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Jamp 9500f

Manufactured by JEOL
Sourced in Japan

The JAMP-9500F is a field emission scanning electron microscope (FESEM) manufactured by JEOL. It is designed to provide high-resolution imaging and analytical capabilities for a wide range of materials and applications. The JAMP-9500F utilizes a field emission electron source to generate a stable and high-brightness electron beam, enabling the observation of fine surface details and the analysis of nanoscale structures.

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11 protocols using jamp 9500f

1

Fabrication and Characterization of ZTO Phototransistors

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In this study, the ZTO precursor solution for the active layer was prepared by dissolving tin chloride and zinc acetate precursors (molar ratio of Zn : Sn = 1 : 1) in the solvent of 2-methoxyethanol. The ZTO solution was spin-coated onto the SiO2 (110 nm)/p+-Si substrate, followed by a heat treatment at 500 °C for 1 h. The p+-Si substrate serves as the gate electrode and SiO2 is the gate dielectric layer. After annealing, the ZTO thin film was patterned by photolithography. Finally, 300 nm-thick Al was deposited by e-beam evaporation using a shadow mask to define the source/drain electrodes. The channel width and channel lengths were 2000 μm and 100 μm, respectively.
Transmission electron microscopy (TEM) images on ZTO were obtained using a JEM 2100F field emission transmission electron microscope. The chemical bonding states of the ZTO film were examined by X-ray photoelectron spectroscopy (XPS, JEOL JAMP-9500F) with a monochromatic Al Kα source. Electrical characteristics of the ZTO photoelectric transistor were measured using an Agilent 4156C semiconductor parameter analyzer. For the violet light illumination, 405 nm laser (SDL-405-LM-010T) was used as light sources during photo-electrical measurement and all measurements were performed in a dark box.
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2

XPS Analysis of Coating Composition

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The composition of the coating layer was analyzed through X-ray photoelectron spectroscopy (XPS; JAMP-9500F, JEOL, Japan).
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3

SEM Imaging of Polymer Samples

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Because of excessive
charging of the polymeric samples, all surfaces were sputter-coated
with gold [60 s, JFC-1300 (JEOL)] prior to imaging. Scanning electron
microscopy (SEM) imaging was performed on a JAMP-9500F (JEOL) field
emission Auger microscope with a primary beam energy of 5.0 or 10.0
kV at 5000× and 10 000× magnification.
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4

Auger Electron Spectroscopy for Surface Analysis

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AES was performed using a JEOL JAMP-9500F field emission scanning Auger microprobe (JEOL Ltd., Tokyo, Japan). Briefly, this instrument probes chemical bonds by irradiating a surface locally with a focused electron beam, and measuring the energetic spectrum of electrons emitted through the Auger effect. These secondary electrons with relatively low energy primarily originate from a 2–3 nm layer at the surface. Scanning this beam with a small irradiation spot size allows the acquisition of hyperspectral images with a sub-micron spatial resolution. In conjunction, the instrument can be operated in scanning electron microscopy (SEM) mode, for comparing the morphological appearance of the sample.
Cells incubated with HMDS and Infacol and cells cultured on PDMS dishes were compared to non-incubated cells as negative controls. Areas with around 20–200 cells were divided into fields of 256 × 256 pixels which were scanned in the narrow bands for gold (AuMNN, 2015 eV), silicon (SiLMM 92 eV), carbon (CKLL 263 eV) and nitrogen (NKLL 375 eV) with a dwell time of 100 ms per pixel. Narrow band signals were integrated and background subtracted in Spectra Inspection Software (JEOL). The resulting bitmaps were converted to binary images and diluted in ImageJ. Across every row of Fig. 1c, the images were treated with the same threshold settings.
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5

Characterization of Functionalized Cu-O Surfaces

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Functionalized Cu–O surfaces were characterized by X-ray photoelectron spectroscopy (XPS) using a Jeol JAMP 9500F (Jeol Ltd., Tokyo, Japan) equipped with a non-monochromatic Al Kα X-ray source (energy 1486.6 eV, Specs GmbH, Berlin, Germany). Due to sample dimension limitations of the XPS, Si coupons of approximately 8 × 8 mm2 were coated with identical Cu–O thin films and functionalized alongside the Cu–O coated steel disks for equivalent ML formation and molecular coverage. Powder of the C18PA reactant pressed into an indium foil was analyzed as well. X-ray photoelectron spectra were recorded utilizing 20 eV pass energy of the detector, step sizes of 0.25 eV for a survey and 0.05 eV for detailed spectra with 5 and 20 recording cycles, respectively. The energy calibration of the hemispherical analyzer was performed by using Au 4f7/5 (83.98 eV), Ag 3d5/2 (368.26 eV), and Cu 2p3/2 (932.67 eV) signals. Charging was compensated by the adventitious C 1s signal (285.0 eV) [39 (link)]. Spectra analysis was carried out with the CasaXPS software (Version 2.3.19, Casa Software Ltd., Teignmouth, UK) applying mixed Gaussian–Lorentz signals and Shirley backgrounds for signal deconvolution as well as sensitivity factors determined by Wagner et al. [40 (link)] for surface chemistry calculations.
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6

