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28 protocols using titan themis

1

Comprehensive Characterization of Photovoltaic Devices

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The IV measurements and
stability test were performed using a
Keithley 2400 digital source meter under simulated sunlight from a
Newport 94123A solar simulator matching the AM 1.5G irradiation (100
mW cm–2). The devices were measured from 1.4 to
−0.2 V at a scan rate of 10 mV/s. XPS was carried out on PHI
5000 Versa Probe III. EQE was measured by Enlitech QE-R3011. UV-absorption
spectra were recorded using a Youke UV-1901 UV–vis spectrometer.
AFM scans were obtained by Bruker Dimension Edge. STEM was performed
by an FEI Titan Themis (300 kV). The contact angle measurement was
carried out by a contact angle meter (OSA25, Kruss). SCLC and conductivity
were tested using a Keithley 2400 digital source meter. Ultraviolet
photoelectron spectroscopy (UPS) was performed using a UPS system
(Kratos, Axis Ultra) using HeI radiation of 21.22 eV.
XRD patterns
were obtained using an EMPYREAN four-circle diffractometer operated
at 40 kV and 30 mA at a scan rate of 20° per minute. SEM images
were obtained using a field-emission scanning electron microscope
(FEI inspect) at an acceleration voltage of 8 kV. Steady-state PL
and TRPL were measured using Edinburgh Instruments, FLS 920 equipped
with a light source with an excitation wavelength of 375 nm. EIS plots
were measured using a CorrTest Electrochemical Workstation under dark
conditions.
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2

Scanning Electron Microscopy Analysis of GDEs

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A Zeiss Gemini 450 scanning electron microscope equipped with an InLens secondary electron detector and a back-scattering detector was used for the morphological analysis of GDEs, prior to and following electrolyses. An accelerating voltage of 5 kV and currents of 70 to 100 pA were applied at a working distance of 4.0 to 5.1 mm. The Smile View software was used to measure the size of particles. Particle size distribution histograms were created by determining the size of at least 500 individual particles based on micrographs taken from at least three randomly selected areas.18 (link) EDX spectra were acquired and elemental composition maps were composed by using the AZtec 5.0 software (Oxford Instruments). The applied acceleration voltage and current were 10 kV and 1 nA, respectively, and a working distance of 8.5 mm was set for all EDX measurements. For the transmission electron microscopy (TEM) imaging, an FEI Titan Themis instrument was used with an accelerating voltage of 300 kV.
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3

Device Characterization Techniques

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The morphology of the devices was investigated by an optical microscope (DM 4000M, Leica), AFM (Dimension Icon, Bruker) and TEM (Titan Themis, FEI). The thin lamellae for TEM inspection were prepared using a scanning electron microscope provided with focused ion beam (Helios G4 UX, Thermo Fisher Scientific). The electrical characterization was performed by using two probe stations (both M150, Cascade) connected to different semiconductor parameter analysers: a Keithley 4200 and a Keysight B1500A. All the IV curves under DC voltages were collected using the Keithley 4200 in the ramped voltage sweep mode, for which three source-measure units are needed for drain, source and gate. Also, all the IV curves under pulse mode were collected by Keysight B1500A with two Waveform Generator/Fast Measurement Units connected to the drain and source. An Agilent E3631A DC Power Supply was used to apply constant voltage stress on the transistor gate as gate voltage for pulse measurement. All the endurance plots were collected using the recommended method described in ref. 42 (link).
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4

Electron Beam Imaging and Analysis

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EELS 2D spectrum images were acquired on a Titan Themis (FEI Company) using a K2 Summit direct electron detector in counting mode (Gatan Inc, Pleasanton, CA). This direct electron detector with high quantum efficiency (DQE up to 80%) allowed simultaneous acquisition of all relevant inner shell ionization (core loss) edges at high energy resolution and low background levels despite the low dose required to minimize beam damage.[43 (link)] The entrance aperture was 5 mm, the energy dispersion 0.5 eV/channel. The beam current was 4.0-8.5 pA, the dwell time 2.5 μs/pixel. STEM-ADF images were recorded in parallel. Concentration maps were extracted by fitting and subtracting the pre-edge background with a linear combination of power laws and integrating the intensity under the EELS edge of interest. MCR analysis of the Mg-L2,3 edge region (Fig. S6) was performed as described previously.[44 (link)]
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5

Comprehensive Structural Analysis of Perovskites

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The phase purity and crystal structure of the prepared perovskites was confirmed by room temperature XRD by using a PANalytical Empyrean X-ray diffractometer operated in reflection mode. High-resolution secondary and backscattered electron images were obtained using a FEI Scios scanning electron microscope (SEM). This instrument also served for the preparation of a thin lamella by focused ion beam (FIB).
Transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis and electron energy loss spectroscopy (EELS) analysis were carried out on a FEI Titan Themis instrument. He-ion microscopy (HIM) was carried out at Newcastle University on a Zeiss ORION NanoFab instrument, using a 25 keV He+ beam with 0.2 pA beam current to image sample CoNi∣P10 .
X-ray photoelectron spectroscopy (XPS) was carried out at two locations using monochromatic Al X-ray sources. At Newcastle University Thermo Scientific K-Alpha instrument was used while at Sasol, a Kratos Axis Ultra-DLD photoelectron spectrometer. The data were analysed using CasaXPS software. Quantification was performed based on the area of peaks of interest (Ce 3p, La 3d5/2, Ti 2p, Co 2p) after the subtraction of background of appropriate shape.
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6

