Tds 3014b

We examined the basic characteristics of SW generated by the SWCA system in degassed saline in vitro. The shadowgraph of SW was taken by a high-speed camera (SIM02, Specialized Imaging Ltd., Tring, UK). The pressure distribution of the SW was measured using a polyvinylidene fluoride (PVDF) needle hydrophone with a 0.5 mm sensitive diameter and a 35 ns rise time (Dr. Müller Instruments Inc., Oberursel, Germany). The signals were stored in the digital transient memory (TDS3014B, Tektronix Inc., Oregon, USA) at a sampling rate of 100 MHz.
We calculated the acoustic pulse integral intensity (PII) [20 (link)] at the focal site according to the pressure waveform and it was defined as follows:
$\text{PII}=\frac{1}{\rho c}\underset{t_1}{\overset{t_2}{{\displaystyle \int }}}{p}^2\left(\text{t}\right)\text{dt}\left(\text{J}/{\text{m}}^2\right)$
The variable t₁ was the time just before when the pulse began, t₂ represented just after when the pulse ended, ρc represented the characteristic acoustic impedance of water (1.5 × 10⁶ N・s/m3), and p(t) was the instantaneous acoustic pressure.

Rats were placed in a stereotaxic frame, and the plane between the bregma and lambda was adjusted to horizontal. An uninsulated tungsten wire placed in the cortex 2 mm anterior to bregma served as a reference electrode, and the stereotaxic frame was connected to the ground. A tungsten microelectrode (0.1–0.9 MΩ) for recording HPC local field potentials was placed in the right dorsal HPC in the stratum lacunosum-moleculare (3.7 mm posterior to the bregma, 2.0–2.2 mm lateral from the midline and 2.4–2.6 mm ventral to the dural surface) [94 ]. During experiments, AC amplifiers (P-511, Grass-Astromed, West Warwick, RI, USA) were used for recording HPC field potentials, with high-pass and low-pass filters set to 1 Hz and 0.3 kHz, respectively. The field activity was displayed using a digital storage oscilloscope (TDS 3014B; Tektronix, Beaverton, OR, USA). Signals were digitized by the Micro 1401 interface (Cambridge Electronic Design, Cambrige, UK) and saved onto a computer hard drive for subsequent off-line analysis (Spike 2.7 Cambridge Electronic Design, Cambridge, UK).

The APPJ device with a four-bore glass tube and plasma generation system employed in this study was described in our previous report [23 (link)] and is shown in Figure 1. The four-bore borosilicate glass tube has four equal holes with a diameter of 1.5 mm and a total outer diameter of 6.35 mm. Two ends of the four holes were sealed with epoxy resin. Stainless steel wires with a 1.2 mm diameter were inserted into the sealed holes. The overall length of the APPJ device was 25 cm and the width was 6.35 mm, which spatially separated the resulting plasma columns and the electrical feeder by a distance of 25 cm.
A schematic of the experimental setup employed in this study is shown in Figure 1. High-purity (HP) grade Ar gas with 99.999% purity was used as the carrier gas, and a sinusoidal voltage waveform was used to power the APPJ device. A voltage probe (P6015A, Tektronix Inc., Beaverton, OR, USA) and current probe (4100, Pearson Electronics Inc., Palo Alto, CA, USA) were used along with a fiber-optic spectrometer (USB-2000+, Ocean Optics Inc., Dunedin, FL, USA) to measure the electrical and optical characteristics of the plasma plumes. The instantaneous waveforms of voltage, current and optical emission were displayed in real time on an oscilloscope (TDS3014B, Tektronix Inc., Beaverton, OR, USA).

Electrical characteristics and the PSC in response to applied electrical pulses and finger touch stimuli were measured using a semiconductor parameter analyzer (Keysight, B1500). Touch stimuli force was measured using a hand force gauge (Algol instrument, HF-10), and the output voltage of triboelectrification with finger and PI was measured with an oscilloscope (Tektronix, TDS 3014B). Dynamic and static flexibility tests of devices were carried out using a custom-built bending system. Dispersion of loaded BT NPs in the ferroelectric nanocomposite and the thickness of nanocomposite were examined by field-emission scanning electron microscopy (FE-SEM, JEO JSM-6500F). Capacitance measurement with MIM device was conducted using a semiconductor parameter analyzer (Agilent B1500).