As-synthesized products were characterized by means of a D/max-2550 PC X-ray diffractometer (XRD; Rigaku, Cu-Kα radiation), a scanning electron microscopy (SEM; S-4800), and a transmission electron microscopy (TEM; JEM-2100 F) equipped with an energy-dispersive X-ray spectrometer (EDX).
Jem 2100f
Manufactured by Rigaku
Sourced in Japan
The JEM-2100F is a high-resolution transmission electron microscope (TEM) developed by Rigaku. It is designed to provide advanced imaging and analytical capabilities for a variety of materials science applications. The JEM-2100F features a field emission gun (FEG) electron source and a stable, high-resolution electron optical system, enabling the imaging of specimens at high magnifications with exceptional clarity and resolution.
Automatically generated - may contain errors
Lab products found in correlation
D max 2550 pc x ray diffractometer xrd, by Rigaku (3 mentions)
S4800, by Rigaku (2 mentions)
Axis ultra, by Shimadzu (1 mentions)
Arm200f, by JEOL (1 mentions)
Dimension icon, by Bruker (1 mentions)
Smartlab, by Rigaku (1 mentions)
Raman spectrometer, by Renishaw (1 mentions)
Nova nanosem 230, by Thermo Fisher Scientific (1 mentions)
Ultima 4, by Rigaku (1 mentions)
V 670, by Jasco (1 mentions)
Nova nanosem 450, by Thermo Fisher Scientific (1 mentions)
Nexsa, by Thermo Fisher Scientific (1 mentions)
Cary 5000, by Agilent Technologies (1 mentions)
D max 2200, by Rigaku (1 mentions)
Asap 2020, by Micromeritics (1 mentions)
9 protocols using jem 2100f
1
Comprehensive Material Characterization
2
Porous Se@SiO2 Nanocomposite Synthesis
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Porous Se@SiO2 nanocomposites were prepared according to the previous method36 (link) and provided by Shanghai University of Engineering Science (Shanghai, China). The surface characteristics of the prepared material were examined using D/max-2550 PC X-ray diffractometry (XRD; Rigaku, Cu-Kα radiation) and transmission electron microscopy (TEM; JEM-2100F). The cumulative release kinetics of Se elements in the porous Se@SiO2 and nanospheres were detected in PBS (0.01 M, pH 7.4). They were then dissolved in deionized water for subsequent experiments.
3
Comprehensive Characterization of Graphene
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Raman spectroscopic
characterizations for graphene growth and quality confirmation were
made by using a Raman spectrometer (InVia, Renishaw) equipped with
a 514 nm laser. Atomic force microscopy (AFM, Bruker Dimension Icon)
with PeakForce tapping mode was used for surface morphology characterization.
XPS (Kratos Axis Ultra) with a monochromated Al Kα X-ray source and a hemispherical energy analyzer under a pass energy
of 10 eV was used for the high-resolution scan, whereas a pass energy
of 80 eV was used for X-ray induced Auger spectroscopy (XAES) of the
C KLL Auger region. In addition, the XPS signal was used for estimating
the graphene thickness, as elaborated in a later section. The instrument
work function was calibrated with respect to the Ag 3d5/2 signal. Cross-sectional ADF-STEM and TEM plane view images were
acquired by aberration-corrected JEOL ARM-200F operated at 200 kV.
Selected-area diffraction was performed using JEOL JEM2100F at 200
kV. XRD (Rigaku Smartlab) was performed using Cu Kα radiation and a Ge (220) double-bounce monochromator for Kα2 elimination.
characterizations for graphene growth and quality confirmation were
made by using a Raman spectrometer (InVia, Renishaw) equipped with
a 514 nm laser. Atomic force microscopy (AFM, Bruker Dimension Icon)
with PeakForce tapping mode was used for surface morphology characterization.
XPS (Kratos Axis Ultra) with a monochromated Al Kα X-ray source and a hemispherical energy analyzer under a pass energy
of 10 eV was used for the high-resolution scan, whereas a pass energy
of 80 eV was used for X-ray induced Auger spectroscopy (XAES) of the
C KLL Auger region. In addition, the XPS signal was used for estimating
the graphene thickness, as elaborated in a later section. The instrument
work function was calibrated with respect to the Ag 3d5/2 signal. Cross-sectional ADF-STEM and TEM plane view images were
acquired by aberration-corrected JEOL ARM-200F operated at 200 kV.
Selected-area diffraction was performed using JEOL JEM2100F at 200
kV. XRD (Rigaku Smartlab) was performed using Cu Kα radiation and a Ge (220) double-bounce monochromator for Kα2 elimination.
4
Porous Se@SiO2 Nanocomposite Synthesis
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Porous Se@SiO2 nanocomposites were prepared according to our previous method35 (link), and characterized by means of a D/max-2550 PC X-ray diffractometer (XRD; Rigaku, Cu-Kα radiation), a transmission electron microscopy (TEM; JEM-2100F). Besides the control release of Se were repeated at PH 7.4. As-synthesized porous Se@SiO2 nanocomposites were dispersed in deionized water for further use.