Advanced Characterization of Deformed Alloys

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An X-ray equipment ISO-DEBYEFLEX 3003, operating with a short anodic tube source producing Co Kα radiation (λ = 1.788965 Å, 40 kV, and 30 mA), were used to carry out the X-ray diffraction (XRD) measurements. Electron backscatter diffraction (EBSD) measurements were performed in a Zeiss-Crossbeam XB 1540 FIB scanning electron microscope. The characterization of the deformation microstructure by electron channeling contrast imaging (ECCI) and the analysis of the fracture morphology were performed using a Zeiss-Merlin high-resolution field emission electron microscope. The atom probe tomography (APT) tips were produced via a focussed ion beam (FIB, FEI Helios Nanolab 600i) from suited regions of interest containing grain boundaries that were beforehand revealed by a preceding EBSD scan. The elemental distributions of the recrystallized alloy were investigated using APT (LEAP 3000X HR, Cameca Inc.) operated under voltage-pulsed mode. TEM foil samples were prepared by a FIB lift-out procedure, imposing a final cleaning voltage of 5 kV. HAADF scanning transmission electron microscopy (STEM) imaging was conducted in an aberration-corrected FEI Titan Themis. The acceleration voltage was 300 kV. A probe semi-convergence angle of 17 mrad with inner and outer semi-collection angles of the annular detector from 73 to 350 mrad were selected to obtain the high-resolution imaging.
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7

Structural Analysis of III-V Semiconductor Devices

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To analyze the structural quality of the devices, cross-sectional lamellas from five different devices were investigated. The lamellas were prepared using a FEI Helios Nanolab 450S focused ion beam. The cut was performed along the growth direction to reveal the Si seed and its nucleation interface with the III–V material. The lamellas were further investigated by STEM using two different instruments. High resolution images were generated using a double spherical aberration-corrected JEOL JEM-ARM200F microscope operated at 200 kV, while the EDS spectrum image was acquired with a FEI Titan Themis operated at 300 kV and equipped with ChemiSTEM technology. The EDS spectrum image was recorded with a beam current of 1.5 nA, 0.8 nm pixel spacing, and a dwell time of 4 μs pixel−1. The elemental maps were calculated from the EDS spectrum image using the In Lα1, Ga Kα1, and Ga Kα1 lines. Additional element maps can be found in Supplementary Note 3.
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8

Focused Ion Beam Specimen Preparation

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Cross-sectional STEM specimens were prepared using the standard focused ion beam (FIB) lift-out process on Thermo Scientific Helios G4 UX FIB or an FEI Strata 400 FIB equipped with an OmniProbe AutoProbe 200 nanomanipulator. High-angle annular dark-field STEM (HAADF-STEM) images were acquired on an aberration-corrected 300 keV FEI Titan Themis with a probe convergence semiangle of 21.4 mrad and inner and outer collection angles of 68 and 340 mrad, respectively.
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9

Electron Beam Imaging and Analysis

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EELS 2D spectrum images were acquired on a Titan Themis (FEI Company) using a K2 Summit direct electron detector in counting mode (Gatan Inc, Pleasanton, CA). This direct electron detector with high quantum efficiency (DQE up to 80%) allowed simultaneous acquisition of all relevant inner shell ionization (core loss) edges at high energy resolution and low background levels despite the low dose required to minimize beam damage.[43 (link)] The entrance aperture was 5 mm, the energy dispersion 0.5 eV/channel. The beam current was 4.0-8.5 pA, the dwell time 2.5 μs/pixel. STEM-ADF images were recorded in parallel. Concentration maps were extracted by fitting and subtracting the pre-edge background with a linear combination of power laws and integrating the intensity under the EELS edge of interest. MCR analysis of the Mg-L2,3 edge region (Fig. S6) was performed as described previously.[44 (link)]
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10

Atomic-Level Structural Analysis of TCP Phases

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Phase identification and morphology observation of TCP phases were carried out using TEM. HRSTEM was used to observe the structures of different TCP phases and their internal composite defects at atomic level and capture a snapshot of the core of the climbing dislocation during the phase transformation process.
Tecnai T20 TEM, which has a double tilt sample holder for structural analysis, was set at 200 kV. Atomic resolution, Z-contrast (caused by the differences in atomic numbers), imaging [through HAADF-HRSTEM] was performed in a FEI Titan Themis spherical aberration-corrected microscope operating at 300 kV.
The samples were cut to 300-μm-thick slices via electrical discharge machining, and polished to 80 μm with silicon carbide paper. The specimens with 3 mm diameter were punched out mechanically and grounded to around 25 μm in thickness. Using an electrolyte solution of 10% perchloric acid and 90% ethyl alcohol, the foils’ thicknesses were further reduced for TEM observations through twin-jet electrochemical polishing at –20 °C. The HAADF-STEM image simulations were carried out via QSTEM software28 .
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