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Su8000

Manufactured by JEOL
Sourced in Japan

The JEOL SU8000 is a high-resolution field emission scanning electron microscope (FE-SEM) designed for advanced materials analysis. It features a large-angle backscattered electron (LABe) detector and an in-lens secondary electron (SE) detector for high-quality imaging. The SU8000 provides a wide range of accelerating voltages and probe currents to accommodate various sample types and applications.

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2 protocols using su8000

1

Morphological Analysis of CuO/NiO Nanowires

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The microstructure, morphology and crystallinity of the as-prepared CuO and CuO/NiO nanowires were analyzed by transmission electron microscopy (TEM, JEM-2100F CS STEM, JEOL, Japan), scanning electron microscopy (SEM, SU8000, JEOL, Tokyo, Japan), and X-ray diffraction (XRD), respectively. The CuO/NiO nanowires were assembled into coin cells as the anode for testing LIB performance. The assembling sequence from bottom to top is as follows: bottom stainless steel case, Li metal cathode, separator, CuO/NiO nanowires, spring, and top stainless steel case; the electrolyte is ethylene carbonate (EC)/diethyl carbonate (DEC) with 1 M LiPF6. The cycle tests of the anode materials were performed between 0.1–3 V under a constant current of 0.1 C (70 mA g−1) at room temperature. For comparison, evolution of the morphology and microstructure of the CuO/NiO nanowires upon cycling were studied by TEM, where a constant current of 1 µA was employed for the formation process in the 1st cycle by Keithley 2400.
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2

Characterization of ITO Nanowires

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Characterization of the grown nanowires was conducted with FE-SEM (Hitachi SU8000, Tokyo, Japan), HR-TEM (JEOL JEM-2100F CS STEM, Tokyo, Japan), grazing angle XRD (Bruker D8 discover, Fitchburg, WI, USA), and XPS (PHI 5000 Versaprobe, ULVAC-PHI, Chigasaki, Japan). For the optical properties, PL (Horiba LabRam-HR, Longjumeau, France) measurements were conducted. For the electrical properties, we measured resistivity using a special method reported by Gu et al. [25 (link)]; this accurate method was designed for the resistivity of a single nanowire, eliminating possible errors, including contact resistances or Schottky contacts existing in two-probe measurements and four-probe measurements, respectively. To fabricate the nanodevice for the electrical measurements, the as-grown ITO NWs substrate was sonicated in deionized water for the separation of nanowires from the substrate; then droplets of solution containing ITO NWs were dripped on a previously prepared Si/SiO2 wafer with four independent Ag electrodes. Each nanowire was linked to four independent electrodes with Pt via selective deposition by a focused ion beam (FIB, FEI Nova-200 NanoLab Compatible, Hillsboro, OR, USA). The fabrication process is shown in Supplementary Materials Figure S2.
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