of the QDLEFET was done using a Keithley 4200-SCS semiconductor parameter
analyzer. Electroluminescence and photoluminescence spectra were collected
using a spectrometer and recorded by an Andor iDus 1.7 μm InGaAs
camera. The electroluminescence EQE was calculated using a calibrated
photodiode, put in contact with the back side of the substrate. Using
these data, the camera was calibrated to estimate the EQE of the electroluminescence
and photoluminescence at low temperature. For low-temperature measurements,
the substrate was placed in a He-cooled cryostat with spring-loaded
contact pins for reliable electrical connection. Channel imaging was
done by a cooled 2D InGaAs camera (640 × 512 pixels NIRvana 640ST,
Princeton Instruments), using a 50× objective.