D8 discover

Characterization of bio-AgNPs particles was carried out according to methods described previously [4 (link)]. The bio-AgNPs were characterized by UV-visible (UV-vis) spectroscopy. UV-vis spectra were obtained using a Biochrom WPA Biowave II UV/Visible Spectrophotometer (Biochrom, Cambridge, UK). Particle size was measured by Zetasizer Nano ZS90 (Malvern Instruments, Limited, Malvern, UK). X-ray diffraction (XRD) analyses were carried out on an X-ray diffractometer (Bruker D8 DISCOVER, Bruker AXS GmBH, Karlsruhe, Germany). The high-resolution XRD patterns were measured at 3 Kw with Cu target using a scintillation counter. (λ = 1.5406 Å) at 40 kV and 40 mA were recorded in the range of 2θ = 5° to 80°. Further characterization of changes in the surface and surface composition was performed by Fourier transform infrared spectroscopy (FT-IR) (PerkinElmer Spectroscopy GX, PerkinElmer, Waltham, MA, USA). Transmission electron microscopy (TEM), using a JEM-1200EX microscope (JEOL Ltd., Akishima-shi, Japan) was performed to determine the size and morphology of bio-AgNPs. TEM images of bio-AgNPs were obtained at an accelerating voltage of 300 kV.

X-ray diffraction (XRD) spectra were measured of two samples comprising different hafnium oxide layers on a Si substrate. The hafnium oxide layer was sputter deposited for 900 s on a rotating substrate to achieve a homogeneous HfO₂ layer and in a static wedge-deposition mode to obtain a gradient HfO_x layer. From the two 4-in. test wafers, samples were selected from the same position in the center of the wafer, where a similar thickness of $\approx 30\mathrm{nm}$ of hafnium oxide is expected and a composition of HfO_1.8 of the wedged layer. The XRD system (Bruker D8 Discover, Bruker Corporation, USA) consists of a copper Kα radiation source and a Lynxeye XE-T detector with an energy resolution < 380 eV at 8 keV. The measured data are filtered to remove Kα-contributions, the background is subtracted, and they are normalized to the Si (100) peak at $2\theta ={69}^{\circ }$ .

To examine the surface morphology and the size of ZnO-NPs and bulk ZnO particles, transmission electron microscope (TEM) images were collected on JEOL-1200 EX instrument (JEOL Ltd., Tokyo, Japan) operating at accelerating voltages of 120 kV. For the analysis, samples were diluted in distilled water and ultrasonicated in order to break up large aggregates. A drop of solution was placed onto a carbon-coated grid and then allowed to dry in air overnight at room temperature. TEM images were acquired at 25–50 kX magnification.
To identify the crystalline phases present in ZnO-NP and bulk ZnO, an X-ray powder diffraction (XRD) analysis has been carried out using Bruker D8 DISCOVER diffractometer (Bruker, Billerica, MA, USA) equipped with X-ray tube with rotating Cu anode operating at 12 kW. All measurements were performed in parallel beam geometry with parabolic Goebel mirror in the primary beam. The X-ray diffraction patterns were recorded in grazing incidence set-up with the angle of incidence α = 2°. The lattice parameter and the crystallite size, in terms of volume weighted column-length, were determined by Pawley method using the software TOPAS 3.0 (Bruker-AXS GmbH, Karlsruhe, Deutschland).

Room temperature X-ray diffraction (XRD) measurements (θ–2θ scan) conducted with a powder diffractometer (Bruker D8 Discover sourced from Billerica, MA, USA) probed the structural composition of CNSPs. The XRD system included a Cu k_α radiation source and a state of the art LYNXEYE XE detector. X-ray source was operated with a 40 kV voltage and 25 mA current in an ultrahigh vacuum chamber. LYNXEYE detector filtered fluorescence and K_β radiation. Secondary monochromators and metal filters minimized the intensity loss and noise, especially near absorption edge energies. The full-pattern refinement program using TOPAS software from Bruker (Billerica, MA, USA), calculated the structural parameters by comparing XRD data with the crystallographic models. A modified ThompsonCox-Hastings pseudo-Voigt peak function (TCHZ) handled the zero error and detected the incident beam profile during refinement. The TCHZ was in line with the NIST 674b standard reference library. Calibrated parameters in TCHZ reflected the characteristics and axial divergence of the incident beam profile. Common TCHZ parameters were used for all XRD data. Background noise was subtracted from the XRD pattern using a Chebyshev Polynomial of 5th order. A nonlinear least square regression minimized the value of “R-weighted pattern” (Rwp) and facilitated a better convergence in Rietveld refinement.

In this study, a coplanar metal–insulator–metal (MIM) structure was used to study the capacitor of the dielectric layer, and the capacitance–voltage (C-V) was measured using the Agilent E4980A LCR meter at a measurement frequency of 1 kHz and an operating voltage from −2 V to 2 V. AlO_x is a high-dielectric material; thus, it exhibited an ultra-high capacitance value of 1007.1 nF/cm² in the capacitance measurement. With the increase in the solid content of PI, the capacitance value of the PI/AlOx dielectric layer gradually decreased, and the capacitance values were 234.41, 72.91, 27.91, and 19.67 nF/cm², as shown in Figure 1b. In addition, the electrical characteristics of the OFETs were measured using a Keithley 4200 semiconductor characterization system, and the memory properties of the OFET-based memory devices were measured using a Keithley 2636 semiconductor characterization system within a nitrogen-filled glove box. The surface morphologies and optical properties of all thin films in PTCDI-C₁₃-based OFETs were detected via atomic force microscopy (AFM, Park XE-100, Park Systems Corp., Suwon, Republic of Korea), X-ray diffraction (XRD) with a Cuka₁₊₂ of λ = 1.54184 Å (Bruker D8 Discover, Bruker, Billerica, MA, USA) and a UV-visible absorption spectrometer (GBC Cintra 202 UV–Vis spectrometer with a resolution of less than 0.9 nm, GBC, Lake Zurich, IL, USA).