Ultima 4 xrd system

Manufactured by Rigaku

Sourced in Japan

The Ultima IV XRD system is a versatile X-ray diffraction (XRD) instrument designed for materials analysis. It provides accurate identification and quantification of crystalline phases within a sample. The Ultima IV XRD system features high-resolution optics, a powerful X-ray source, and advanced data analysis software to deliver reliable and reproducible results.

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Lab products found in correlation

K alpha, by Thermo Fisher Scientific (2 mentions) Nicolet is50 spectrophotometer, by Thermo Fisher Scientific (1 mentions) Arm200cf, by JEOL (1 mentions) Uv 5500pc spectrophotometer, by Metash (1 mentions)

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Ultima IV XRD Ultima IV XRD system

5 protocols using ultima 4 xrd system

Shell Microstructure and Mineralogy Analysis

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The prepared samples were sputter-coated with gold and examined with a VEGA-3 TCSCANER SEM at 10 kV accelerator voltage. Shell layers were identified by the sharp contact between two types of shell microstructure and by the change in mineralogy. Layers were described according to their position within the shell.
Fractured samples from the AMS and AMS-A were collected, and the inner surfaces of these samples were analysed in situ by XRD using a RIGAKU Ultima IV XRD system with power of 40 kV and 44 mA. The scanning speed was 2 theta/min.
Powdered samples were collected using a scalpel from the inner surface of AMS-A and AMS, corresponding to the nacre and the myostracum, respectively. The infrared spectra of powdered samples were recorded using a Fourier Transform Infrared (FTIR) spectrometer with a resolution of 4/cm on a Nicolet iS50 spectrophotometer (Thermo Scientific). The system was purged with dry N₂ to reduce interfering water vapor IR absorption, and no water contribution was verified by measuring KBr pellets.

Liao Z., Jiang Y.T., Sun Q., Fan M.H., Wang J.X, & Liang H.Y. (2019). Microstructure and in-depth proteomic analysis of Perna viridis shell. PLoS ONE, 14(7), e0219699.

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PXRD Analysis of Crystalline Samples

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The PXRD patterns were obtained using an Ultima IV XRD system (Rigaku, Tokyo, Japan) with Cu Kα radiation operated at 40 kV and 40 mA over a range of 2θ angles from 5° to 45° with an angular increment of 20° min⁻¹. The data was collected and analyzed using MDI jade 6.5 software (Bruker AXS Inc., Madison, WI, USA).

Zhou B., Teng D., Li J., Zhang Y., Qi M., Hong M, & Ren G.B. (2022). Development of a gliclazide ionic liquid and its mesoporous silica particles: an effective formulation strategy to improve oral absorption properties. RSC Advances, 12(2), 1062-1076.

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Photocatalyst Characterization Methods

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The as-prepared materials were analyzed using the Rigaku Ultima-IV XRD system with Cu-Kα radiation (λ=0.1542 nm) radiation in the range of 5–80°. The morphology of the photocatalyst was observed on a ZEISS Sigma HD field emission scanning electron microscopy (FESEM) with an energy-dispersive X-ray spectroscopy (EDX) analysis. A transmission electron microscopy (TEM) image was taken using a JEOL JEM-2100F UHR transmission electron microscope with an accelerating voltage of 200 kV. X-ray photoelectron spectroscopy (XPS) spectra were obtained via a Thermo Fisher Scientific K-Alpha with Al ka radiation (hν=1486.68 eV). The presence of single atoms was observed using a fifth-order aberration-corrected transmission electron microscope (JEOL ARM200CF). The UV/Vis absorption spectra were obtained using a Metash UV-5500PC spectrophotometer.

Zheng Y., Cai X., Chen G., Xiang D., Shi W., Shen J, & Xiang B. (2024). Single Atom-Dispersed Silver Incorporated in ZIF-8-Derived Porous Carbon for Enhanced Photothermal Activity and Antibacterial Activities. International Journal of Nanomedicine, 19, 4253-4261.

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X-ray Diffraction Analysis of GaAs

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A Rigaku Ultima IV XRD system was used for x-ray diffraction measurements.
Spectra were taken separately for different crystallographic directions (parallel and perpendicular to the GaAs [011]C main flat). A Cu Kα1 source (1.504 eV) was used for the x-ray generation. Data were taken with 2θ ranging from 15° to 50° with 0.02° step size and 0.5 deg/min.

Liu Y., Acuna W., Zhang H., Ho D.Q., Hu R., Wang Z., Janotti A., Bryant G., Davydov A.V., Zide J.M.O, & Law S. (2022). Bi₂Se₃ Growth on (001) GaAs Substrates for Terahertz Integrated Systems. ACS applied materials & interfaces, 14(37).

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In-plane X-Ray Diffraction Characterization

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Pole scan characterization was conducted using the Rigaku Ultima IV XRD system.
This technique is an in-plane measurement. After putting samples into the system and initializing, specimen alignment and precise alignment were used to align the Z,  and 2 parameters (0.5 mm split). Phi scans from 0° to 360° were taken with speed 40.00 °/min, 0.050° sampling step, ATT open, DS 1.00 mm, SS 0.5 mm and RS 0.50 mm.

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