Su8230
The SU8230 is a high-resolution scanning electron microscope (SEM) manufactured by Hitachi. It is designed for advanced materials analysis and characterization. The SU8230 offers high-quality imaging and analytical capabilities, enabling detailed examination of a wide range of samples.
Lab products found in correlation
168 protocols using su8230
Synthesis of a-Si Nanotips on Si Substrate
Characterization of AuNP/TNP Heterostructures
Electrospun Nonwoven Fibre Characterization
Characterization of Graphene Oxide Membranes
Comprehensive Material Characterization Protocol
Cryogenic SEM of Microgel Suspensions
Surface Composition Analysis of Aged Samples
Characterization of GaN Film Crystallinity
of the grown GaN films was evaluated using X-ray diffraction (XRD;
Rigaku, ATX-G) with Cu Kα1 radiation, a Ge(220) monochromator,
a 2.0 × 0.5 mm2 collimator, and a 5.0 × 1.0 mm2 receiving slit. XRCs for the symmetric (0002) plane of the
GaN layers were measured in the step-scan mode with a step of 0.005°.
The film thickness and the surface morphology were measured using
scanning electron microscopy (SEM; Hitachi High-Technologies, SU-8230)
with an acceleration voltage of 10 kV, and ordering of the atoms was
observed using high-resolution transmission electron microscopy (HRTEM;
JEOL, JEM-ARM200F) with an acceleration voltage of 200 kV. The N/Ga
ratio of the grown GaN surface was determined from X-ray photoelectron
spectroscopy (XPS) measurements (Ulvac-Phi, XPS 1600) with a Mg Kα
(1253.6 eV) X-ray source. The take-off angle of photoelectrons was
90° with respect to the surface. Elemental compositions were
calculated from the integration ratio of each component for Ga 3d
and N 1s.
Comprehensive Morphological and Structural Analysis of Electrodes
Optimized CEO-CSNPs Morphology Analysis
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