Ultrathin 2D Bi2TeO5 nanoplates were synthesized on mica substrate by a home-made ambient pressure CVD system. The reaction process was conducted in a heating furnace (Thermo Scientific (HTF55322C)) equipped with a 1.2 m length, 2 inch outer diameter quartz tube. Bismuth oxide powder (Bi2O3, 99.999%, Sigma Aldrich) and tellurium powder (Te, 99.997%, Sigma Aldrich) were used as the precursors. 200 mg Bi2O3 powder was located in the hot zone of the tube furnace center. 1 g Te powder was placed 5 cm upstream while mica substrate (1 cm × 2 cm) 3 cm downstream from the hot center of the furnace for Bi2TeO5 deposition. In a typical process, the CVD system was purged with 300 standard cubic centimeters per minute (sccm) argon for 5 min. After that, the tube furnace was heated to 680 °C within 20 min and kept at 680 °C for 5 min. Last, the sample was cooled to ambient temperature under the protection of argon. 300 sccm Ar was maintained for the whole growth process.
Tellurium powder te
Manufactured by Merck Group
Tellurium powder (Te) is a high-purity, finely divided metallic element. It is a semiconductor material with a silvery-white appearance. Tellurium powder exhibits high thermal and electrical conductivity, and is commonly used in the production of various electronic and optoelectronic devices.
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Lab products found in correlation
Cadmium chloride hemi pentahydrate, by Merck Group (1 mentions)
Ammonium tetrathiomolybdate, by Merck Group (1 mentions)
Hydrazine hydrate n2h4, by Merck Group (1 mentions)
Pur a lyzer mega dialysis kit, by Merck Group (1 mentions)
Sodium borohydride nabh4, by Merck Group (1 mentions)
Cysteamine, by Merck Group (1 mentions)
Hydrochloric acid (hcl), by Merck Group (1 mentions)
Acetone, by Avantor (1 mentions)
Zinc chloride, by Merck Group (1 mentions)
Cadmium bromide tetrahydrate, by Merck Group (1 mentions)
Cadmium chloride hydrate, by Merck Group (1 mentions)
Myristic acid, by Merck Group (1 mentions)
Propionic acid, by Merck Group (1 mentions)
Toluene, by Avantor (1 mentions)
Ethanol, by Avantor (1 mentions)
Octadecene ode, by Merck Group (1 mentions)
N hexane, by Avantor (1 mentions)
Dodecanethiol ddt, by Merck Group (1 mentions)
Hgcl2, by Strem Chemicals (1 mentions)
Molybdenum mo powder, by Merck Group (1 mentions)
6 protocols using tellurium powder te
1
Ultrathin 2D Bi2TeO5 Nanoplates Synthesis
2
Synthesis of Tellurium Nanoparticles
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Ammonium tetrathiomolybdate (Sigma-Aldrich); hydrazine hydrate (N2H4, Merck); sodium borohydride (NaBH4, Merck); tellurium powder (Te, Sigma-Aldrich); cadmium chloride hemipentahydrate (CdCl2·2.5H2O); hydrochloric acid (HCl, Merck); cysteamine (Sigma-Aldrich), PUR-A-LYZER MEGA DIALYSIS KIT (Sigma-Aldrich); Milli-Q water.
3
Synthesis of Colloidal Semiconductor Nanocrystals
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Octadecene (ODE) (Sigma-Aldrich, 90%), Cadmium Acetate anhydrous (Cd(Ac) 2 ) (Sigma-Aldrich, 99.995%), Cadmium Oxide (CdO) (Strem 99.99%), Myristic Acid (Sigma-Aldrich 99%), Propionic Acid (Sigma-Aldrich 99%), Selenium powder (Se) (Strem chemicals 99.99%), Tellurium powder (Te) (Sigma-Aldrich 99.99%), Oleic Acid (OA) (Sigma-Aldrich 90%), Trioctylphosphine (TOP) (Cytec, Solvay), Tributylphsopine (TBP) (Cytec, Solvay), Cadmium Chloride hydrate (CdCl 2 .xH 2 0) (Sigma-Aldrich 99.995%), Cadmium Bromide tetrahydrate (CdBr 2 .4H 2 0) (Sigma-Aldrich 98%), Cadmium Iodide (CdI 2 ) (Sigma-Aldrich 99%), Zinc Chloride) (ZnCl 2 ) (Sigma-Aldrich 98%), Toluene (VWR 99.5%), n-Hexane (VWR 99%), Ethanol (VWR 96%), Acetone (VWR 99%).
