Transmission electron microscopy (TEM) images on ZTO were obtained using a JEM 2100F field emission transmission electron microscope. The chemical bonding states of the ZTO film were examined by X-ray photoelectron spectroscopy (XPS, JEOL JAMP-9500F) with a monochromatic Al Kα source. Electrical characteristics of the ZTO photoelectric transistor were measured using an Agilent 4156C semiconductor parameter analyzer. For the violet light illumination, 405 nm laser (SDL-405-LM-010T) was used as light sources during photo-electrical measurement and all measurements were performed in a dark box.
Jamp 9500f
The JAMP-9500F is a field emission scanning electron microscope (FESEM) manufactured by JEOL. It is designed to provide high-resolution imaging and analytical capabilities for a wide range of materials and applications. The JAMP-9500F utilizes a field emission electron source to generate a stable and high-brightness electron beam, enabling the observation of fine surface details and the analysis of nanoscale structures.
11 protocols using jamp 9500f
Fabrication and Characterization of ZTO Phototransistors
Transmission electron microscopy (TEM) images on ZTO were obtained using a JEM 2100F field emission transmission electron microscope. The chemical bonding states of the ZTO film were examined by X-ray photoelectron spectroscopy (XPS, JEOL JAMP-9500F) with a monochromatic Al Kα source. Electrical characteristics of the ZTO photoelectric transistor were measured using an Agilent 4156C semiconductor parameter analyzer. For the violet light illumination, 405 nm laser (SDL-405-LM-010T) was used as light sources during photo-electrical measurement and all measurements were performed in a dark box.
XPS Analysis of Coating Composition
SEM Imaging of Polymer Samples
charging of the polymeric samples, all surfaces were sputter-coated
with gold [60 s, JFC-1300 (JEOL)] prior to imaging. Scanning electron
microscopy (SEM) imaging was performed on a JAMP-9500F (JEOL) field
emission Auger microscope with a primary beam energy of 5.0 or 10.0
kV at 5000× and 10 000× magnification.
Auger Electron Spectroscopy for Surface Analysis
Cells incubated with HMDS and Infacol and cells cultured on PDMS dishes were compared to non-incubated cells as negative controls. Areas with around 20–200 cells were divided into fields of 256 × 256 pixels which were scanned in the narrow bands for gold (AuMNN, 2015 eV), silicon (SiLMM 92 eV), carbon (CKLL 263 eV) and nitrogen (NKLL 375 eV) with a dwell time of 100 ms per pixel. Narrow band signals were integrated and background subtracted in Spectra Inspection Software (JEOL). The resulting bitmaps were converted to binary images and diluted in ImageJ. Across every row of Fig.
Characterization of Functionalized Cu-O Surfaces
Characterization of Amorphous Tantalum Oxide Thin Films
and mass density of the a-TaOx thin films
were determined by X-ray reflectometry using an X-ray diffractometer
(ATX-G, Rigaku Co., Ltd.). Characterizations of the atomic structures
and film porosity were performed via transmission electron microscopy
on a JEM-ARM200F microscope (JEOL Co., Ltd.) for a-TaOx (200 nm)/SiO2/Si thin films patterned
by focused ion beam milling with an FB-2000A system (Hitachi). The
resistivity of a-TaOx was measured by
the DC four-point probe method (in the van der Pauw electrode configuration)
with a source measurement unit (Keithley 2450) for a-TaOx (50 nm)/glass (CORNINGEAGLE XG) thin films. The
chemical compositions of the a-TaOx (5.7
nm)/Nb:STO (001) thin films and Rh-coated C-AFM probes were analyzed
by X-ray photoelectron spectroscopy with a photoelectron spectrometer
(JEOL Co., Ltd., JPS-9200) and AES with an Auger electron spectrometer
equipped with a field-emission scanning electron microscope (JEOL
Co., Ltd., JAMP-9500F).
Auger-Meitner Electron Spectroscopy Microscopy
Auger Electron Spectrometry Surface Analysis
Characterization of Activated Carbon Fibers
An Ultim Max 100 EDX detector (Oxford Instruments, Abington, United Kingdom) coupled to a scanning Auger electron spectroscopy microscope (JAMP-9500F, JEOL Ltd., Akishima, Japan) was used to characterize structural and elemental properties of the samples. Energy-dispersive X-ray spectroscopy (EDX) measurements were performed at an acceleration voltage of 5 kV. The system was also used to take scanning electron microscopy (SEM) images.
SEM and Auger Analysis of Samples
Auger (AES) measurements were performed at room temperature with a JEOL Ltd. JAMP-9500F (Tokyo, Japan) field emission scanning Auger microprobe system. AES line profiles were acquired with a primary beam of 10 keV. The take-off angle of the instrument was 0°. For Auger elemental analysis, an 8 nm probe diameter was used. Elemental images were acquired with a primary beam of 10 keV. The take-off angle of the instrument was 0°.
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