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Hdx mri scanner

Manufactured by GE Healthcare
Sourced in United States

The HDx MRI scanner is a magnetic resonance imaging (MRI) system developed by GE Healthcare. It is designed to generate high-quality images of the body's internal structures, enabling healthcare professionals to diagnose and monitor various medical conditions.

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4 protocols using hdx mri scanner

1

Non-invasive Cerebral Blood Flow Mapping

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Three-dimensional continuous arterial spin labeling (CASL) brain imaging was performed using a 3-T GE HDx MRI scanner (GE Medical Systems, Milwaukee, WI, USA). This noninvasive mapping of cerebral blood flow was quantified during normal breathing (normocapnia), CO2 rebreathing with 95% air and 5% CO2 (hypercapnia), and hyperventilation (hypocapnia). Two-minute scans were acquired during each condition. Respiratory rate, tidal volume, and end-tidal CO2 values were recorded during each scan, and vital signs were measured at 1-minute intervals using an upper arm automatic pressure cuff and finger photoplethysmogram.
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2

Anatomical MRI Acquisition Protocol

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T1-weighted anatomical images for each participant were acquired using a 3-T GE HDx MRI scanner at Cardiff University Brain Research Imaging Centre (CUBRIC). The 3-D T1-weighted whole-brain images were acquired using a fast-spoiled gradient echo sequence (FSPGR) with 1 × 1 × 1 mm voxel size and between 168 and 182 contiguous slices. Image acquisition parameters were as follows: repetition time (TR) = 7.8 ms echo time (TE) = 2.984 ms; inversion time = 450 ms; flip angle = 15°; data matrix = 256 × 192. These data were usually acquired within one week of the participant completing the LODESTARS (mode = 3 days).
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3

MEMS Switch Actuation for MRI Systems

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The particular MEMS switch employed requires 82 V between the beam and gate to transition between the "on" and "off" state. However, the GE HDx MRI scanner only provides a -3 V (in Rx) → +5 V (in Tx) DC bias voltage on the signal line of the Rx channels to control Tx/Rx switching. Furthermore, the high voltage (82 V) must be provided during Rx and the low voltage (0 V) provided during Tx. To drive the MEMS method of switching, the MRI system electronics, therefore, must be modified and high voltage switching functionality must be added.
The simplified circuit schematic shown in Figure 3b shows the block diagram/schematic of the method devised here to convert the control voltage from -3 V → 5 V to 82 V → 0 V. An inverting driver (MCP416T) converts the -3 V → 5 V control voltage to a 10 V → 0 V control logic required by the FAN7085 integrated circuit. The constant 10 V source provided by the system is required to operate the MCP416T and FAN7085 and is up-converted to 82 V utilizing bootstrapping provided by the FAN7085 high-side gate driver. The FAN7085 integrated circuit then converts the 0 V → 10 V output to a 72 V → 82 V, which drives a BSR92P BJT to regulate the final voltage output to the MEMS switches of 82 V → 72 V.
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4

Resting-state fMRI and rTMS Protocol

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Resting-state fMRI (rs-fMRI) scans were acquired before the rTMS treatment period and following rTMS, either at 4 or 6 weeks after baseline MRI. A single 3 T GE HDx MRI scanner with an 8-channel phased-array head coil was used to collect all the MRI scans. During scanning, patients were instructed to lay flat and upright with their eyes closed without thinking about anything in particular. Whole-brain T1-weighted anatomic scans were collected (echo time [TE] 12 ms; inversion time [TI] 300 ms; flip angle 20°; 116 sagittal slices; slice thickness 1.5 mm, no gap; matrix 256 × 256; field of view [FOV] 240 mm), followed by 10 minutes of rs-fMRI (T2*-weighted echo planar imaging; TE 30 ms; TR 2000 ms; flip angle 85°; 32 axial slices; slice thickness 5 mm, no gap; matrix 64 × 64 matrix; FOV 220 mm).
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