Tecnai tf 20 feg tem
The Tecnai TF-20 FEG/TEM is a transmission electron microscope (TEM) that utilizes a field emission gun (FEG) as the electron source. The core function of this instrument is to provide high-resolution imaging and analysis of materials at the nanoscale level.
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9 protocols using tecnai tf 20 feg tem
Ultrastructural Analysis of Cells
Characterization of LM Nanocapsules
high-resolution TEM (EM-002B; Topcon, Tokyo, Japan) with an accelerating voltage
of 120 kV. A small droplet of sample placed on a grid or
10 μl of sample solution (LM concentration:
100 μg ml−1) were
irradiated using a fibre-coupled CW laser at 785 nm for
3 min (spot diameter, ∼4 mm; maximum power:
1 W,
∼80 mW mm−2;
BRM-785-1.0-100-0.22-SMA; B&W Tek, Newark, DE, USA). The polymer shell
structure of nanocapsules and STEM/EDS mapping were performed by Nanoscience Co.
in Evans Analytical Group Company, Inc. (Tokyo, Japan). The samples were imaged
with a FEI Tecnai TF-20 FEG/TEM operated at 200 kV in bright-field
TEM mode, high-resolution (HR) TEM mode, and high-angle annular dark-field
(HAADF) STEM mode. The STEM probe size was 1–2 nm nominal
diameter. EDS mapping were acquired on Oxford INCA, Bruker Quantax EDS
system.
The hydrodynamic diameter of LM nanocapsules was examined by DLS (Photal
FPAR-1,000; Otsuka Electronics, Osaka, Japan). DLS diagram of laser-induced LM
nanocapsules was also measured. A 100 μl of sample solution
(LM concentration:
100 μg ml−1) was
irradiated using a fibre-coupled CW laser (maximum power: 1 W,
∼80 mW mm−2) at
785 nm for 1 h before DLS measurements.
The concentration of LM and carmofur in nanocapsules was estimated with a
ultraviolet–visible–NIR spectrophotometer (V-730 BIO; Jasco,
Tokyo, Japan).
Cross-Sectional TEM Analysis of Indents
Structural Characterization of Nanomaterials
Cross-Sectional TEM Imaging of Indents
Nanoscale Characterization of Ferroelectric Thin Films
Transmission Electron Microscopy Analysis of Thin Films
microscopy (TEM) analysis was performed by the Evans Analytical Group
(Sunnyvale, CA) on the thick films of Al2O3 and
AlWxFy, deposited
on silicon wafers. Cross-sectional TEM samples were prepared using
the in situ focused ion beam (FIB) liftout technique on an FEI Strata
DualBeam FIB/scanning electron microscope. The samples were capped
with a protective layer of carbon prior to FIB milling and were imaged
with an FEI Tecnai TF-20 FEG/TEM operated at 200 kV.
TEM Characterization of FIB-Prepared Samples
Transmission Electron Microscopy Analysis
sent to EurofinsEAG for commercial TEM analysis. Images were collected
using bright field (BF) and dark field (DF) STEM, TEM, and high-resolution
(HR) TEM techniques using a FEI Tecnai TF-20 FEG/TEM operated at 200
kV, and energy dispersive X-ray spectroscopy (EDX) spectra were acquired
using an Oxford INCA, Bruker Quantax EDS system. Crystal structure
was measured by nanobeam diffraction. The TEM-based measurements of
the as-implanted sample were performed using a new Thermo FEI Talos
F200I TEM recently installed at the University of Surrey. Because
of installation time, measurements were performed 7–10 months
after the implants were carried out. EDX spectra were acquired using
a Bruker X-Flash system. EDX was used to map the location of Si and
Al in the samples displayed in this paper as false color images to
indicate the predominant element.
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