD; RTP 300 RC, Rigaku, Japan). The morphologies of the as-prepared Si-GR composites were observed with a transmission electron microscope (TEM; JSM-6380LA, JEOL, Japan) and a field emission scanning electron microscopy (FE-SEM; Sirion, FEI, USA). The molecular species of the composite were measured at wavelengths ranging from 1000 to 2000 cm−1 with excitation of a 532 nm laser by Raman spectra (Lambda Ray, LSI Dimension P1, Korea). The specific surface area was characterized by analyzing the N2 adsorption-desorption isotherms (BET; Tristar 3000, Micromeritics, USA). The thermo gravimetric analysis was conducted to measure the Si content in the composites in a temperature range from 25 to 800 °C with a heating rate of 5 °C/min in air (TGA; DTG-60H, Shimadzu, Japan).
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