Hr evo nano

The crystal structure was conducted on an X-ray diffractometer (XRD, Thermo ARLXTRA). The surface morphology and elementary composition were analyzed on a field emission scanning electron microscopy (FSEM, FEI Apero S). Raman spectrum was performed on an HR Evo Nano (HORIBA) with a 532 nm laser. The diffuse reflectance ultraviolet visible spectrum (UV-vis DRS) was carried on a Shimadzu UV-3600. The photoluminescence spectrum (PL) was collected in an HR Evo Nano (HORIBA). The conductive type of cuprous phosphide was characterized by a hot-probe method. During the test, the hot probe connects to the positive terminal and the cold probe to the negative terminal. The voltage was measured using a Keysight 34461A digit multimeter. The probe was heated by a hot metal bar.

The crystal structure and morphology of the AIGS-QDs and MoSe₂ were measured by an X-ray diffractometer (Bruker Advanced D8), atomic force microscopy (AFM) (Bruker Multimode 8), an optical microscope (OM) (Olympus BX51) and transmission electronic microscopy (FEI, TECNAIG2 20 LaB6). The composition and binding energy of AIGS-QDs and MoSe₂ were determined using X-ray photoelectron spectroscopy (XPS) with the PHI QUANTERA II instrument. The optical spectra were obtained by UV-vis-IR (Shimadzu, UV3600), PL and Raman spectroscopy (Horiba, HR EVO NANO) and time-resolved PL decay transients (Horiba FLTCSPC). UPS was measured using He I lines (Thermo ESCALAB 250XI). All optoelectronic characterizations were performed using Semiconductor Device Analyzer (Keysight B1500A) at room temperature and ambient conditions. The examination of the photoelectric response properties was conducted using semiconductor lasers (MDL-III442/100 mW) with a wavelength of 442 nm. The light intensity was detected with an optical power meter (Newport PMKIT-21-01).