Axs new d8advance diffractometer

The NP films prepared on Si wafers via the EPD process were characterized as follows. The X-ray diffraction (XRD) patterns were collected using an AXS New D8 advance diffractometer (Bruker, Billerica, MA, USA) with a Cu K-α radiation source and a LynxEye line detector. The samples for XRD were prepared by drop-casting the Cu_2-xS NPs onto zero-background quartz. Field-emission scanning electron microscopy (FE-SEM) and energy-dispersive spectrometry (EDS) were performed using a Carl Zeiss SIGMA microscope. In addition, X-ray photoelectron spectroscopy (XPS) was performed on a K-alpha system (Thermo Fisher Scientific, Waltham, MA, USA) with an Al K-α source. FTIR spectroscopy was performed in a Nicolet 6700 spectrometer (Thermo Fisher Scientific) at room temperature. The FTIR samples were prepared as a powder. Zeta potential and dynamic light scattering (DLS) measurements were performed using a Malvern Zetasizer Pro (Malvern Instruments, Malvern, WR, UK) instrument with a universal dip cell kit for samples in non-aqueous (palladium electrodes with 2 mm spacing).