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V vase

Manufactured by J.A. Woollam Co.
Sourced in United States

The V-VASE is a versatile spectroscopic ellipsometer designed for thin-film characterization. It measures the change in polarization state of light reflected from a sample surface, providing information about the material's optical properties and layer thicknesses.

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16 protocols using v vase

1

Optical Simulations and Reflection Measurements

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Optical simulations are conducted using a commercial finite-difference time-domain (FDTD) software package (Lumerical FDTD Solutions)75 . For this aim, three dimensional (3D) simulations are employed. A plane-wave excitation in our desire wavelength range (380–800 nm) is used. The boundary conditions in the lateral directions (x and y) are chosen as periodic while these conditions are set as a perfectly matched layer (PML) for the z direction. To measure the normal incidence light reflection from the structure, we used an in-house setup that is made of a halogen lump as the incident light source where this source is integrated into to a microscope to collect the reflected light from the surface. This collected light intensity in the microscope is entered into a spectrometer (Newport OSM2). In all of the measurements, the obtained reflection values are normalized with the reflection data from a thick Al coated sample (which has near 100% reflection in our desired frequency range). Finally, a personal computer (PC) is utilized to extract and monitor the data. In addition, the reflection of the MIMIS samples at different light incident angles is measured utilizing a spectroscopic ellipsometer tool (J. A. Woollam Co. Inc. V-VASE) at two different S and P polarizations. The light angle of incidence is chosen as 30°, 45°, and 60°.
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2

Optical Characterization of Sr3(Ir1-xRux)2O7

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High-quality single-crystals of Sr3(Ir1-xRux)2O7 (x = 0.0, 0.22, 0.34, 0.42, 0.49, 0.65, 0.72, and 0.77) were grown via flux techniques. Dopant content was determined by energy-dispersive X-ray spectroscopy measurements which show a homogeneous Ru distribution within a central value ± 3% (Fig. S2 and Table S1 of the Supplemental Material). The X-ray diffraction measurements reveal no impurity phases within instrument resolution (~ 2–3%) (Fig. S3 of the Supplemental Material). Details of the growth procedure and characterizations were also described elsewhere22 (link),23 (link),28 (link).
We measured the ab-plane reflectivity spectra R(ω) in the photon energy region between 5 meV and 1 eV using a Fourier transform infrared spectrometer (VERTEX 70v, Bruker) with the in-situ gold overcoating technique52 (link). We employed spectroscopic ellipsometer (V-VASE and M-2000, J. A. Woollam Co.) to obtain the complex optical conductivity, σ ( ω) =  σ1(ω) + 2(ω), in the energy range from 0.74 to 5 eV. For the low-energy spectra below 5 meV, R(ω) was extrapolated by using the Hagen-Rubens relation24 . We carried out the Kramers–Kronig analysis of the R(ω) to obtain σ (ω).
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3

Thin Film Optical Characterization

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Variable angle spectroscopic ellipsometry (J. A. Woollam Co., Inc, V-VASE) was used to determine the thicknesses and optical constants of the Au, Pd, TiO2 and Al2O3 thin films. The reflection and transmission spectra as a function of excitation wavelengths were acquired using the same instrument with a wavelength spectroscopic resolution of 2 nm.
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4

Optical Characterization of Sr-La-Ir Oxides

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Single-crystals of (Sr1−xLax)3Ir2O7 (x = 0, 0.023 and 0.051) were grown via flux techniques. Dopant content was determined by energy-dispersive x-ray spectroscopy measurements. Details of the growth procedure were described elsewhere17 (link).
We measured the ab-plane reflectivity spectra R(ω) in the photon energy region between 5 meV and 1 eV using a Fourier transform infrared spectrometer (Bruker VERTEX 70 v). An in-situ gold overcoating technique48 (link) was used to compensate the effect of rough sample surfaces. The dielectric constants, ε = ε1 + 2, in the energy range from 0.74 to 5 eV were obtained by using spectroscopic ellipsometer (V-VASE, J. A. Woollam Co.). For the low-energy spectra below 5 meV, R(ω) was extrapolated by using the Hagen-Rubens relation24 . We transformed R(ω) to obtain the complex conductivity σ(ω) = σ1(ω) + 2(ω) through the Kramers-Kronig analysis.
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5

