Protocol detail

Surface Characterization of SiNW-FET Devices

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The surface of the SiNW-FET device was cleaned using the oxygen plasma cleaner (Harrick Plasma, New York, NY, USA) before the surface modification. Each n-type SiNW-FET device had two nanowires, and each nanowire had a length of 2 μm and a width of 200 nm [20 (link)], measurements that had been used in previous reports [20 (link),21 (link),22 (link),23 (link)]. The SiNW-FET measurements were carried out on the chip-on-board (COB) detection platform provided by Helios Bioelectronics, Inc. (Hsinchu County, Taiwan). Atomic force microscopy (AFM; SPA-400 DFM, Seiko, Japan) was utilized to analyze the surface roughness of the FET surface after each modification step. In addition, X-ray photoelectron spectroscopy (XPS; Thermo VG-Scientific, Loughborough, UK) was applied to identify the elemental composition and chemical state of the SiNW-FET surface.

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Hu W.P., Wu Y.M., Vu C.A, & Chen W.Y. (2023). Ultrasensitive Detection of Interleukin 6 by Using Silicon Nanowire Field-Effect Transistors. Sensors (Basel, Switzerland), 23(2), 625.

Publication 2023

oxygen plasma cleaner SPA-400 DFM

Atomic force microscopy Chip Device Oxygen Plasma

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Variable analysis

independent variables

Oxygen plasma cleaning
SiNW-FET device surface modification

dependent variables

Surface roughness of the FET surface
Elemental composition and chemical state of the SiNW-FET surface

control variables

Length of each nanowire (2 μm)
Width of each nanowire (200 nm)
Number of nanowires per SiNW-FET device (2)

controls

Positive control: Not specified
Negative control: Not specified

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