Characterization of Amorphous Tantalum Oxide Thin Films

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The thickness
and mass density of the a-TaOx thin films
were determined by X-ray reflectometry using an X-ray diffractometer
(ATX-G, Rigaku Co., Ltd.). Characterizations of the atomic structures
and film porosity were performed via transmission electron microscopy
on a JEM-ARM200F microscope (JEOL Co., Ltd.) for a-TaOx (200 nm)/SiO2/Si thin films patterned
by focused ion beam milling with an FB-2000A system (Hitachi). The
resistivity of a-TaOx was measured by
the DC four-point probe method (in the van der Pauw electrode configuration)
with a source measurement unit (Keithley 2450) for a-TaOx (50 nm)/glass (CORNINGEAGLE XG) thin films. The
chemical compositions of the a-TaOx (5.7
nm)/Nb:STO (001) thin films and Rh-coated C-AFM probes were analyzed
by X-ray photoelectron spectroscopy with a photoelectron spectrometer
(JEOL Co., Ltd., JPS-9200) and AES with an Auger electron spectrometer
equipped with a field-emission scanning electron microscope (JEOL
Co., Ltd., JAMP-9500F).
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7

Auger-Meitner Electron Spectroscopy Microscopy

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The Auger–Meitner electron spectroscopy (AES) measurements were performed using a scanning AES microscope JAMP-9500 F (JEOL, JP) equipped with a hemispherical electron energy analyzer and a channeltron detector. The AES spectra were recorded with an acceleration voltage of 10 kV and an electron beam current of 20 nA, which resulted in a diameter of approximately 30 nm for the measurement spot.
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8

Auger Electron Spectrometry Surface Analysis

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An Auger electron spectrometer (JAMP-9500F, JEOL) was used to perform Auger electron spectrometry (AES) measurements and depth direction analysis of the sample surface. Measurement conditions were primary electron beam: 10 keV, 2.0 × 10−8 A; beam diameter: 30 m; sputtering conditions were Ar, 3.0 keV, 30 nm/min (SiO2 conversion).
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9

Characterization of Activated Carbon Fibers

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A volumetric sorption analyzer (Autosorb-iQ, Anton Paar QuantaTec Inc, Boynton Beach, FL, USA) was used to determine the specific surface area, pore size distribution, and total pore volume of the ACFs by N2 isothermal adsorption (77 K). The samples were degassed for 2 h at 350 °C. The non-local density functional theory (NLDFT) and the Brunauer–Emmett–Teller (BET) method were used to compute the pore size distribution (PSD) and the specific surface area SBET [22 (link),23 (link)]. At a relative pressure of 0.99, the total pore volume Vtot was estimated to be equal to the liquid volume of the adsorbate (N2).
An Ultim Max 100 EDX detector (Oxford Instruments, Abington, United Kingdom) coupled to a scanning Auger electron spectroscopy microscope (JAMP-9500F, JEOL Ltd., Akishima, Japan) was used to characterize structural and elemental properties of the samples. Energy-dispersive X-ray spectroscopy (EDX) measurements were performed at an acceleration voltage of 5 kV. The system was also used to take scanning electron microscopy (SEM) images.
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10

SEM and Auger Analysis of Samples

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SEM PSi cross sections were acquired soon after the samples preparation (to avoid surface oxidation and the need to coat the sample with conductive layer) on a Jeol JMS 7401F SEM (Tokyo, Japan) at either 5 kV or 10 kV of beam energy.
Auger (AES) measurements were performed at room temperature with a JEOL Ltd. JAMP-9500F (Tokyo, Japan) field emission scanning Auger microprobe system. AES line profiles were acquired with a primary beam of 10 keV. The take-off angle of the instrument was 0°. For Auger elemental analysis, an 8 nm probe diameter was used. Elemental images were acquired with a primary beam of 10 keV. The take-off angle of the instrument was 0°.
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