Fabrication of High-Performance Organic Transistors

The diF-TES-ADT:PS_10K (4:1) and PDI8CN2:PS_280K (1:2) blend solutions
used in this work were prepared according to our previously published
protocol.^{15 (link),29 (link)} The S/D electrodes (Cr/Au, 5/40 nm), with a geometrical ratio W/L = 690 (channel width W = 20 700
μm and channel length L = 30 μm), were
deposited on Kapton polyimide film (75 μm thick, DuPont) by
a thermal evaporation system (Evaporation System Auto 306 from Boc
Edwards) at a pressure of 2 × 10^–4 Pa. Prior
to the deposition of the OSC:PS blend solution, the S/D substrates were cleaned in an ultrasonic bath
with acetone and isopropanol for 15 min each, followed by an ozone
treatment for 25 min. After that, the cleaned S/D electrodes were functionalized by PFBT through immersion
of the substrate into PFBT/isopropanol (2 μL:1 mL) solution
for 15 min and then rinsed with isopropanol. Finally, all of the OSC:PS
blend films were coated by the bar-assisted meniscus shearing (BAMS)
technique at a fixed speed of 1 cm·s^–1 and
a plate temperature of 105 °C in ambient conditions as previously
reported.^{15 (link)}