Fabrication of P(NDI2OD-T2) Organic Transistors

P(NDI2OD-T2) (purchased from Polyera) is dissolved in mesitylene at a concentration of 5 mg/ml. After fabrication of the bottom contacts via laser sintering, P(NDI2OD-T2) is deposited through bar-coating in air atmosphere, using the same process as described in ref. 2 (link). Then poly(methyl methacrylate) (PMMA) is spun from n-butylacetate (concentration 80 mg/ml) at 1500 rpm for 1 minute. After dielectric deposition, the devices are annealed on a hotplate for 30 min at 80 °C for residual solvent removal. PEDOT:PSS (Clevios P Jet 700) is patterned over the contacts and channel area via inkjet (using a Fujifilm Dimatix DMP-2831). The devices are then annealed at 120 °C in nitrogen atmosphere for 12 h.