4
Synthesis of Tellurium Nanoparticles
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Mercury chloride (HgCl2, Strem Chemicals, 99%), Mercury compounds are highly toxic. Handle them with special care. Tellurium powder (Te, Sigma-Aldrich, 99.99%), trioctylphosphine (TOP, Alfa, 90%), oleylamine (OLA, Acros, 80–90%), dodecanethiol (DDT, Sigma-Aldrich, 98%), methanol (VWR, 98.5%) acetone (VWR rectapur), ethanol (absolute VWR), toluene (VWR, 99.8%), hexane (VWR), dimethylformamide (DMF, VWR, 99.9%), mercaptoethanol (MpOH, Merck, >99%). All chemicals are used without any further purification.
5
Synthesis of 2H-MoTe2 Thin Films
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To grow semiconducting 2H molybdenum ditelluride (2H-MoTe2) thin films, 7-nm-thick Mo thin film was deposited on a 300-nm-thick SiO2/Si substrate via a sputtering system. The prepared Mo thin film was mounted in a two-zone CVD system. The Mo thin film located in the second furnace zone was tellurized by vaporizing 2 g of tellurium (Te) powder (Sigma-Aldrich) at the first furnace zone. To control the tellurization rate, the temperatures of the Te zone (T1) and Mo film zone (T2) were controlled independently. During the growth process, argon and hydrogen gases were flown with rates of 500 and 100 sccm, respectively. T1 was first heated up to 620 °C over 15 min and then T2 was ramped to 535 °C in 5 min. When the T2 temperature reached 535 °C, growth was carried out for 5 h. After growth, T1 was cooled rapidly by opening the chamber; T2 was then cooled to room temperature at a rate of 50 °C/min30 (link).
6
Growth and Fabrication of MoTe2 Single Crystals
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Growth of single crystals: Large, well-formed, ribbon-like single crystals of MoTe2 and Mo0.9W0.1Te2 alloy were grown by chemical vaper transport (CVT) with iodine (I) as the carrier gas. Stoichiometric amounts of tungsten (W) powder (99.9%, Sigma-Aldrich), molybdenum (Mo) powder (99.95%, Sigma-Aldrich) and tellurium (Te) powder (99.95%, Sigma-Aldrich) with a total weight of 500 mg, plus an extra 35 mg of I as the transport gas were sealed in an evacuated 20 cm long quartz tube under vacuum at 10 -6 Torr. The quartz tube was placed in a three-zone furnace. Firstly, the reaction zone was maintained at 850 °C for 30 h with the growth zone at 900 °C in order to prevent the transport of the product and a complete reaction; then the reaction zone was heated to 1070 °C and held for 7 days with the growth zone at 950 °C. Finally, the furnace was naturally cooled down to room temperature and the single crystals were collected in the growth zone. Residual I was cleaned using acetone before measurement.
Device fabrication: Devices were fabricated on exfoliated MoTe2 or Mo0.9W0.1Te2 flakes with thickness ranging from 100~300 nm and typical dimensions being 20 um ×20 um assembled on SiO2/Si substrates. Electrodes were defined by electron beam lithography followed by physical vapor deposition of 300 nm Ti/100 nm Au film.
Device fabrication: Devices were fabricated on exfoliated MoTe2 or Mo0.9W0.1Te2 flakes with thickness ranging from 100~300 nm and typical dimensions being 20 um ×20 um assembled on SiO2/Si substrates. Electrodes were defined by electron beam lithography followed by physical vapor deposition of 300 nm Ti/100 nm Au film.
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