Sigma hd microscope

SEM images were obtained by using a field emission gun scanning electron microscope (FEG-SEM Zeiss Sigma HD microscope) equipped with an in-lens detector working at 1 kV and at a short working distance (WD) equal to 3.3 mm for the TiO₂ thin film images and equipped with a secondary electron detector (SE) working at 1 kV and at a short working distance (WD) equal to 3.8 mm for the TiO₂/PBA nanocomposite images. Tapping mode topography and phase imaging was accomplished by using an Innova AFM (Bruker) with NanoDrive v8.02 software. Tapping mode images were acquired by using silicon tips from Nanosensors (PPP NCSTR) with a resonance frequency ranging between 76 and 263 kHz. Images were processed by using WsXM software. Fourier transform-infrared (FTIR) spectra were collected in the attenuated total reflection (ATR) mode by using a Vertex 70 spectrometer with a germanium crystal. XPS spectra were collected on a SPECS (Phoibos MCD 150) X-ray photoelectron spectrometer, by using Mg Kα (hν = 1253.6 eV) X-ray source having a 150 W (12 mA, 12.5 kV) electron beam power and a 7 × 20 mm spot size. The emissions of photoelectrons from the sample were analyzed at a takeoff angle of 90° under ultra-high vacuum conditions (1·10⁻⁸ Pa). High resolution spectra were collected at a pass energy of 10 eV for S 2p core XPS levels. No charge compensation was applied during acquisition.

The top view and cross-sectional morphologies of the as-grown ZnO NWs and those coated with different thin films were characterized with scanning electron microscopy (SEM) (Zeiss SIGMA HD microscope, Germany). The cross-sectional images of the fabricated capacitors were observed using field-emission TEM (FEI Tecnai G2 F20 S-TWIN) with an accelerating voltage of 200 kV. Capacitance-voltage (C-V) and impedance measurements were carried out on a precision impedance analyzer (4294A; Agilent Technologies, Malaysia). Current-voltage (I-V) was measured on a semiconductor device analyzer (Agilent B1500A; Agilent Technologies, Japan). Charging-discharging characteristics of the capacitors were measured on a function/arbitrary waveform generator (Agilent 33250A; Agilent Technologies, Germany).