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Invia micro raman spectrometer

Manufactured by Renishaw
Sourced in United Kingdom

The InVia micro-Raman spectrometer is a laboratory instrument designed for Raman spectroscopy analysis. It is capable of providing detailed information about the molecular composition and structure of various materials through the Raman scattering effect. The instrument features a microscope-based system and can be used to analyze a wide range of samples in a non-destructive manner.

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21 protocols using invia micro raman spectrometer

1

Characterization of Fe3O4@C Nanocomposite

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The crystal structures of the Fe3O4@C nanocomposite and pure C sample were studied by a powder X-ray diffractometer (XRD, RIGAKU, D/MAX 2550 VB/PC, Tokyo, Japan) at room temperature. X-ray photoelectron spectroscopy (XPS) was carried out on an ESCALab 250Xi spectrometer (Waltham, MA, USA) with an Al Kα source and the C 1s peak as the internal standard at 284.8 eV. The morphologies and texture of the samples were examined by field emission scanning electron microscopy (FE-SEM, Hitachi S-4800, Tokyo, Japan), and the element distribution was investigated with an energy-dispersive spectroscopy (EDS) detector (HITACHI, Tokyo, Japan). Raman spectra were conducted on an Invia Micro-Raman spectrometer (Renishaw, London, United Kingdom) with an excitation wavelength of 532 nm. Thermogravimetric measurements (TGA, NETZSCH TG209F1, Selb, Germany) were employed to determine the loading of carbon in Fe3O4@C in air.
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2

Characterization of Carbon Materials by Advanced Techniques

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N2 adsorption of the carbon
materials was measured on
a physical adsorption apparatus (ASAP 2460, Micromeritics, US) at
−196 °C. The samples were pretreated at 300 °C for
6 h in vacuum before adsorption. The parameters of the specific surface
and pore structure were analyzed by Brunauer–Emmett–Teller
(BET) and Barrett–Joyner–Halenda (BJH) methods. The
carbon structural features of carbon materials were determined by
a Renishaw inVia micro-Raman spectrometer (RENISHAW, LTD., UK) equipped
with an excitation laser at 514 nm. The laser was focused to about
2 μm in diameter at a power of 2 mW. The recorded Raman spectra
were from 800 to 1800 cm–1. A scanning electron
microscope (Hitachi SU8010, Japan) was operated at 3 kV, and a transmission
electron microscope (Tecnai G2 F20 S-Twin, FEI, US) was operated at
200 kV for local characterization of the carbon materials.
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3

Comprehensive Characterization Techniques

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UV-Vis spectra were taken with a Perkin Elmer Lambda 450 with an integration time of 0.5 s in an optical glass cuvette with a pathlength of 4 mm and screw-top lid with PTFE tape sealing the thread for air sensitive samples. When A > 1.0, the sample was diluted 10× and spectra values were multiplied by 10. SEM images and EDX spectra were taken using a Leo Gemini 1525 FEGSEM at an accelerating voltage of 10 keV for SEM, and 20 keV for EDX. TEM images were taken with a JEOL 2000 with an accelerating voltage of 100 keV. Raman spectra were taken with a ISA Jobin Yvon SPEX Raman exciting with a 25 mW 532 nm laser. Statistical Raman was performed with a Renishaw inVia micro-Raman Spectrometer with 633 nm laser. TGA measurements were taken with a Perkin Elmer Pyris 1 under N2 at 60 mL min–1 holding for 60 min at 100 °C before increasing the temperature at 10 °C min–1 to 800 °C. AFM was performed on samples drop-cast onto cleaned (H2SO4/H2O2) silicon wafers, dried, and soaked in ethanol and water. AFM micrographs were taken by tapping mode on a Digital Instruments Multimode VIII AFM with Nanoscope IV Digital Instruments AFM controller (Veeco) using Nanosensor tapping mode probes (Windsor Scientific).
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4

Comprehensive Material Characterization

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The surface morphology was investigated by Scanning Electron Microscopy performed on a Hitachi SU-70 FE-SEM. The crystalline structure of the films was analysed using a Renishaw inVia micro-Raman spectrometer. The power used was around 2.6 mW on a spot of 1 µm2 with a 532 nm wavelength green laser. The thickness was determined either by SEM cross section and by profilometry by applying a 2 mg force to the stylus for each measurement. The surface and the bulk chemical composition were assessed by X-Ray Photoelectron Spectroscopy on a Kratos Axis Ulltra DLD. A monochromatic Al Kα X-ray source (hν = 1486.6 eV, 20 eV pass energy) for high-resolution spectra was used. The energy calibration was performed on adventitious carbon at 285.0 eV. An Ar+ beam with Energy of 4 keV and a current of 1.6 µA sputtered the sample for 600 s in order to obtain the bulk composition.
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5

