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168 protocols using su8230

1

Synthesis of a-Si Nanotips on Si Substrate

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To make an aqueous solution, KI powder (0.002 mol, Sigma-Aldrich, Seoul, Korea) and 10 mL of Au NPs (3 nM, particle size = 20 nm, Sigma-Aldrich, Seoul, Korea) dispersed in H2O were mixed in 80 mL of deionized water. Subsequently, 20 mL of 30% aqueous SMS (Gelest, Morrisville, PA, USA) was added to the mixed solution. In order to mix the solution properly, the aqueous solution was stirred magnetically at 85 °C on a hot plate. Then, samples were prepared by dropping aqueous solution onto the Si substrate. All samples were cooled down 4 °C or room temperature (RT), or maintained at 70 °C over 24 h until the solution droplets dried. The structural, compositional, and optical properties of the samples were investigated using scanning electron microscopy (SEM, SU-8230, Hitachi, Japan), energy-dispersive X-ray spectrometry (EDX, SU-8230, Hitachi, Japan), X-ray diffraction (XRD, X’pert Pro Powder, PANalytical, Netherlands), transmission electron microscopy (TEM, HD-2300A, Hitachi, Japan), and PL (SpectraPro 500i, Acton, USA). To further investigate the growth mechanism of the a-Si nanotips on the Si substrate, focused ion beam (FIB)-SEM (FB-2100, Hitachi, Japan) and atomic force microscopy (AFM, MOD-1M series, Nanofocus, Richmond, VA, USA) analyses were also performed.
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2

Characterization of AuNP/TNP Heterostructures

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A zeta potential analyzer (Otsuka Electronics ELSZ-1000) was used to analyze a surface charge of AuNPs and TNPs in deionized water. A UV-vis spectrometer (SHIMADZU UV-1800) was used for measuring light absorption of AnNPs, TNPs, and (AuNP/TNP)n multilayered heterostructures. Field emission TEMs (FEI Company Tecnai F20 and FEI Company Talos F200X) were used with an accelerating voltage of 200 kV for analyzing a size and shape of AuNPs and TNPs. Surface images of SEM were obtained by field emission SEMs (FEI Company Nova230 and Hitachi SU5000) with an accelerating voltage of 5 kV for (AuNP/TNP)n multilayered heterostructures and field emission SEMs (Hitachi SU8230 and Hitachi SU5000) with an accelerating voltage of 5 kV for Co-OEC/(AuNP/TNP)n photoanodes, respectively. EDAX spectra were recorded using a field emission SEM (Hitachi SU8230) with an accelerating voltage of 15 kV for elemental analysis of (AuNP/TNP)n multilayered heterostructures and Co-OEC/(AuNP/TNP)n photoanodes.
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3

Electrospun Nonwoven Fibre Characterization

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SEM imaging using a Hitachi SU8230 of electrospun nonwoven was employed to study fibre morphology, diameter and fibre alignment. Electrospun sample thickness was measured using a micrometer. Hydrogels and nonwoven-reinforced hydrogels were washed and allowed to fully hydrate in distilled water for 24 h, frozen at −80 °C for 24 h and lyophilised for a further 24 h. SEM imaging using a Hitachi SU8230 was employed to study pore architecture, fibre alignment and integration between the hydrogel and nonwoven.
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4

Characterization of Graphene Oxide Membranes

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The variations in the interlayer spacing, i.e., the nanochannel size, of the GO membranes were investigated by X-ray diffraction (XRD; Smart lab, RIGAKU, Austin, TX, US) with Cu–Kα1 radiation (wavelength: 0.154 nm). The morphologies of the GO membranes were characterized by scanning electron microscopy (SEM; SU8230, Hitachi, Tokyo, Japan). The chemical structure and composition of the membranes were examined by SEM–energy-dispersive X-ray spectroscopy (SEM–EDS; SU8230, Hitachi, Tokyo, Japan), Fourier-transform infrared spectroscopy (FT-IR; Nicolet iS50, Thermo Fisher Scientific, Waltham, MA, US), and X-ray photoelectron spectroscopy (XPS; Axis-Supra, Kratos, Manchester, UK). The membrane surface charge was determined using a zeta-potential analyzer (ELS-Z2, Otsuka, Osaka, Japan) in which a 0.01 M NaCl solution was employed as the electrolyte solution, and the surface hydrophilicity was measured using a contact-angle analyzer (Phoenix 300 Plus, SEO Co., Ltd., Suwon, South Korea) by dropping 5 µL of DI water on the membrane surface.
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5

