To check the stacking order for slow-cooled and quenched crystals, we carried out TEM measurements to probe and compare the cross-sections. The quenched crystal was from the same piece of re-quenched crystal post-ARPES measurement (Fig.
3). The crystal was prepared from a slow-cooled crystal that we annealed and quenched post-growth. HAADF-STEM imaging was acquired on an aberration-corrected TEM (FEI,
TITAN) at 300 kV. A 25 mrad convergence angle and a 40 mrad inner collection angle is used. The contrast of HAADF images is proportional to
Zγ, where
Z is the atomic number and 1.3 <
γ < 2. Cross-sectional TEM samples were cut on a dual-beam FIB/SEM (FEI
Helios 660), with an ending voltage at 2 keV of the ion beam for final thinning. The image was taken along [100] direction on a slow-cooled sample which was reported to have more stacking fault comparing those quenched sample
47 (link),48 (link). The details can be found in Supplementary Note
1.
Wu H., Chen L., Malinowski P., Jang B.G., Deng Q., Scott K., Huang J., Ruff J.P., He Y., Chen X., Hu C., Yue Z., Oh J.S., Teng X., Guo Y., Klemm M., Shi C., Shi Y., Setty C., Werner T., Hashimoto M., Lu D., Yilmaz T., Vescovo E., Mo S.K., Fedorov A., Denlinger J.D., Xie Y., Gao B., Kono J., Dai P., Han Y., Xu X., Birgeneau R.J., Zhu J.X., da Silva Neto E.H., Wu L., Chu J.H., Si Q, & Yi M. (2024). Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet. Nature Communications, 15, 2739.