Spectroscopic Ellipsometry of Thin Films

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Variable-angle high-resolution spectroscopic ellipsometry (J.A. Woollam Co., Inc., V-VASE) was used to determine the thicknesses and optical constants of thin films. The ellipsometry parameters (ψ and Δ) and the polarized reflectivity spectra as a function of the excitation wavelength were acquired using the same instrument with a wavelength spectroscopic resolution of 1 nm. In the angular scan measurements, the angular resolution of the ellipsometer was set to 1°.
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6

Nanoscale Optical Characterization Protocol

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The transmission spectra of fabricated nanocavities were measured using the spectroscopic ellipsometer (J. A. Woollam Co., V-VASE). The light source is a xenon lamp with a broadband Visible to NIR spectrum. The diameter of the incident beam was set to be 400 μm. The beam sequentially passed through a monochromator, a polarizer, and it is used to expose the sample, and then it’s collected by a detector. The colour image was captured with simple optical set-up. The white lamp was used as light source and linear polarizer was placed between lamp and sample. The image was captured with commercial camera in mobile phone (Samsung Galaxy S3) with ×4 magnification. ISO was set to 100, auto-contrast was off, and the micro lens was attached to camera.
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7

Characterization of SOC Film After CMP

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The polishing rate of the SOC film was estimated by measuring the film thickness before and after the CMP using ellipsometry (V-VASE, J.A. Woollam Co., Inc., Lincoln, NE, USA). The secondary size and zeta potential of the zirconia abrasives in the CMP slurry and SOC film after CMP were analyzed using a particle analyzer (ELSZ2+, Otsuka Electronics Co., Inc., Osaka, Japan). The nano-scale (i.e., 81.1 nm in diameter) zirconia abrasives were observed using high-resolution transmission electron microscopy (HR-TEM, JEM-2010, JEOL Co., Inc., Tokyo, Japan) with an accelerating voltage of 200 kV. The surface roughness (average root mean square (RMS) roughness) of SOC film after polishing was estimated by atomic force microscopy (AFM, Park system, Suwon, Korea) with a 5 μm × 5 μm scan area. The contact angles were measured using a contact angle meter (GBX Instrument, DIGIDROP, Dublin, Ireland) by dropping 0.01 mL of DI water from the slurry on the SOC film surface after CMP. The chemical composition of the SOC film surface after CMP was characterized using XPS (X-ray photoelectron spectroscopy; K-Alpha+, Thermo Fisher Scientific Co., Inc., Waltham, MA, USA) at 12 keV and 6 mA with A1Kα (1486.6 eV).
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8

Spectroscopic Ellipsometry for Thin Film Analysis

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The film thicknesses and refractive indices were measured using spectroscopic ellipsometry (V-VASE® J.A. Woollam Co.). This analysis requires a flat surface, and was therefore conducted on films deposited on polished silicon wafers, which were put in the deposition chamber together with the copper substrates.
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9

Optical Characterization of HMM Absorber

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The optical characterisation of the HMM absorber is performed using variable angle spectroscopic ellipsometry (J. A. Woollam Co., Inc, V-VASE). The optical permittivity of the structure is measured in the wavelength range of 400–2400 nm with a spectroscopic resolution of 10 nm. The polarisation and the angle-dependent transmittance and reflectance of the HMM structures are measured with the incident angle varying from 20° to 80° at room temperature. The reflectance and transmittance spectra are recorded at an angular resolution of 5°. The reconfigurability response of the HMM structure was measured by a laser switching experiment. A home-built laser system consisting of a ns pulsed laser operating at 1064 nm, 10 ns pulse duration with a 30 Hz repetition rate was employed to switch the HMM devices.
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10

Spectroscopic Ellipsometry of La-doped BFO

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The spectroscopic ellipsometry measurements were performed using a commercially available rotating analyzer instrument with compensator (V-VASE; J.A. Woollam Co. Inc.) within the spectral range from 0.6 to 6.5 eV. Data were collected at two angles of incidence (50° and 70°), and the complex dielectric function was determined on a wavelength-by-wavelength basis using a three-layer model comprising surface roughness, the La-substituted BFO, and the STO substrate (49 ). The absorption coefficient was then calculated from the dielectric function.
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