The surface characteristics of the BiVO
4-
n electrodes were investigated by field-emission scanning electron microscopy (FESEM, Zeiss
Merlin, Germany). Surface roughness analysis was carried out by atomic force microscopy (AFM, Agilent 5400SPM, Agilent Technologies, USA), at scan areas of 2.0 × 2.0 μm and 5.0 × 5.0 μm for all samples. Powdered X-ray diffraction (XRD, Bruker
D8 Advance diffractometer, USA, using Cu Kα radiation,
λ = 1.5418 Å) was used to characterize the crystallinity of the samples. All samples were analyzed by XRD in the range of 15–70° at a scan rate of 0.5° min
−1; the crystal sizes of the BiVO
4-
n were estimated with the Scherrer formula.
32 (link) The diffuse reflectance UV-Vis absorption spectra of the samples were recorded with a spectrophotometer (
UV 2550, Shimadzu, Japan), with fine BaSO
4 powder as a reference. In thermal gravimetric analysis (TGA, NETZSCH, Germany),100 μL precursor was vacuum-dried for 5 h prior to the measurements. X-ray photoelectron spectroscopy (XPS) results were collected by an
Axis Ultra instrument (Kratos Analytical) under ultrahigh vacuum (<10
−8 torr) and by using a monochromatic Al Kα X-ray source. The adventitious carbon 1s peak was calibrated at 285 eV and used as an internal standard to compensate for any charging effects.
Shi L., Zhuo S., Abulikemu M., Mettela G., Palaniselvam T., Rasul S., Tang B., Yan B., Saleh N.B, & Wang P. (2018). Annealing temperature effects on photoelectrochemical performance of bismuth vanadate thin film photoelectrodes. RSC Advances, 8(51), 29179-29188.