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Gemini 500 sem

Manufactured by Zeiss
Sourced in United States

The Gemini 500 SEM is a scanning electron microscope (SEM) developed by Zeiss. It is designed for high-resolution imaging and analysis of a wide range of materials. The Gemini 500 SEM utilizes advanced electron optics and detectors to provide detailed information about the surface topography and composition of samples.

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4 protocols using gemini 500 sem

1

Fiber Characterization via Multimodal Analysis

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Fiber morphology and diameter were examined using scanning electron microscopy (Zeiss Gemini 500 SEM) with an accelerating voltage of 2 kV. ImageJ™ open source software (National Institutes of Health) was used to measure the mean fiber diameters. Fifty measurements were taken for each sample from three separate images. Energy Dispersive X-ray spectroscopy (EDX) spectra were collected with an accelerating voltage of 10 kV. Samples were sputter coated with carbon for SEM and EDX. Chemical structure was analyzed with Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy (ATR-FTIR Spectrometer PerkinElmer Frontier) at each reaction step. Each spectrum was an average of 128 scans obtained between 4000 and 600 cm−1 at a resolution of 4 cm−1. Four spectra were collected per sample. Alkyne substitution was confirmed with Raman spectroscopy (Renishaw InVia Confocal Raman microscope). Each spectrum was obtained between 3250 and 200 cm−1 with an excitation wavelength of 785 nm and a resolution of ~1 cm−1. Three spectra were collected per sample. Crystalline structure was analyzed with X-ray diffraction (Bruker D8 Advance ECO powder diffractometer, 1 kW Cu-Kα source). Three spectra were collected per sample.
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2

Nanoparticle-Coated Wafer Characterization

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A Zeiss Gemini 500 SEM was used. Silicon wafer substrates
coated
with a nanoparticle layer were used without further modification.
SiC monoliths were carefully broken to observe the inner pores after
coating. Cross-sectional samples of inverse opals were fabricated
by breaking the substrate along the crystal plane of the wafer using
a diamond cutter only in the corners.
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3

Nanomaterial Structural Characterization by SEM and TEM

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Scanning electron microscopy (SEM) images were collected on either JEOL JSM-6700 SEM or Zeiss Gemini 500 SEM. Transmission electron microscopy (TEM) samples were prepared by gently rubbing a TEM grid against the vertical nanostructure arrays, which facilitated the transfer of some nanostructures onto the TEM grid surface. TEM images and SAED patterns were collected on either a FEI/PHILIPS CM 120 TEM or a Talos F200C G2 TEM at an accelerating voltage of 200 kV. Au standards were used to calibrate the TEMs for HRTEM. XPS analysis were carried out using a Nexus X-ray Photoelectron Spectrometer.
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4

Characterizing Carbon Nanotube Morphology

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Light microscopy (Olympus GX35 inverted microscope, Olympus Co., Tokyo, Japan), scanning electron microscopy (SEM, FEI Quanta 650, Thermo Fisher Scientific Co., Waltham, MA, USA and Gemini 500 SEM, Zeiss Co., Berlin, Germany) and transmission electron microscopy (TEM, FEI Talos, Thermo Fisher Scientific Co., Waltham, MA, USA) at an acceleration voltage of 200 kV) were utilized to examine the size and morphology of the grown CNTs and their growth topology.
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