Characterization of Nanocomposite Fibers

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The as-synthesized nanoparticles and fibres were characterized for their surface morphology using scanning electron microscope (SEM, VPSEM Zeiss EVO MA-10, Germany equipped with lanthanum hexaboride electron gun) and transmission electron microscope (TEM, Technai G-20 S-TWIN) instruments. Elemental analysis was carried out using EDAX (Oxford Instruments Aztec Energy EDX system with 80 mm X-Max silicon drift detector). Raman study was performed using Renishaw in-Via micro-Raman spectrometer with an excitation source of 514.5 nm (E = 2.41 eV). The structural information of composite nanofibers was extracted by X-ray diffraction (XRD, Rigaku diffractometer Cu-Kα radiation) analysis. Dye degradation studies were carried out using a UV spectrophotometer (Specord 210 Plus double beam).
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6

Structural and Compositional Analysis of Sn-C Composite

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Scanning electron microscopy (JSM- 7401 F) and transmission electron microscopy (TEM, JEOL-2010) were used to investigate the morphology and microstructures of prepared samples. The EDS element distribution of Sn-C composite was investigated by high-angle annular dark-filed scanning TEM (HAADF-STM). Pore structure was determined by N2 adsorption at −196 °C using ASAP 2020 volumetric sorption analyzer. The pore size distributions were obtained from the adsorption branch of isotherm using the Barrett-Joyner-Halenda (BJH) model. The X-ray diffraction (XRD) measurements were examined on a Rigaku D/Max 2400 diffractometer by using CuKa radiation (40 kV, 100 mA, λ = 1.5406 Ǻ). X-ray photoelectron spectroscopy (XPS) analysis of N-rich carbon framework and PACs were performed on a PHI 5700 ESCA system using AlKa X-ray at 14 kV and 6 mA. Raman spectroscopy was examined on a Renishaw inVia Micro-Raman spectrometer at 532 nm. Thermogravimetric analysis (TGA) of Sn-C was carried out using a thermogravimetric analyzer (TA instruments) with a heating rate of 8 °C min−1 in air.
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7

Raman Characterization of Nanocrystal Films

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The NCs were dropcast on a glass substrate forming a close-packed film. Raman spectra were collected using a Renishaw InVia MicroRaman spectrometer, exciting the samples with a 100 mW diode laser at λ=532 nm, using a × 50 magnification microscope objective, with integration times up to 30 s.
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8

Raman Spectroscopy of Biological Samples

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Unpolarized Raman spectra were collected by a Renishaw InVia Micro-Raman spectrometer. This is equipped with a solid-state diode laser source at 532 nm with a nominal output power of nearly 60 mW and a Leica DM2700 M confocal microscope, with a 50X LWD and a 100X objectives. A holographic edge filter determines the high-contrast rejection for the elastically scattered light, and a diffraction grating (1800 grooves/mm) provides a spectral resolution of about 1 cm−1. Scattered photons are detected by a Peltier cooled CCD (1024 × 256 pixel). The laser power at the sample was set by neutral density filters, to prevent photo-damage of tissues. The spot size was set to a few microns. Spectra were collected in the extended scan mode, covering the 100–3800 cm−1 wavenumber range. Wire, LabSpec, MatLab, and Origin software were used to collect, refine, and analyze the raw spectra.
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9

Raman Spectroscopy for Material Analysis

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All Raman spectra were taken on a Renishaw InVia micro-Raman Spectrometer. A 50 mW 532 nm diode laser was used for excitation. The spectrometer was equipped with a with a Nikon 50x objective lens (WD = 17 mm, NA = 0.45), which produced a focal spot of 1 μm2 and a total power of 0.71 mW from the objective. All spectra were processed to remove cosmic rays using the inbuilt software package Wire 4.1.
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10

Raman Spectroscopy Mapping of Graphene

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Raman spectra of graphene were obtained with a Renishaw Invia micro-Raman spectrometer, using a diode-pumped solid-state laser (Renishaw RL523C50) with an excitation wavelength of 532 nm. Spectra were obtained at 100% power with an integration time of 10 s. The same parameters were used for Raman spectroscopy mapping of graphene/Cu samples, with a 50× lens and a step size of 1 μm. For imaging purposes, the peak intensities of the 2D peak and G peak were extracted for each pixel to provide the 2D/G ratio that was plotted as maps (vide infra). The full width half-maximum (FWHM) values (2D) of ML and BL graphene for the 2 areas were analysed by choosing 60 pixels randomly in each graphene region and the corresponding histograms were plotted.
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