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Jspm 5400

Manufactured by JEOL
Sourced in Japan

The JSPM-5400 is a scanning probe microscope (SPM) designed for high-resolution imaging and analysis of surface topography and properties at the nanoscale. It utilizes a sharp probe to scan the sample surface, providing detailed information about the sample's physical and chemical characteristics.

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4 protocols using jspm 5400

1

Detailed Characterization of SWNT Samples

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The SWNT samples and catalysts were characterized using scanning electron microscopy (SEM; SU-70, Hitachi, Japan), TEM (JEM-2100F, JEOL, Japan), Raman scattering spectroscopy (HR-800, Horiba, Japan) using Ar laser excitation with a wavelength of 488 nm, AFM (JSPM-5400, JEOL, Japan), XPS (Ulvac-phi, ESCA1600, Japan), EDX (Oxford Aztec Energy X-Max, Oxford Instruments), and XAFS (EXAFS) (High Energy Accelerator Research Organization, Photon factory, Japan, measured by Toray Research Center, Inc.). The chirality of the SWNTs was evaluated with the help of PLE map (NanoLog, Horiba, Japan) and UV-Vis-NIR spectroscopy (V-7200HK, JASCO, Japan).
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2

Spin-coating of Polystyrene and Poly(9,9-di-n-octylfluonyl-2,7diyl) Films

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Reagent grade toluene and chloroform were purchased from FUJIFILM Wako Pure Chemical (Osaka, Japan). Films of polystyrene (PS) and poly(9,9-di-n-octylfluonyl-2,7diyl) (PFO) with a 0.05 mm thickness were purchased from Goodfellow (Cambridgeshire, England). 2 wt% of PS in toluene and 0.5% of PFO in chloroform were prepared for spin coating. The samples were coated on the HF-treated native silicon substrate (100) by using a spin coater (SPN-T02HV, Sanyu Electron Co. Ltd., Tokyo, Japan) operated at 5000 rpm for 60 s and annealed at 90°C for 5 min. The thicknesses of the PS and PFO were measured by a spectroscopic ellipsometer (SE 800, Sentech, Berlin, Germany) as 38 nm and 22 nm, respectively. The surface roughness of the spin-coated PS film was measured by atomic force microscopy (JSPM-5400, JEOL, Akishima, Japan) as 0.2∼0.3 nm.
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3

Characterization of GNR Array Devices

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The structure of the GNR array sample was characterized by scanning electron microscopy (SEM; Elionix, ELS-7500EXTK and Hitachi, SU1510, Japan). The electrical measurements of the GNR devices were performed using a vacuum probe station with a semiconductor parameter analyzer (HP 4155C). The elemental analysis of the Ni film was characterized by X-ray Photoelectron Spectroscopy (XPS; Ulvac-phi, ESCA1600, Japan). The structure of the Ni surface was analyzed by atomic force microscopy (AFM; JEOL, JSPM-5400, Japan).
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4

Atomic Force Microscopy of Surface Features

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AFM
imaging was performed under air using both a Digital Instruments NanoScope
V Multimode Scanning Probe Microscopy (Bruker, MA) and a JSPM-5400
(Jeol, Japan) Scanning Probe Microscope in AC-AFM (“tapping”)
mode with a noncontact silicon nitride cantilever with a stiffness
of 0.58 N/m (Veeco Metrology, Santa Barbara, CA) at a scan speed of
1 μm/s, in the Scan-assist imaging mode. Images were flattened
with a second-order flattening procedure using Nanoscope Analysis
software (v1.5) and WinSPM software (v 5.0).
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