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Invia reflex micro raman spectrometer

Manufactured by Renishaw
Sourced in United Kingdom

The InVia Reflex micro-Raman spectrometer is a high-performance Raman imaging and analysis system. It provides precise chemical and structural information about materials and samples at the micro-scale. The system uses a laser to excite the sample and measures the resulting Raman scattered light, which is unique to the molecular structure of the material. This allows for non-destructive, high-resolution analysis of a wide range of samples.

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3 protocols using invia reflex micro raman spectrometer

1

Comprehensive Nanostructure Characterization

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All the nanostructures’ characterization was performed with the synthesis product in powder form. In order to study the morphology and elemental composition of the nanostructures, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) inside an AURIGA CrossBeam workstation were performed (Zeiss, Oberkochen, Germany). The structural characterization was carried out by X-Ray diffraction (XRD) using X’Pert PRO MRD diffractometer (PANalytical, Royston, UK) with Cu Kα radiation and the data acquisition range was 10–90° (2θ) with a step size of 0.033°. Fourier-transform infrared (FTIR) spectra were acquired in the range of 4000–525 cm−1 with 4 cm−1 resolution and 45° incident angle. The data was recorded using a Smart iTR attenuated total reflectance (ATR) sampling accessory (Thermo Scientific, Waltham, MA, USA) equipped with a single bounce diamond crystal on a Thermo Nicolet 6700 Spectrometer (Thermo Scientific, Waltham, MA, USA). Raman spectra were acquired using an inVia Reflex micro-Raman spectrometer (Renishaw, Wotton-under-Edge, UK) equipped with an air-cooled CCD detector and a HeNe laser using a 532 nm laser excitation with a power of 50 mW, with 0.3 cm−1 resolution. All measurements were obtained with an intensity of 50 µW at room temperature in a range of 100–1600 nm, using an integration time of 2 scans (10 s each).
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2

Raman Characterization of Few-Layer BP

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To characterize the exfoliated few-layer BP nanosheets, Raman spectroscopy was performed using Renishaw inVia Reflex micro-Raman spectrometer. The samples were prepared by using silicon wafer as a substrate. The diode-pumped solid-state laser with 532 nm excitation wavelength operated at 1.0 mW was focused on bulk BP crystal and exfoliated BP nanosheets by using a 50× objective lens.
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3

Raman Spectroscopy of Material Samples

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Sample Raman spectra were obtained using a Renishaw (England) inVia Reflex micro-Raman spectrometer with 785 nm excitation, a scanning range of 4000-100 cm -1 and resolution of 1 cm -1 . Three spectral accumulations were necessary, each of ~10 s exposure, to achieve spectra of the desired quality with a nominal laser power of 250 mW. Fluorescence backgrounds were subtracted from the spectra, which were again normalized to improve comparison of intensities.
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