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Dbsa surfactant

Manufactured by Merck Group

DBSA (Dodecylbenzenesulfonic acid) is a surfactant manufactured by Merck Group. It is a chemical compound that lowers the surface tension between two liquids or between a liquid and a solid. The core function of DBSA is to act as a wetting agent, emulsifier, and dispersant in various industrial and laboratory applications.

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5 protocols using dbsa surfactant

1

Fabrication of PEDOT:PSS Thin Films

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A solution of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) (H.C. StarckClevios PH500), was then spun onto the silicon substrate with the pillars yielding a thickness of h∼80 nm. The PEDOT:PSS solution was previously doped with ethylene glycol (Sigma Aldrich), to enhance its electrical conductivity, and dodecyl benzene sulfonic acid (DBSA) surfactant (Sigma Aldrich), to improve film forming. After spinning, the device was baked on a hotplate at 140 °C for 60 min. The substrates were then covered with a thin (few nm) film of a Teflon-like (C4F8) polymer to ensure hydrophobicity; to do this, a modified Bosch/RIE process was utilized, with the sole passivation mode activated. In this phase, all gas flows, including SF6, argon, and oxygen, were set to zero, with the exception of the chemically inert passivation layer C4F8.
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2

Fabrication of Conductive PEDOT:PSS Films

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Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), termed PEDOT:PSS, type Clevios PH1000 was purchased from Heraeus Conductive Polymers Division.
Successively PEDOT:PSS solution was firstly doped with a 0.05 vol. of dodecyl benzene sulfonic acid (DBSA) surfactant (Sigma Aldrich) for efficient film forming, and then different concentrations v/v (0, 1, and 3%) of EG were added to enhance electrical conductivity with respect to the pristine state (Crispin et al., 2003 (link); Ouyang et al., 2004 (link); Romeo et al., 2015 (link)). One solution was prepared without EG addition and used as reference control.
Homogeneous PEDOT:PSS films at different EG concentrations were spin coated on a glass slides of 1 × 3 cm at 1500 rpm for 30 s. The final films thickness was around 80 nm, as measured with the profilometer (Tarabella et al., 2013 (link)). Slides were finally baked on a hot plate at 140 C for 60 min.
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3

PEDOT:PSS Thin Film Formation

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A solution of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate), PEDOT:PSS (H.C. StarckClevios PH500), was spun onto the silicon substrate with pillars substrate so that an estimated film thickness d ~ 80 nm was achieved. The PEDOT:PSS solution was previously doped with ethylene glycol (Sigma Aldrich) to enhance its electrical conductivity and dodecyl benzene sulfonic acid (DBSA) surfactant (Sigma Aldrich) to improve film forming. After the spinning the device was baked on a hotplate at 140°C for 60 min. Silver metal contacts over the conductive PEDOT:PSS film were realized at a distance of ~10 mm to be used as source and drain contacts.
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4

Fabrication of PEDOT:PSS-based OECT Devices

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The OECT channel was made of PEDOT:PSS, a p-type semiconductive polymer widely used in bioelectronics because of its demonstrated properties of stability and biocompatibility.29 ,30 (link) Before patterning, the solution was doped with diethylene glycol 20% (Sigma) with 0.05% by vol. of dodecyl benzene sulfonic acid (DBSA) surfactant (Sigma Aldrich), in order to enhance its electrical conductivity and film-forming properties, respectively.31 ,32 The OECT channel, with a final width of 2 mm, was patterned on a square glass slide of 2 × 2 cm and the PEDOT:PSS was spun onto the substrate using a first ramp of 6 s (at 450 rpm) followed by a 30 s plateau at 1500 rpm. The final film thickness was d ∼ 100 nm, as measured using a profilometer. Devices were finally baked on a hotplate at 120 °C for 120 min. A PDMS well of about 500 μL in volume was used to confine the mould onto the channel, defined by the overlapping area of the mould with the PEDOT:PSS stripe.
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5

PEDOT:PSS Thin Film Deposition and Teflon Coating

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A solution of poly(3,4-ethylenedioxythiophene) doped with poly (styrene sulfonate), PEDOT:PSS (H.C. StarckClevios PH500), was spun onto the silicon substrate with pillars substrate so that an estimated film thickness d ∼ 80 nm was achieved. The PEDOT:PSS solution was previously doped with ethylene glycol (Sigma Aldrich) to enhance its electrical conductivity and dodecyl benzene sulfonic acid (DBSA) surfactant (Sigma Aldrich) to improve film forming. After the spinning the device was baked on a hotplate at 140 °C for 60 min. The substrates were then covered with a thin (few nm) film of a teflon-like (C4F8) polymer to ensure hydrophobicity; to do this, a modified Bosch/RIE process was utilized (SI 500 Sentech Instruments Gmbh, Berlin, Germany), where solely the passivation mode was activated. In this phase, all gas flows, including SF6, argon, and oxygen, are set to zero, with the exception of the chemical inert passivation layer C4F8.
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