The sapphire substrate
with as-grown material
was spin-coated with PMMA and baked at 85 °C for 10 min.
The MoS
2/PMMA film was detached from the sapphire substrate
by submerging it in water. Water surface tension promotes the separation
of the grown material from the substrate. Next, the film floating
in water is collected using a TEM grid and heated for 15 min at 85
°C. After the transfer is completed, the TEM grid is left in
acetone overnight and annealed at 250 °C.
For aberration-corrected
scanning transmission electron microscopy (STEM) imaging, an FEI Titan
Themis microscope equipped with double Cs corrector, monochromator,
and Schottky X-field emission gun was operated at an acceleration
voltage of 80 kV. The electron probe current was in the 17–20
pA range. The semiconvergence angle of the probe was 21.2 mrad. High-angle
annular dark field detector (HAADF) was used to capture the images
using short dwell times (8 μs) with 512 × 512 pixels. The
camera length was set to 185 mm which corresponds to the 49–200
mrad collection angle range. Focused ion beam (FIB, Zeiss
Nvision40)
was used to prepare the cross-section lamella from the device. For
the low-resolution cross-sectional TEM imaging, a FEI Talos F200 S
G2 microscope was used at 80 kV acceleration voltage.
Migliato Marega G., Wang Z., Paliy M., Giusi G., Strangio S., Castiglione F., Callegari C., Tripathi M., Radenovic A., Iannaccone G, & Kis A. (2022). Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2. ACS Nano, 16(3), 3684-3694.