Comprehensive Material Characterization Protocol

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The morphologies were characterized by Hitachi SU-8230 field emission scanning electron microscopy (SEM, Hitachi SU-8230). TEM, energy-dispersive X-ray analysis (EDX), and elemental mapping were performed using a Talos instrument with an acceleration voltage of 300 kV. X-ray diffraction (XRD, Bruker Advance D8, Ultima IV with D/teX Ultra with Cu-Kα radiation) was employed to characterize the crystalline structures of samples with a scanning rate of 5° min−1. X-ray photoelectron spectra (XPS, ESCALAB 250Xi) were acquired on a Thermo SCIENTIFIC ESCALAB 250Xi with Al Kα (hυ = 1486.8 eV) as the excitation source. Raman spectra were performed on a HORIBA LabRAM HR Evolution using a 532 nm laser as the excitation source. The micro-CT was detected by Diondo D2 micro-CT scan system.
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6

Cryogenic SEM of Microgel Suspensions

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The microgel suspensions and microgel-stabilized emulsions were observed by a scanning electron microscope (SU8230, Hitachi High-Technologies Corporation, Tokyo, Japan) equipped with a cryogenic unit (Alto2500, Gatan UK, Abingdon, Oxfordshire, UK). The samples were filled into two metal hollow rivets with the edges contacted, and rapidly frozen in nitrogen slush. The lower part of the rivets was fixed on a metal stage and then inserted into the loading chamber of the microscope, and subsequently split into the original two parts to remove the upper one. The cleaved surface of the lower rivet was observed after appropriate sublimation at −120 °C.
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7

Surface Composition Analysis of Aged Samples

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Energy dispersive X-ray spectroscopy (SU8230; Hitachi High Technologies, Tokyo, Japan) with a measurement voltage of 15 kV at 1000 magnifications was used to observe differences in the surface components before and after aging.
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8

Characterization of GaN Film Crystallinity

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The crystallinity
of the grown GaN films was evaluated using X-ray diffraction (XRD;
Rigaku, ATX-G) with Cu Kα1 radiation, a Ge(220) monochromator,
a 2.0 × 0.5 mm2 collimator, and a 5.0 × 1.0 mm2 receiving slit. XRCs for the symmetric (0002) plane of the
GaN layers were measured in the step-scan mode with a step of 0.005°.
The film thickness and the surface morphology were measured using
scanning electron microscopy (SEM; Hitachi High-Technologies, SU-8230)
with an acceleration voltage of 10 kV, and ordering of the atoms was
observed using high-resolution transmission electron microscopy (HRTEM;
JEOL, JEM-ARM200F) with an acceleration voltage of 200 kV. The N/Ga
ratio of the grown GaN surface was determined from X-ray photoelectron
spectroscopy (XPS) measurements (Ulvac-Phi, XPS 1600) with a Mg Kα
(1253.6 eV) X-ray source. The take-off angle of photoelectrons was
90° with respect to the surface. Elemental compositions were
calculated from the integration ratio of each component for Ga 3d
and N 1s.
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9

Comprehensive Morphological and Structural Analysis of Electrodes

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The surface morphology of the electrodes was characterized using a Hitachi SU 8230 (Hitachi High-Tech Corporation, Tokyo, Japan) scanning electron microscope (SEM), equipped with an energy-dispersive X-ray detector from Oxford Instruments (Oxford, UK). Furthermore, the SEM images were analyzed using “Image J” software (LOCI, University of Wisconsin) in order to determine the length and diameter distribution of the columns. Over 500 columns were measured, and the corresponding histograms were fit with a normal distribution. High-resolution scanning transmission electron (HR-STEM) micrographs were acquired for the same location at the same magnification using three different types of detectors, namely, a surface electron detector (SEM), a high-angle annular dark-field detector for atomic mass phase contrast (ZC-phase contrast), and a bright-field detector for transmission electron imaging (TEM), and all of them were obtained using a Hitachi HD-2700 system (Hitachi High-Tech Corporation, Tokyo, Japan) operating at 200 kV. The X-ray diffraction spectra were recorded in a Rigaku SmartLab (Tokyo, Japan) using Cu Kα radiation (λ = 0.15406 nm) at 45 kV in a 2θ range of 5°–90°.
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10

Optimized CEO-CSNPs Morphology Analysis

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The optimized CEO-CSNPs morphology was determined using a scanning electron microscope (Hitachi High-Tech, SU8230, Hitachi High-Technologies Corporation, Tokyo, Japan). Before the scanning electron microscope analysis, the optimized CEO-CSNPs were lyophilized using a freeze-dryer Lyovapor L-200 (Buchi iberica, Barcelona, Spain). Lyophilized nanoparticles were assembled on aluminum stubs held by coal adhesive tape. The scanning electron microscope was used to visualize the morphology of the CEO-CSNPs under high vacuum at 10 kV accelerated voltage [63 (link)].
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