MoS2 flakes prepared on the sapphire substrate were systematically off-line measured by optical microscope, Raman spectra, ex-situ DRS, and atomic force microscope (AFM). These measurements were operated at room temperature. Firstly, optical images were obtained with an optical microscope (GFM-550, Shanghai Guangmi Instrument Co., Ltd., Shanghai, China). Secondly, Raman spectra were used to evaluate the quality and structure of the sample by Raman microscope (HR Evolution 800, Horiba, Paris, France). A ×50 objective lens and the excitation wavelength of 532 nm were used. Afterward, ex-situ DRS at room temperature were obtained by , where and represent the reflected intensity of the substrate surfaces covered with and without MoS2 flakes, respectively. At last, the thickness of MoS2 flakes was acquired by an AFM (Dimension Icon, Bruker, Santa Barbara, CA, USA) in PeakForce tapping mode.
Hr evolution 800
Manufactured by Horiba
Sourced in Japan
The HR Evolution 800 is a high-resolution X-ray diffractometer designed for advanced materials analysis. It provides precise structural characterization of a wide range of materials, including thin films, powders, and single crystals. The instrument features a high-intensity X-ray source and advanced detector technology to deliver accurate, reliable data for research and industrial applications.
Automatically generated - may contain errors
Lab products found in correlation
Su 70, by Hitachi (2 mentions)
Dimension icon, by Bruker (1 mentions)
Jem 2100, by JEOL (1 mentions)
Multimode 8, by Bruker (1 mentions)
Jsm 6700f sem, by JEOL (1 mentions)
Jem 2100f, by JEOL (1 mentions)
Ht7700, by Hitachi (1 mentions)
Tecnai g2 f20 s twin, by Rigaku (1 mentions)
Ultima 4, by Rigaku (1 mentions)
Escalab 250xi instrument, by Thermo Fisher Scientific (1 mentions)
6 protocols using hr evolution 800
1
Characterization of MoS2 Flakes
2
Fabrication and Characterization of Au@Ag/3D-Si Substrate
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The preparation procedure of the Au@Ag/3D-Si substrate is elucidated in Fig. 1 . 3D-Si was manufactured via a wet texturing process in NaOH solution with the aid of the anisotropic etching property of single crystal silicon. Via a thermal-evaporation method, uniform and continuous Ag film of 30 nm in thickness was deposited on the 3D-Si substrate. Then, the obtained Ag film/3D-Si substrate was annealed at 500 °C for 30 min. Next, the AgNP/3D-Si substrate was deposited by the Au film 10 nm in thickness with the ion sputtering equipment and formed Au@Ag/3D-Si substrate. As a contrast, we also prepared 3D-Si, AgNP/3D-Si (Ag/3D-Si) and Au film/3D-Si (Au/3D-Si). The 3D-Si, Ag/3D-Si and Au/3D-Si substrates were fabricated with the same method as preparing the Au@Ag/3D-Si substrate.
Scanning electron microscope (SEM, Zeiss Gemini Ultra-55) and atomic force microscopy (AFM, Bruker Multimode 8) were chosen to characterize the surface morphology of the Au@Ag/3D-Si substrate. SERS behaviors of the Au@Ag/3D-Si substrate were evaluated with a Raman microscope system (Horiba HR Evolution 800) at laser wavelength of 532 nm. The TEM image of Au@Ag nanoparticles was obtained with a transmission electron microscopy system (JEOL, JEM-2100).
Scanning electron microscope (SEM, Zeiss Gemini Ultra-55) and atomic force microscopy (AFM, Bruker Multimode 8) were chosen to characterize the surface morphology of the Au@Ag/3D-Si substrate. SERS behaviors of the Au@Ag/3D-Si substrate were evaluated with a Raman microscope system (Horiba HR Evolution 800) at laser wavelength of 532 nm. The TEM image of Au@Ag nanoparticles was obtained with a transmission electron microscopy system (JEOL, JEM-2100).
3
Morphology and Structure Analysis of Sea Urchin-like Au NPs
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The morphology and structures of sea urchin-like Au NPs were studied using a field emission scanning electron microscope (SEM, 3.0 kV, SU70, Hitachi, Japan), SEM studies were performed on a JEOL JSM-6700F SEM operating at 3.0 kV. Transmission electron microscopy (TEM) was performed by a Hitachi HT7700 operated under 100 kV. High-resolution TEM and (HRTEM) were taken by a JEOL JEM-2100F operated under 200 kV. The surface-enhanced Raman spectroscopy was performed using a Raman spectrometer (Horiba HR Evolution 800) with laser excitation at 633 nm.
4
Characterization of Flower-like Gold Nanoparticles
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The morphologies and structures of flower like hollow gold nanoparticles were studied using scanning electron microscopy (SEM, 3.0 kV, SU70, Hitachi, Japan), transmission electron microscopy (TEM, Tecnai G2 F20 S-TWIN), high-resolution TEM (HRTEM), and TEM-EDS mapping, X-ray diffraction (XRD, Cu Kα1 radiation, Rigaku/Ultima IV, Japan). Absorption spectra were recorded on a Cary 60 Scan UV-vis spectrophotometer. The surface-enhanced Raman spectroscopy was performed using a confocal Raman microscope (Horiba HR Evolution 800) with laser excitation at 633 nm.
5
Electrical Characterization of MoS2/WTe2 FET
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The electrical properties of the MoS2/WTe2 FET biosensor were determined using a Keithley 4200-SCS semiconductor parameter analyzer at room temperature and in atmospheric pressure, dry, dark, and well-ventilated conditions. A constant stride interval of 20 mV was applied to the VDS–IDS curve. The structure and morphologies of the prepared samples were analyzed using SEM (Zeiss Gemini Ultra-55, 3.0 kV, Oberkochen, Germany) and EDS. AFM was used to determine the roughness of the MoS2/WTe2 surface. The Raman spectrometer used in this study was a Horiba HR Evolution 800 with a 532 nm excitation laser. The XPS characterization was conducted using a Thermo Fisher Scientific Escalab 250Xi instrument (Waltham, MA, USA) with an Al K X-ray source at 150 W and a spot size of 500. The spectra were acquired with an operating voltage of 12.5 kV and a spectrometer pressure of 8 × 10−10 mbar. The XPS spectra were calibrated by the peak of C 1 s at 282 eV, normalized by the baseline level, and curve-fitted by smart function.
6
Characterization of AgCl Microcubes
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The morphologies of the prepared AgCl microcubes were characterized by scanning electron microscope (SEM, 3.0 kV, SU-70, Tokyo, Japan). A confocal Raman spectrometer (Horiba HR Evolution 800, Tokyo, Japan) was used to record Raman spectra. The spectral resolution was less than 0.35 cm−1, and spectral repeatability was less than 0.03 cm−1. A 633 nm laser was focused onto the sample by a long working distance objective (100×, 0.90 NA); the incident laser power was 10 mW with a 2.5% NA filter. The acquisition time was 5 S, accumulated 3 times. The obtained data was analyzed using spectral analysis software package LabSpec 6.
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