5
Characterization of Copper Nanoparticles
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The microstructural characteristics of copper nanoparticles were examined by transmission electron microscope (TEM, JEOL, JEM-2100F, Tokyo, JAPAN), X-ray diffraction (XRD, Rigaku, Ultima IV, Spring, TX, USA), Differential Thermal Analysis Thermoanalyzer(TG-DTA, Rigaku Thermo plus2 system TG8120, Spring, TX, USA) and ultraviolet–visible spectroscopy (JASCO, V670, Tokyo, Japan). The morphology and cross section of sintered films were analyzed by scanning electron microscope (SEM, FEI, Nova NanoSEM 230, Columbus, OH, USA). The sheet resistance (R) of copper films was measured by a four-point probe (Keithlink, TG-2, Taipei, Taiwan). Copper thin film samples (~1 cm2) were placed on a flat surface and gently touched with the probe. At least 5 sample points were sampled to collect the sheet resistance data.
6
Comprehensive Characterization of Material
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The crystal phase of the sample was analyzed using a X-ray diffractometer (XRD) (Rigaku, DMAX 2200, Tokyo, Japan) equipped with a Cu target (U = 40 kV, I = 40 mA). The scanning range was set from 5° to 80° with a scanning speed of 5° per minute. The morphologies and microstructure of the material were studied through scanning electron microscopy (SEM) (FEI, NOVA NANOSEM 450, Pittsburgh, PA, USA), transmission electron microscopy (TEM) (Thermo Fisher Scientific, TALOS L120C, Altrincham, UK), and high-resolution transmission electron microscopy (HRTEM) (Rigaku, JEM-2100F, Tokyo, Japan). The Brunauer–Emmett–Teller (BET) results were obtained using a fully automatic specific surface area and porosity analyzer at 77.350 K. The chemical states of surface elements were analyzed via X-ray photoelectron spectroscopy (XPS) (Thermo Fisher Scientific, NEXSA, Altrincham, UK), with the C 1s signal at 284.8 eV as the calibration standard for binding energies. The optical absorption properties of the material were investigated through ultraviolet–visible diffuse reflectance (UV-vis) spectroscopy (Agilent, Cary 5000, Hong Kong, China).
7
Porous Se@SiO2 Nanocomposites Synthesis
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The detailed synthesis procedures of porous Se@SiO2 nanocomposites were performed according to the methods reported in our previous study.18 (link) Briefly, Cu2–xSe nanocrystals were first prepared and mixed with n-hexane, n-hexanol, Triton X-100, deionized water, and tetraethyl orthosilicate. [Cu(NH3)4]2+ was developed by the addition of ammonium hydroxide to the mixture. Oxygen was used to oxidize Se2− to develop Se quantum dots. The silica coated the Se quantum dots by orthosilicate hydrolysis in an alkaline environment, forming solid Se@SiO2 nanocomposites. Then, the solid Se@SiO2 nanocomposites were coated with PVP and etched in hot water to construct porous structures. Se@SiO2 nanocomposites were characterized by means of a D/max-2550 PC X-ray diffractometer (XRD, Cu–Kα radiation; Rigaku; Tokyo, Japan) and transmission electronic microscopy (JEM-2100F). The cumulative release kinetics of Se from the porous Se@SiO2 nanocomposites in PBS at 37°C with different pH values (pH 7.4 and pH 5.0) were consistent with those reported in our previous study.18 (link)
8
Synthesis and Characterization of Porous Selenium Nanoparticles
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The porous SeNPs were prepared as previously described.17 (link),21 In summary, the initial step involved the preparation of Cu2–xSe nanocrystals. Subsequently, a combination of n-hexane, n-hexanol, Triton X-100, deionized water, and tetraethyl orthosilicate was introduced. The addition of ammonium hydroxide facilitates the generation of [Cu (NH3)4]2+. The utilization of oxygen serves to oxidize Se2−, leading to the formation of selenium quantum dots (QDs). Silica-coated selenium QDs were then created through the hydrolysis of orthosilicate in an alkaline environment, resulting in the formation of solid SeNPs. These solid SeNPs underwent coating with PVP and subsequent etching in hot water to induce the development of porous structures. The characterization of SeNPs was carried out using a D/max-2550 PC XRD (Cu–Kα radiation; Rigaku; Tokyo, Japan) and a transmission electron microscope (TEM, JEM-2100F).
9
Comprehensive Characterization of Synthesized Products
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The as-synthesized products were characterized with a D/max-2550 PC X-ray diffractometer (XRD; Rigaku, Cu-Ka radiation), a scanning electron microscope (SEM; S-4800), a transmission electron microscope (TEM; JEM-2100F) equipped with an energy dispersive X-ray spectrometer (EDX), and an X-ray photoelectron spectrometer (ESCALab MKII) with an excitation source of Mg-K radiation. The surface area and pore size distribution of the products were determined by Brunauer-Emmett-Teller (BET) nitrogen adsorption-desorption and Barrett-Joyner-Halenda (BJH) methods (Micromeritics, ASAP2020). The electrical properties of samples were tested in situ by using a TEM-scanning tunneling microscope (TEM-STM) holder (commercialized by Nanofactory Instruments AB, GÖteborg, Sweden), which was arranged within a 200 kV high resolution TEM (JEM-2100F) with beam-blank irradiation of a low illumination.
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